• Journal of Magnetics
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• v.20 no.3
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• pp.211-214
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• 2015

$Cr_2O_3$ nanoparticles were prepared via one-step reactive laser ablation of Cr in oxygen. The metastable $CrO_2$ phase was obtained through the subsequent oxidation of $Cr_2O_3$ nanoparticles under $O_2$ with gas pressures of up to 40 MPa. The as-prepared $Cr_2O_3$ nanoparticles are spherical or rectangular in shape with sizes ranging from 20 nm to 50 nm. High oxygen pressure annealing is effective in producing meta-stable $CrO_2$ from as-dried $Cr_2O_3$ nanoparticles, and the $Cr_2O_3$ nanoparticles exhibit a weak ferromagnetic behavior with an exchange bias of up to 11 mT that can be ascribed to the interfacial exchange coupling between uncompensated surface spins and the antiferromagnetic core. The $Cr_2O_3/CrO_2$ nanoparticles exhibit an enhanced saturation magnetization and a reduced exchange bias with an increasing faction of $CrO_2$ due to the elimination of uncompensated surface spins over the $Cr_2O_3$ nanoparticles when exposed to a high pressure of $O_2$ and/or possible phase segregation that results in a smaller grain size for both $Cr_2O_3$ and $CrO_2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.12
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• pp.806-811
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• 2017

An all-transparent ultraviolet (UV) photodetector was fabricated by structuring $p-NiO/n-SnO_2/ITO$ on a glass substrate. $SnO_2$ is an important semiconductor material because of its large bandgap, high electron mobility, high transmittance (as high as 80% in the visible range), and high stability under UV light. For these reasons, $SnO_2$ is suitable for a range of applications that involve UV light. In order to form a highly transparent p-n junction for UV detection, $SnO_2$ was deposited onto a device containing NiO as a high-transparent metal conductive oxide for UV detection. We demonstrated that all-transparent UV photodetectors based on $SnO_2$ could provide a definitive photocurrent density of $4nA\;cm^{-2}$ at 0 V under UV light (365 nm) and a low saturation current density of $2.02nA{\times}cm^{-2}$. The device under UV light displayed fast photoresponse with times of 31.69 ms (rise-time) and 35.12 ms (fall-time) and a remarkable photoresponse ratio of 69.37. We analyzed the optical and electrical properties of the $NiO/SnO_2$ device. We demonstrated that the excellent properties of $SnO_2$ are valuable in transparent photoelectric device applications, which can suggest various routes for improving the performance of such devices.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.265-270
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• 2017

4H-SiC has attracted attention for high-power and high-temperature metal-oxide-semiconductor field-effect transistors (MOSFETs) for industrial and automotive applications. The gate oxide in the 4H-SiC MOS system is important for switching operations. Above $1000^{\circ}C$, thermal oxidation initiates $SiO_2$ layer formation on SiC; this is one advantage of 4H-SiC compared with other wide band-gap materials. However, if post-deposition annealing is not applied, thermally grown $SiO_2$ on 4H-SiC is limited by high oxide charges due to carbon clusters at the $SiC/SiO_2$ interface and near-interface states in $SiO_2$; this can be resolved via low-temperature deposition. In this study, low-temperature $SiO_2$ deposition on a Si substrate was optimized for $SiO_2/4H-SiC$ MOS capacitor fabrication; oxide formation proceeded without the need for post-deposition annealing. The $SiO_2/4H-SiC$ MOS capacitor samples demonstrated stable capacitance-voltage (C-V) characteristics, low voltage hysteresis, and a high breakdown field. Optimization of the treatment process is expected to further decrease the effective oxide charge density.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.04a
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• pp.43-43
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• 2006

• Korean Journal of Plant Resources
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• v.20 no.1
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• pp.12-21
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• 2007

Ginsengs (1,2 3 years) from the Keumsan are analysed for the inorganic compounds and compared with the their soils from the granite, phyllite and shale areas. In the soils, the granite areas show high $Al_2O_3\;and\;Na_2O$ contents while the phyllite areas have high $Fe_2O_3,\;MnO\;and\;MgO$ contents. Positive correlations are shown in the $Al_2O_3-K_2O\;and\;Fe_2O_3-MgO$ pairs while negative correlations are shown in the $SiO_2-CaO$ pair. In the ginsengs, the shale areas are high in the most of the elements, but low in the granite areas. Compared with same soils of different ages, Al, Na and Ti contents of the ginsengs are high in the all areas. The shale areas are mainly high in the upper parts while the granite areas are mainly high in the root parts. Regardless of the localities, Fe, Mn and Ca contents are high in the upper parts while Ti contents are high in the root parts with differences of several times. Relative ratios between field soils and ginsengs (field soil/ginseng) suggest that the ginsengs show high Ca contents with differences of several ten times whereas the soils have high Na, Fe, Ti and Al contents with differences of several times. Regardless of the localities, the ratios of the Al, Mn and Na are high in the 2 year relative to the 3 year. Overall ratios between field soils and ginsengs are mainly big in the 2 year area relative to the 3 year area. It suggests that contents of the 3 year ginsengs are more similar to those of their soils relative to the 2 year and the ginsengs may absorpt eligible element contents with increasing ages.

• Journal of the Korean Society for Heat Treatment
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• v.14 no.3
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• pp.151-154
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• 2001

$TiO_2$ thin film has wide application because of its high capacitanca, reflection, and good transmissivity in visible range. $TiO_2$ thin film can be made by thermal deposition method, reactive evaporation method, activated reactive evaporation(ARE) method. In the case of thermal deposition, the oxygen deficiency can occur because the melting point of Ti is very high. While in the case of reactive evaporation, high density $TiO_2$ can not be made, because reactive gas($O_2$) and evaporated material(Ti) are not fully combined, activated reactive evaporation, $TiO_2$ is easily deposited at lower gas pressure compared with reactive evaporation because the ionized reactive gas is made by plasma. Therefore, activated reactive evaporation is very useful to deposit the material having the high melting point. In this work, we formed $TiO_2$ thin film by activated reactive evaporation method. The surface of $TiO_2$ thin film was analyzed by X-ray photoelectron spectroscopy. The surface morphology which was analyzed by atomic force microscopy(AFM) shows that feature of the film surface is uniform. The dielectric capacitance, withstanding voltage were $600{\mu}F/cm^2$, 0.4V respectively. In further work, we can increase the withstanding voltage by improving the deposition parameter of substrates.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.104-108
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• 2016

To research the correlation between oxygen vacancy and the electrical characteristics of ZTO, which is made by using a target mixed ZnO:SnO₂=1:1, the ZnO, SnO₂ and ZTO were analyzed by PL, XPS, XRD patterns and electrical properties. It was compared with the electron orbital spectra of O 1s in accordance with the electrical characteristics of ZnO, SnO₂ and ZTO. The electrical characteristics of ZTO were improved by increasing the annealing temperatures, due to the high degree of crystal structures at a high temperature, and the physical properties of ZTO was similar to that of ZnO. The amorphous structure of SnO₂ was increased with increasing the temperature. The Schottky contact of oxide semiconductors was formed using the depletion region, which is increased by the electron-hole combination due to the annealing processes. ZnO showed the Ohmic contact in spite of a high annealing temperature, but SnO₂ and ZTO had Schottky contact. As such, it was confirmed that the electrical properties of ZTO are affected by the molecules of SnO₂.

• Journal of the Korean Ceramic Society
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• v.15 no.2
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• pp.72-78
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• 1978

The vapor pressure of the high melting point oxides, MgO, $Cr_2O_3$, and $MgCr_2O_4$ were measured over the temperature range 1300 to 175$0^{\circ}C$ under vacuum <$10^{-5}$ torr by the Langmuir and the Knudsen method. The Langmuir vapor pressure was increased with elevating temperature and with increasing porosity of the specimen. The difference between the vapor preseures measured by the Langmuir and the Knudsen method was decreased with elevating temperature and the Langmuir vapor pressure finally reached the Knudsen vapor pressure at the melting point when extrapolated. The vapor pressure of other important oxides with high melting points, i.e., $Al_2O_3$, $ThO_2$, $Yb_2O_3$ and $Y_2O_3$ were cited from the references. The Langmuir and the Knudsen vapor pressure of these oxides also showed the same results, i.e., they showed the same value at their melting points.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.114-114
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• 2012

Metal-oxide-semiconductor field-effect transistors (MOSFETs)의 critical dimension (CD)가 sub 45 nm로 줄어듬에 따라 기존에 gate dielectric으로 사용하고 있는 SiO2에서 발생되는 high gate leakage current 때문에 새로운 high dielectric constant (k) 물질들이 연구되기 시작하였다. 여러 가지 high-k 물질 중에서, aluminum-oxide (Al2O3)는 높은 dielectric constant (~10)와 전자 터널링 barrier height (~2eV) 등을 가지기 때문에 많은 연구가 되고 있다. 그러나 Al2O3를 anisotropic한 patterning을 하기 위해 주로 사용되고 있는 halogen-based 플라즈마 식각 과정에서 나타나는 Al2O3와 하부 layer간의 낮은 식각 selectivity 뿐만 아니라 표면에 발생되는 defect, stoichiometry modification, roughness 변화 등의 많은 문제점들로 인하여 device performance가 감소하기 때문에 이를 해결하기 위한 많은 연구들이 진행중이다. 따라서 본 연구에서는 실리콘 기판위의 atomic layer deposition (ALD)로 증착된 Al2O3를 BCl3/Ar 중성빔을 이용하여 원자층 식각한 후 식각 특성을 분석해 보았다. Al2O3 표면을 BCl3로 absorption시킨 후 Ar 중성빔으로 desorption 시키는 과정에서 volatile한 aluminum-chlorides와 boron oxychloride가 형성되어 layer by layer로 제거됨을 관찰 할 수 있었다.

• Korean Journal of Materials Research
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• v.24 no.2
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• pp.67-72
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• 2014

Nanocrystalline materials have received much attention as advanced engineering materials with improved physical and mechanical properties, including high strength, high hardness, excellent ductility and toughness. In this study, nanopowders of $Al_2O_3$, MgO and $TiO_2$ were prepared as starting materials by high energy ball milling for the simultaneous synthesis and sintering of the nanostructured compound $Mg_4Al_2Ti_9O_{25}$ by high-frequency induction heating process. The highly dense nanostructured $Mg_4Al_2Ti_9O_{25}$ compound was produced within one minute by the simultaneous application of 80MPa pressure and induced current. The sintering behavior, grain size and mechanical properties of the $Mg_4Al_2Ti_9O_{25}$ compound were evaluated.