• Journal of Microbiology and Biotechnology
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• v.18 no.5
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• pp.837-844
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• 2008

Glucose (xylose) isomerases from Streptomyces sp. have been used for the production of high fructose corn syrup for industrial purposes. An 11-kb DNA fragment containing the xyl gene cluster was isolated from Streptomyces lividans TK24 and its nucleotide sequences were analyzed. It was found that the xyl gene cluster contained a putative transcriptional repressor (xylR), xylulokinase (xylB), and xylose isomerase (xylA) genes. The transcriptional directions of the xylB and xylA genes were divergent, which is consistent to those found in other streptomycetes. A gene encoding XylR was located downstream of the xylB gene in the same direction, and its mutant strain produced xylose isomerase regardless of xylose in the media. The enzyme expression level in the mutant was 4.6 times higher than that in the parent strain under xylose-induced condition. Even in the absence of xylose, the mutant strain produce over 60% of enzyme compared with the xylose-induced condition. Gel mobility shift assay showed that XylR was able to bind to the putative xyl promoter, and its binding was inhibited by the addition of xylose in vitro. This result suggested that XylR acts as a repressor in the S. lividans xylose operon.

• Proceedings of the Korea Contents Association Conference
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• 2008.05a
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• pp.38-42
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• 2008

In the 2000s, the PC package game market has withered, but the internet based on-line game, the wireless internet based mobile game and high-powered console game market have been main stream. Among those markets, mobile game market has rapidly increased because it has 'mobility' that overcomes the limitation of time and area. But, unlike other platforms, mobile game user have to pay the higher price for download mobile game contents through the wireless internet and mobile game developer have to overcome the limitation of storage memory capacity.of mobile phone. Chiefly, the image data consume the storage capacity of mobile game contents, this paper present a technology to optimize image data for mobile game contents through analyzing type of compression method and image formats.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.4
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• pp.1523-1531
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• 2011

Multi-axle driving vehicle are favored for military use in off road operations because of their high mobility on extreme terrains and obstacles. Especially, Military Vehicle needs an ability to driving on hills of 60% angle slope. This paper presents the improvement of the ability of hill climbing for 6WD/6WS vehicle through the optimal tire force distribution method. From the driver's commands, the desired longitudinal force, the desired lateral force, and the desired yaw moment were obtained for the hill climbing of vehicle using optimal tire force distribution method. These three values were distributed to each wheel as the torque based on optimal tire force distribution method using friction circle and cost function. To verify the performance of the proposed algorithm, the simulation is executed using TruckSim software. Two vehicles, the one the proposed algorithm is implemented and the another the tire's forces are equivalently distributed, are compared. At the hill slop, the ability to driving on hills is improved by using the optimum tire force distribution method.

• Journal of KIISE:Computer Systems and Theory
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• v.26 no.10
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• pp.1206-1216
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• 1999

이동 호스트란 시간과 공간의 제약 없이 필요한 기능을 수행하고, 또한 원하는 정보에 접근할 수 있는 휴대용 컴퓨터를 일컫는다. 이동 컴퓨팅 환경이란 이러한 이동 호스트들을 지원할 수 있도록 구성된 분산 환경이다. 따라서 이동 컴퓨팅 환경에서의 분산 알고리즘은 정적 호스트만을 고려한 기존의 분산 환경에서와는 다르게 이동 호스트의 여러 가지 특성들을 고려하여 제안되어야 한다. 즉, 이동 컴퓨팅 환경의 도래로 인하여 이동성과 휴대성, 그리고 무선 통신과 같은 특성들을 고려한 새로운 분산 상호 배제 알고리즘이 필요하다. 이제까지 이동 컴퓨팅 환경에서의 상호 배제 알고리즘은 토큰 링 구조에 기반을 두고 설계되었다. 토큰 링 구조는 이동 호스트들의 위치를 유지하기 위하여 높은 비용을 필요로 하는 단점을 가지고 있다. 본 논문에서는 균형 높이 트리(height-balanced tree)라는 새로운 모형을 제안함으로써 정적 분산 환경과 이동 분산 환경이 혼합된 환경에서 상호 배제 비용을 감소시킬 수 있는 새로운 알고리즘을 제안하며, 각 경우에 있어서의 비용을 산출하고 평가한다.Abstract The mobile host is a potable computer that carries out necessary functions and has the ability to access desirable informations without any constraints in time and space. Mobile computing environment is a distributed environment that is organized to support such mobile hosts. In that environment, distributed algorithms of which environment not only with static hosts but with mobile host's several properties should be proposed. With the emergence of mobile computing environments, a new distributed mutual exclusion method should be required to consider properties mobile computing system such as mobility, portability, and wireless communication. Until now, distributed mutual exclusion methods for mobile computing environments are designed based on a token ring structure, which have the drawbacks of requiring high costs in order to locate mobile hosts. In this paper, we propose a distributed mutual exclusion method that can reduce such costs by structuring the entire system as a height-balanced tree for static distributed networks and for networks with mobile hosts. We evaluated the operation costs in each case.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.2
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• pp.213-218
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• 2006

In this paper, we evaluate and compare performance between position-based and non-position-based routing protocols in a vehicular ad-hoc network. The protocols evaluated in this paper for many performance evaluation aspects are a position-based routing protocol, GPSR (Greedy Perimeter Stateless Routing), and the non-position-based such as AODV (Ad-hoc On-Demand Distance Vector) and DSR (Dynamic Source Routing) protocols. The three protocol characteristics such as Packet Delivery Ratio, Latency of first packet per connection, and Average number of hops depending on distance are compared and evaluated. As the result of simulation, the AODV performed better than the DSR. However, due to the high mobility characteristic of a vehicular ad-hoc network, GPSR, the position-based routing performs better than the non-position-based routing protocols such as AODV and DSR in a vehicular ad-hoc network environment.

• The KIPS Transactions:PartA
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• v.12A no.4 s.94
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• pp.273-280
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• 2005

The mobility or highly interconnected and communicating devices and users has implications for the QoS in a ubiquitous computing environment. Therefore, it is important for location aware systems to detect location of mobile object correctly and Provide high quality services in ubiquitous environment. However, it is not easy that location aware systems offer highly reliable QoS to users because process strategies of location aware systems are limited by the capability according to the applied detection target objects. In this paper, we design an autonomic architecture which analyzes the location aware system condition and autonomously chooses the best appropriate process strategy. We also have simulated the Proposed architecture in order to verify its performance. The test results show us that the architecture using self-optimizing mechanism provides higher QoS to users in variable bandwidth.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.4
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• pp.281-285
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• 2020

Oxide semiconductor devices have become increasingly important because of their high mobility and good uniformity. The channel length of oxide semiconductor thin film transistors (TFTs) also shrinks as the display resolution increases. It is well known that reducing the channel length of a TFT is detrimental to the current saturation because of drain-induced barrier lowering, as well as the movement of the pinch-off point. In an organic light-emitting diode (OLED), the lack of current saturation in the driving TFT creates a major problem in the control of OLED current. To obtain improved current saturation in short channels, we fabricated indium gallium zinc oxide (IGZO) TFTs with single gate and double gate structures, and evaluated the electrical characteristics of both devices. For the double gate structure, we connected the bottom gate electrode to the source electrode, so that the electric potential of the bottom gate was fixed to that of the source. We denote the double gate structure with the bottom gate fixed at the source potential as the BGFP (bottom gate with fixed potential) structure. For the BGFP TFT, the current saturation, as determined by the output characteristics, is better than that of the conventional single gate TFT. This is because the change in the source side potential barrier by the drain field has been suppressed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.99-100
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• 2006

Silicon-on-insulator(SOI) MOSFET with SiGe/Si heterostructure channel is an attractive device due to its potent use for relaxing several limits of CMOS scaling, as well as because of high electron and hole mobility and low power dissipation operation and compatibility with Si CMOS standard processing. SOI technology is known as a possible solution for the problems of premature drain breakdown, hot carrier effects, and threshold voltage roll-off issues in sub-deca nano-scale devices. For the forthcoming generations, the combination of SiGe heterostructures and SOI can be the optimum structure, so that we have developed SOI n-MOSFETs with SiGe/Si heterostructure channel grown by reduced pressure chemical vapor deposition. The SOI n-MOSFETs with a SiGe/Si heterostructure are presented and their DC characteristics are discussed in terms of device structure and fabrication technology.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.473-479
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• 2011

In this paper, we have compared amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) with the nano-crystalline embedded-IGZO ($N_c$-embedded-IGZO) TFT fabricated by solid-phase crystallization (SPC) technique. The field effect mobility (${\mu}_{FE}$) of $N_c$-embedded-IGZO TFT was 2.37 $cm^2/Vs$ and the subthreshold slope (S-factor) was 0.83 V/decade, which showed lower performance than those of a-IGZO TFT (${\mu}_{FE}$ of a-IGZO was 9.67 $cm^2/Vs$ and S-factor was 0.19 V/decade). This results originated from generation of oxygen vacancies in oxide semiconductor and interface between gate insulator and semiconductor due to high temperature annealing process. However, the threshold voltage shift (${\Delta}V_{TH}$) of $N_c$-embedded-IGZO TFT was 0.5 V, which showed 1 V less shift than that of a-IGZO TFT under constant current stress during $10^5$ s. This was because there were additionally less increase of interface trap charges in Nc-embedded-IGZO TFT than a-IGZO TFT.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.814-820
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• 2009

Antimony (Sb) doped ZnO thin films (0.1 at.%) were deposited on sapphire (0001) substrates at various temperatures (200 - 600$^{\circ}C$) by using pulsed laser deposition technique. All the thin films have been characterized by X-ray diffractometer, atomic force microscopy and spectrophotometer to investigate their structural, morphological and optical properties, respectively. Hall measurements were also carried out to identify the electrical properties of the thin films. These thin films were constituted in wurtzite structure with the preferential orientation of (002) diffraction plane and had as high as 80% optical transmission in the visible range. The bandgap energy also was determined by spectrophotometer which was around 3.28 eV. Hall measurements results revealed that the Sb dope ZnO thin film (0.1 at.%) grown at $500^{\circ}C$ exhibited p-type conduction with a carrier concentration of $8.633\times10^{16}\;cm^{-3}$, a mobility of $1.41\;cm^2/V{\cdot}s$ and a resistivity of $51.8\;\Omega{\cdot}cm$. We have successfully achieved p-type conduction in antimony doped ZnO thin films with low doping level even though the electrical properties are not favorable. This paper suggests the feasibility of p-type doping with large-size-mismatched dopant by using pulsed laser deposition.