• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.490-490
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• 2011

Graphene, hexagonal network of carbon atoms forming a one-atom thick planar sheet, has been emerged as a fascinating material for future nanoelectronics. Huge attention has been captured by its extraordinary electronic properties, such as bipolar conductance, half integer quantum Hall effect at room temperature, ballistic transport over ${\sim}0.4{\mu}m$ length and extremely high carrier mobility at room temperature. Several approaches have been developed to produce graphene, such as micromechanical cleavage of highly ordered pyrolytic graphite using adhesive tape, chemical reduction of exfoliated graphite oxide, epitaxial growth of graphene on SiC and single crystalline metal substrate, and chemical vapor deposition (CVD) synthesis. In particular, direct synthesis of graphene using metal catalytic substrate in CVD process provides a new way to large-scale production of graphene film for realization of graphene-based electronics. In this method, metal catalytic substrates including Ni and Cu have been used for CVD synthesis of graphene. There are two proposed mechanism of graphene synthesis: carbon diffusion and precipitation for graphene synthesized on Ni, and surface adsorption for graphene synthesized on Cu, namely, self-limiting growth mechanism, which can be divided by difference of carbon solubility of the metals. Here we present that large area, uniform, and layer controllable graphene synthesized on Cu catalytic substrate is achieved by acetylene-assisted CVD. The number of graphene layer can be simply controlled by adjusting acetylene injection time, verified by Raman spectroscopy. Structural features and full details of mechanism for the growth of layer controllable graphene on Cu were systematically explored by transmission electron microscopy, atomic force microscopy, and secondary ion mass spectroscopy.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2016년도 추계학술대회 논문집
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• pp.173.2-173.2
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• 2016

A two-step oxidation method was applied on Al6061 to debate the growth mechanism of plasma electrolytic oxidation (PEO) coating. The specimens were first oxidized in the primary electrolyte solution {$Na_3PO_4$ (8g/l), NaOH (2g/l), consequently, the specimens were transferred into a different electrolyte {$K_2ZrF_6$ (8g/l), NaOH (2g/l), $Na_2SiF_6$ (0.5g/l)} for further oxidation. The processes was conducted for various processing times. It was found the second step electrolyte component were reached to inner layers, in contrast to the primary step components which were thrustle to the outer layer. The presence of the secondary component in the inner layers were significantly varied with processing time which suggest the change in growth properties with processing time. further more the inside growth of the secondary component confirmed the increasing trend in the downward growth of the coating layer. The corrosion and hardness properties of the coatings were found highly improved with change in growth features with increasing the processing time.

• 한국전기전자재료학회논문지
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• 제26권6호
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• pp.446-450
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• 2013

Growth mechanism of GS-MBE(Gas source-Molecular Beam Epitaxy) has been investigated. We observed that the growth rate of GaN films is changing from 520 nm/h to 440 nm/h by the variation of V/III ratio under nitrogen-rich growth condition. It was explained that the amount of hydrogen on the growth front varies by the ammonia flow, and gallium hydrides are generated on the surface by a reaction of hydrogen and gallium, resultantly the amount of gallium supplying is changing along with the $NH_3$ flow. Reflection high energy electron diffraction (RHEED) observation was used to confirm the N-rich condition. The crystal quality of GaN was estimated by photoluminescence (PL) and X-ray diffraction (XRD).

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 하계종합학술대회 논문집
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• pp.275-278
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• 1999

We have grown vertically aligned carbon nanotubes in a large area of Co-Ni codeposited Si substrates by the thermal CVD using $C_2$H$_2$gas. Since the discovery of carbon nanotubes, Synthesis of carbon nanotubes for mass production has been achieved by several methods such as laser vaporization, arc discharge, and pyrolysis. In particular, growth of vertically aligned nanotubes is of technological importance for applications to FED. Recently, vertically aligned carbon nanotubes have been grown on glass by PECVD. Aligned carbon nanotubes can be also grown on mesoporous silica and Fe patterned porous silicon using CVD. Despite such breakthroughs in the growth, the growth mechanism of the alignment are still far from being clearly understood. Furthermore, FED has not been clearly demonstrated yet at a practical level. Here, we demonstrate that carbon nanotubes can be vertically aligned on catalyzed Si substrate when the domain density reaches a certain value. We suggest that steric hindrance between nanotubes at an initial stage of the growth forces nanotubes to align vertically and then nanotubes are further grown by the cap growth mechanism.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.210.1-210.1
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• 2014

The hexagonal boron nitride (h-BN) sheet, a 2D material like graphene sheet, is comprised of boron and nitrogen atoms. Similar to graphene, h-BN sheet has attractive mechanical properties while it has a wide band gap unlike graphene. Recently, many experimental groups studied the growth of single BN layer by chemical vapor deposition (CVD) method on the copper substrate. To study the initial stage of h-BN growth on the copper surface, we have performed density functional theory calculations. We investigate several adsorption sites of a boron or nitride atom on the Cu surfaces. Then, by increasing the number of adsorbed B and N atoms, we study formation behaviors of the BN flakes on the surface. Several types of BN flakes atoms such as triangular, linear, and hexagonal shapes are considered on the copper surface. We find that the formation of the BN flake in triangular shape is most favorable on the surface. On the basis of the theoretical results, we discuss the growth mechanism of h-BN layer on the copper surfaces in terms of its shapes in the initial stage of growth.

• Journal of Microbiology and Biotechnology
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• 제22권10호
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• pp.1375-1380
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• 2012

We previously isolated a rhizobacterium (Bacillus subtilis IJ-31) and demonstrated that its associated allelochemicals could indicate plant growth retardation. However, little is known about how the growth of plants is regulated by B. subtilis IJ-31 and its allelochemicals. In this study, we investigated whether plant growth retardation in this relationship occurred through the inhibition of gibberellin (GA) biosynthesis. GA $3{\beta}$-hydroxylase activity was found to be inhibited by B. subtilis IJ-31 and hydrocinnamic acid (HCA), which is one of the allelochemicals produced by B. subtilis IJ-31. Additionally, thin layer chromatography (TLC) demonstrated that B. subtilis IJ-31 culture broth and HCA both inhibit GA $3{\beta}$-hydroxylase (MBP-GA4) activity. The retardation of plants by HCA was then confirmed in vivo and in vitro using a Ryegrass and Arabidopsis growth retardation assay. Furthermore, treatment with either B. subtilis IJ-31 culture extract or its allelochemicals resulted in significant down-regulation of XTR9 gene expression in Arabidopsis. Overall, we identified the functional mechanism of plant growth retardation by B. subtilis IJ-31 and its allelochemicals.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2001년도 학술대회 논문집
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• pp.9-12
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• 2001

The microstructure evolution and the peritectic solidification of Sm$Ba_{2}$$Cu_{3}$ $O_{7-\delta}$ superconducting materials during the isothermal annealing were studied over the temperature range 1030-$1060^{\circ}C$ The faceted growth of the peritectic phase and its dependence upon Sm-diffusion in the liquid phase are discussed. A growth model is proposed to explain the growth shape of Sm123 crystals.

• 전기의세계
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• 제31권6호
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• pp.437-444
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• 1982

Although several kinds of conduction mechanism of PTC thermistor have been reported, there were few satisfying results. In this paper, the reported conduction mechanism theories were scrutinized and analyzed by using the experimental results. PTC thermistors for this study were manufactured by adding Sb$\_$2/O$\_$3/, AI$\_$2/O$\_$3/, TiO$\_$2/, and SiO$\_$2/ to BaTiO$\_$3/, and by sintering it at different temperatures. In order to analyze the conduction mechanism, R-T characteristics and its frequency dependence of specimens were measured. And also, the structures of specimens were studied. Especially this paper emphasized the explanation of the resistivity characteristics as the grain growth state of PTC thermistor specimens with respect to soaking temperature. According to the results, the resistivity of PTC thermistor whose grain was formed by semiconducting, was independent to the grain size at room temperature. For small and uniform grain size, the slope of the resistivity near the Curie temperature and the resistivity above the Curie temperature became greater and PTCR effect was improved.

• International Journal of Contents
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• 제8권1호
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• pp.10-15
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• 2012

Since MegaStudy started e-learning business for Korean high school students, the Korean e-learning industry began to expand and steadily gain attention. This paper focused on the analysis of the development of the Korean e-learning business for teens and the growth of MegaStudy. The three institutional mechanisms were used to examine the factors that aided the development of the business. The regulatory mechanism was the government policy to prevent the expansion of the offline private education sector, which greatly aided the growth of the e-learning business. The mimetic mechanism was the notion to mimic the characteristics of the Korean e-business initiatives. The normative mechanism involved the widespread social norm suggesting that every student should be given an equal opportunity of private education. This paper also examined the case of MegaStudy as a successful case of the e-learning companies. It analyzed the business model of MegaStudy, which is based on its advantage as the front-runner and its high-quality contents and services.

• 대한치과교정학회지
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• 제15권2호
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• pp.353-368
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• 1985

This present paper describes 3 clinical cases which were treated with Bioprogressive mechanism. Each patient has shown a deficient maxilla combined with prognathic and steep mandible. The purpose of treatment was planned to obtain the forward growth of maxilla and redirectioning of mandibular growth. The most noteworthy approach in the treatment was the application of Cl III intermaxillary elastics with upper protraction utility arch immediately after rapid maxillary expansion. In the analysis of the data obtained from pre- and post treatment lateral cephalogram, the result achieved by this method is very favolable to the correction of anteroposterior relationship of maxilla and mandible.