• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.482-483
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• 2007

For measurement of dielectric constants, the commercial parallel plate electrodes system with guard-ring electrode have been widely used up to now. The capacitance derived from the parallel plate electrodes capacitor with guard-ring electrode is calculated by the equation of ($C={\epsilon}\;{\cdot}\;\frac{area\;of\;electrod}{distance\;between\;electrodes}$). Therefore, in parallel plate electrode capacitor, the diameter of the guarded electrode, the gap size between guarded electrode and guard ring, and distance between two active electrode should be measured precisely to calculate dielectric constants from the measured capacitance. Consequently their mechanical measurement uncertainties are directly contributed. Especially the air-gap between the electrodes and dielectric specimen at the system must be existed and the measurement error derived from the air-gap is impossible to evaluate as measurement uncertainties. In this study, we analyze the uncertainty of the commercial dielectric constant test cell using 3 kinds CRMs.

• ETRI Journal
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• v.25 no.3
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• pp.195-202
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• 2003

This paper proposes a new LDMOSFET structure with a trenched sinker for high-power RF amplifiers. Using a low-temperature, deep-trench technology, we succeeded in drastically shrinking the sinker area to one-third the size of the conventional diffusion-type structure. The RF performance of the proposed device with a channel width of 5 mm showed a small signal gain of 16.5 dB and a maximum peak power of 32 dBm with a power-added efficiency of 25% at 2 GHz. Furthermore, the trench sinker, which was applied to the guard ring to suppress coupling between inductors, showed an excellent blocking performance below -40 dB at a frequency of up to 20 GHz. These results confirm that the proposed trenched sinker should be an effective technology both as a compact sinker for RF power devices and as a guard ring against coupling.

• Journal of Radiation Protection and Research
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• v.28 no.2
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• pp.87-95
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• 2003

The fabrication process and the structure of PIN semiconductor detectors have been designed optimally by simulation for doping concentration and width of p+ layer, impurities re-contribution due to annealing and the current distribution due to guard ring at the sliced edges. The characteristics to radiation response has been also simulated in terms of Monte Carlo Method. The device has been fabricated on n type, $400\;{\Omega}cm$, orientation <100>, Floating-Zone silicon wafer using the simulation results. The leakage current density of $0.7nA/cm^2/100{\mu}m$ is achieved by this process. The good linearity of radiation response to Cs-137 was kept within the exposure ranges between 5 mR/h and 25 R/h. This proposed process could be applied for fabricating a PIN semiconductor detector for measuring individual dose.

• Journal of the Korean Institute of Telematics and Electronics
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• v.20 no.3
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• pp.33-39
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• 1983

New Schottky devices with thin stepped oxide layer (about 1000 ${\AA}$) along the edge of metal-semiconductor junction have been designed and fabricated. The breakdown voltages of these diodes have been compared with those of conventional metal overlap and P guard ring Schottky diode structures. Thin stepped oxide layer has been grown by the process of T.C.E. oxidation. In order to compare and demonstrate the improved down phenomena of these devices, conventional metal overlap diode and P guard ring which have the same dimension with new devices have also been integrated in a same New Schottty devices structured with thin stepped oxide layer have shown significant improvement in breakdown phenomena compared with conventional diodes.

• Journal of Navigation and Port Research
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• v.31 no.5 s.121
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• pp.333-338
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• 2007

In this paper, we have studied the ship collision avoidance support on the basis of 'Ship Collision Avoidance Model considered a Speed' for the purpose of the decrease of the human error, caused ship collisions, at sea and the effective support of avoiding ship collisions. The program has been reflected the speed of a target ship, had not been considered in a preceding study. Besides, the program will effectively support a maneuver for a collision avoidance, through the display of a feasible area and the method of a collision avoidance using the own ship's turning characteristic about the action of target ship's course and velocity.

• Journal of Plant Biology
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• v.38 no.2
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• pp.181-193
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• 1995

Cuticle micromorphology of four families of Korean gymnosperms, Cycadaceae, Ginkgoaceae, Taxaceae, and Cephalotaxaceae, were studied with scanning electron microscopy. The outer and inner features of abaxial and adaxial cuticles were described in details; the absent or present of Florin ring, orifice, trichome, and plug and their shape, the shape and periclinal and anticlinal wall sculpture of epidermal cells, the shape of cuticular flange of epidermal cell, guard cell, and subsidiary cell, the number of stomatal bands and rows, and stomatal apparatus including the shape of polar extension, number of subsidiary cells, the sculpture of guard cell and subsidiary cell. Most of these features have not been sufficiently substantiated by the previous reprots. Furthermore, all the species investigated showed distinctive cuticle morphology with morphological and taxonomical informations.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.1
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• pp.1-4
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• 2001

We have fabricated and evaluated a new Si pin photodetector for APF optical link. The fabricated device has the $p^{+}$-guard ring around the metal-semiconductor contact and the web patterned $p^{+}$-shallow diffused region in the light absorbing area. From the measurements of electo-optical characteristics under the bias of -5 V, the junction capacitance of 4 pF and the dark current of 180 pA were obtained. The optical signal current of 1.22 $\mu$A and the responsivity of 0.55 A/W were obtained when the 2.2 $\mu$W optical power with peak wavelength of 670 nm was incident on the device. The fabricated device showed the maximum spectral response in a spectrum of 650-700 nm. It is expected that the fabricated device can be very useful for detecting the optical signal in the application of red light optics.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.7
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• pp.1281-1286
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• 2006

We have used the silicon-carbide(4H-SiC) instead of conventional silicon materials to develope of the planar junction barrier schottky rectifier for ultra high breakdown voltage(1,200 V grade). The substrate size is 2 inch wafer, Its concentration is $3*10^{18}/cm^{3}$ of $n^{+}-$type, thickness of epitaxial layer $12{\mu}m$ conentration is $5*10^{15}cm^{-3}$ of n-type. The fabticated devices are junction barrier schottky rectifier, The guard ring for improvement of breakdown voltage is designed by the box-like impurity of boron, the width and space of guard ring was designed by variation. The contact metals to rectify were used by the $Ni(3,000\:{\AA})/Au(2,000\:{\AA})$. As a results, the on-state voltage is 1.26 V, on-state resistance is $45m{\Omega}/cm^{3}$, maximum value of improved reverse breakdown voltage is 1180V, reverse leakage current density is $2.26*10^{-5}A/CM^{3}$. We had improved the measureme nt results of the electrical parameters.

• Journal of IKEEE
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• v.25 no.4
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• pp.721-727
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• 2021

This paper proposes a UWB (Ultar-wideband) impulse generator using the gated ring oscillator. The oscillator and PLL circuits which generate a several GHz LO signal for the conventional architecture are replaced with the gated ring oscillator. Therefore, the system complexity is decreased. The proposed architecture controls the duty of enable signal, which is used for the head switch of ring oscillator. The control of the duty enables to tun off the oscillator during the guard interval and stop wasting the power consumption. The pulse shaping method using the counter makes the small side lobe and preserves the bandwidth regardless of the change on the center frequency. Designed UWB impulse generator could change the center frequency from 6.0 GHz to 8.8 GHz with a digital bit control, while it preserves the bandwidth as about 1.5 GHz.

• The Research Journal of the Costume Culture
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• v.31 no.5
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• pp.692-704
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• 2023

This study analyzed 214 sports knee braces found on Chinese websites between October 2022 and November 2022 to assess product type (impact protection material, fastening method, and protection method), material composition, size, weight, and main characteristics. The product type was further categorized according to (1) use of hard guard and soft guard protection method; (2) cover type, strap type, and slip-on type fastening method; and (3) pressure type and support type protection method. It also noted the physical shock protection materials used, including foam (EVA or polyurethane) attached to joints as a buffer material and plastic (TPU or PP) that protects the user's knee from external impacts. The study found that the materials that primarily comprise sports knee braces are a combination of nylon, polyester, and neoprene. Additionally, it found that most sports knee braces available on the market are available in three sizes based on knee circumference: M (35-38cm), L (38-41cm), and XL (41-44cm), while some products are available in one size only. Furthermore, the majority of the 214 products studied weighed 200g, followed by 1,000g. Finally, in terms of product characteristics, many sports knee braces utilize ring-shaped silicone pads to distribute the load pressure on the knees or incorporate sturdy adhesive velcro to improve knee stability.