• Proceedings of the IEEK Conference
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• 2002.06a
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• pp.167-170
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• 2002

The design and fabrication of Q-band 3-stage monolithic microwave integrated circuit(MMIC) driver and power amplifiers for WLAN are presented using 0.2${\mu}{\textrm}{m}$ AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor(PHEMT). In each stage of the MMIC DA, a negative feedback is used for both broadband and good stability. The MMIC PA has employed a balanced configuration to overcome these difficulties and achieve high power with low VSWR over a wide frequency range. In the MMIC DA, the measurement results arc achieved as an input return loss under -4dB, an output return loss under -l0dB, a gain of 14dB, and a PldB of 17dB at C-band(36~ 44GHz). The chip size is 28mm$\times$1.3mm. The developed MMIC PA has the l0dB linear gain over 360Hz to 420Hz band and 22dBm PldB performance at 400Hz. The size of fabricated MMIC PA is 4mm x3mm. These results closely match with design results. This MMIC DA Sl PA will be used as the unit cells to develop millimeter-wave transmitters for use in wideband wireless LAN systems.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.6
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• pp.1-8
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• 2012

This paper presents a fully-integrated buck converter equipped with packaging inductors. These inductors include parasitic inductances of the bonding wires and lead frames in the package. They have significantly better Q factors than the best on-chip inductors implemented on silicon. This paper also proposes a low-swing gate driver for efficient regulation of high-frequency switching converters. The low-swing driver uses the voltage drop of a diode-connect transistor. The proposed converter is designed and fabricated using a $0.13-{\mu}m$ CMOS process. The fully-integrated buck converter achieves 68.7% and 86.6% efficiency for 3.3 V/2.0 V and 2.8 V/2.3 V conversions, respectively.

• The Journal of the Acoustical Society of Korea
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• v.37 no.4
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• pp.242-247
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• 2018

The automotive industry is making various efforts to cope with ever-increasing exhaust emissions and fuel economy regulations. However, this often results in degraded NVH (Noise, Vibration, and Harshness) performance. For example, we proposed the causes and improvements for the noise generated by the high-pressure pump noise of a gasoline engine, the change of acceleration noise due to dual injection of MPI (Multi-Point Injection) and GDI (Gasoline Direct Injection), the noise of a gasoline turbocharger, and the combustion noise deteriorated due to the injection parameters calibration in a diesel engine. Since these noises are caused by the high frequency noise, and the driver feels the rough sound quality, efforts to reduce them with proper NVH measures are indispensable.

• Journal of Power Electronics
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• v.18 no.1
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• pp.23-33
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• 2018

Silicon Carbide (SiC) MOSFET belongs to the family of wide-band gap devices with inherit property of low switching and conduction losses. The stable operation of SiC MOSFET at higher operating temperatures has invoked the interest of researchers in terms of its application to high power density (HPD) power converters. This paper presents a performance study of SiC MOSFET based two-phase interleaved boost converter (IBC) for regulation of avionics bus voltage in more electric aircraft (MEA). A 450W HPD, IBC has been developed for study, which delivers 28V output voltage when supplied by 24V battery. A gate driver design for SiC MOSFET is presented which ensures the operation of converter at 250kHz switching frequency, reduces the miller current and gate signal ringing. The peak current mode control (PCMC) has been employed for load voltage regulation. The efficiency of SiC MOSFET based IBC converter is compared against Si counterpart. Experimentally obtained efficiency results are presented to show that SiC MOSFET is the device of choice under a heavy load and high switching frequency operation.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.583-585
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• 2012

In this paper, we introduce a design method for a broadband planar quasi-Yagi antenna (QYA) for terrestrial digital television (DTV) receiving. The coplanar strip line feeding the driver dipole is connected to a microstrip line and is terminated by short circuit. By appending a wide strip-type director at a location close to the driver dipole, a broadband impedance matching and a gain characteristics in a high frequency region are obtained. The gain characteristics in a low frequency region are improved by adding a reflector formed by a truncated ground plane. To reduce the antenna size, the strip-type dipole and reflector are modified to half bowtie (V)-shaped elements. The effects of various parameters on the antenna characteristics are examined. An antenna, as an design example for the proposed antenna, is designed for the operation in the frequency band of 470-806 MHz for terrestrial DTV. The optimized antenna is fabricated on an FR4 substrate and tested experimentally to verify the results of this study.

• Proceedings of the KIPE Conference
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• 2005.07a
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• pp.106-108
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• 2005

High accuracy and stability digital controlled power supply for magnet is developed at PLS. This power supply has three sections. The first section is digital controller including DSP&FPGA and precision ADC, the second section consists of IGBT driver and four quad IGBT switch, and the third section is LC output filter section. AC input voltage of power supply is 3-phase 21V, output current is 0 ${\sim}$ 150 A dc. Switching frequency of four quad IGBT switch is 25 kHz. The output current of power supply has very high accuracy of 100 A step resolution at full range and the stability of +/- 1.5 ppm for short term and +/- 5 ppm for long term. This paper describes characteristics of filter and output current performance improvement after LC output filter at four quad digital power supplies.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.19 no.4
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• pp.71-78
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• 2005

This paper proposes a novel multi-level energy recovery sustaining driver for AC PDP(Plasma Display Panel), which solves the problems of the conventional multi-level sustaining driver. While the conventional circuit improves the voltage md current stress of the switching elements in Weber circuit not only there are parasitic resonant currents between resonant inductors and parasitic capacitance and hard switching, but also the changing period between 0 and sustain voltage is too long. Comparing the proposed circuit with the conventional circuit, the number of components are reduced and the parasitic resonant currents in resonant inductors are eliminated Moreover the hard switching problem is solved by using CIM(Current Injection Method) and the operating frequency will be high as much as possible by removing Vs/2 sustain period. And the circuit operations of the proposed circuit are analyzed for each mode and the validity is verified by the simulations using PSpice program.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.40 no.7
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• pp.1347-1353
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• 2015

We implemented a 10 Gb/s 4-channel vertical cavity surface emission lasers (VCSEL) driver array in a $0.13{\mu}m$ CMOS process technology. To enhance high current resolution, power dissipation, and chip space area, digital APC/AMC with time division sensing technology is primarily adopted. The measured -3 dB frequency bandwidth is 9.2 GHz; the small signal gain is 10.5 dB; the current resolution is 0.01 mA/step, suitable for the wavelength operation up to 10 Gb/s over a wide temperature range. The proposed APC and AMC demonstrate 5 to 20 mA of bias current control and 5 to 20 mA of modulation current control. The whole chip consumes 371 mW of low power under the maximum modulation and bias currents. The active chip size is $3.71{\times}1.3mm^2$.

• Journal of KSNVE
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• v.7 no.2
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• pp.247-254
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• 1997

In the case of a precision equipment, it requires a vibration free environment to provide its proper function. Especially, lithography and inspection devices, which have sub-nanometer class high accuracy and resolution, have come to necessity for producing more improved giga class semiconductor wafers. This high technology equipments require very strict environmental vibration standard in proportion to the accuracy of the manufacturing, inspecting devices. The vibration criteria are usually obtained either by the real vibration exciting test on the equipment or by the analytical calculation. This paper proposes a new method to solve this problem at a time. The permissible vibration level to a precision equipment can be easily obtained by analyzing a process of Frequency Response Function. This paper also demonstrates its effectiveness by applying the proposed method to finding the vibration criteria of a Computer Hard Disk Driver by Impact Test.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.553-554
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• 2006

In this paper, 77 GHz CPW power amplifier MMIC, which are consisted of a 2 stage driver stage and a power stage employing $8{\times}50um$ gate width, have been successfully developed by using 120nm $In_{0.4}AlAs/In_{0.35}GaAs$ Metamorphic high electron mobility transistors (MHEMTs). The devices show an extrinsic transconductance $g_m$ of 660 mS/mm, a maximum drain current of 700 mA/mm, and a gate drain breakdown voltage of -8.5 V. A cut-off frequency ($f_T$) of 172 GHz and a maximum oscillation frequency ($f_{max}$) of over 300 GHz are achieved. The fabricated PA exhibited high power gain of 20dB only with 3 stages. The output power is measured to be 12.5 dBm.