• Title/Summary/Keyword: growth/decay

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Under-Developed and Under-Utilized Eclipsing Binary Model Capabilities

  • Wilson, R.E.
    • Journal of Astronomy and Space Sciences
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    • v.29 no.2
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    • pp.115-121
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    • 2012
  • Existing but largely unused binary star model capabilities are examined. An easily implemented scheme is parameterization of starspot growth and decay that can stimulate work on outer convection zones and their dynamos. Improved precision in spot computation now enhances analysis of very precise data. An existing computational model for blended spectral line profiles is accurate for binary system effects but needs to include damping, thermal Doppler, and other intrinsic broadening effects. Binary star ephemerides had been found exclusively from eclipse timings until recently, but now come also from whole light and radial velocity curves. A logical further development will be to expand these whole curve solutions to include eclipse timings. An attenuation model for circumstellar clouds, with several absorption and scattering mechanisms, has been applied only once, perhaps because the model clouds have fixed locations. However the clouds could be made to move dynamically and be combined into moving streams and disks. An area of potential interest is polarization curve analysis, where incentive for modeling could follow from publication of observed polarization curves. Other recent advances include direct single step solutions for temperatures of both stars of an eclipsing binary and third body kinematics from combined light and velocity curves.

The Study of Growth and Photoconductive Characterization of $AgInS_2$ Single Crystal Thin Film by Hot Wall Epitaxy (Hot Wall Epitaxy(HWE) 방법에 의한 $AgInS_2$ 단결정 박막 성장과 광전도 특성)

  • 홍광준
    • Korean Journal of Crystallography
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    • v.9 no.2
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    • pp.96-106
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    • 1998
  • 수평 전기로에서 AgInS2 다결정을 합성하여 HWE 방법으로 AgInS2 단결정 박막을 반절연성 GaAs(100) 위에 성장하였다. AgInS2 단결정 박막은 증발원과 기판의 온도를 각각 680℃, 410℃로 성장하였다. 이때 단결정 박막의 결정성이 10 K에서 측정한 광발광 스펙트럼은 597.8 nm(2.0741 eV) 근처에서 엑시톤 방출 스펙트럼이 가장 강하게 나타났으며, 또한 이중결정 X-선 요동곡선(DCRC)의 반폭치(FWHM)도 121 arcsec로 가장 작게 측정되어 최적 성장 조건임을 알 수 있었다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293 K에서 각각 9.35×1023개/㎥, 2.94×10-2㎡/V·s였다. AgInS2 단결정 박막의 광전류 단파장대 봉우리들로부터 10 K에서 측정된 ΔCr(crystal field splitting)은 0.15eV, ΔSo(spin orbit coupling)는 0.0089 eV였다. 광전도 셀로서 응용성을 알아보기 위해 감도(γ), pc/dc(photocurrent/darkcurrent), 최대허용소비전력(maximum allowable power dissipation: MAPD), 응답시간(response time)등을 측정한 결과, S 증기 분위기에 열처리한 광전도 셀의 경우 γ=0.98, pc/dc=1.02×106, MAPD=312 mW, 오름시간(rise time)=10.4 ms, 내림시간(decay time)=10.8 ms로 가장 좋은 특성을 얻었다.

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Impact of CO2 Laser Pretreatment on the Thermal Endurance of Bragg Gratings

  • Gunawardena, Dinusha Serandi;Lai, Man-Hong;Lim, Kok-Sing;Ahmad, Harith
    • Journal of the Optical Society of Korea
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    • v.20 no.5
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    • pp.575-578
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    • 2016
  • The thermal endurance of fiber Bragg gratings (FBGs), written with the aid of 193-nm ArF excimer laser irradiation on H2-loaded Ge/B codoped silica fiber, and pretreated with a CO2 laser and a subsequent slow cooling process, is investigated. These treated gratings show relatively less degradation of grating strength during the thermal annealing procedure. The thermal decay characteristics of treated and untreated fiber, recorded over a time period of 9 hours, have been compared. The effect on the Bragg transmission depth (BTD) and the center-wavelength shift, as well as the growth of refractive-index change during the grating inscription process for both treated and untreated fiber, are analyzed.

Crystal growth and scintillation properties of CsI:Na (CsI:Na 결정 육성과 섬광 특성)

  • Cheon, Jong-Kyu;Kim, Sung-Hwan;Kim, H.J.
    • Journal of Sensor Science and Technology
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    • v.19 no.6
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    • pp.443-448
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    • 2010
  • In this work, the scintillation properties of CsI:Na crystal were investigated as radiation detection sensor. This scintillation material was grown by a 2-zone vertical Bridgman method. Under X-ray excitation the crystal shows a broad emission band between 280 nm and 690 nm wavelength range, peaking at 413 nm. Energy resolution for $^{137}Cs$ 662 keV $\gamma$-rays of the crystal was measured to be 6.9 %(FWHM). At room temperature, the crystal exhibits three exponential decay time components. The fast and major component of scintillation time profile of the crystal emission decays with a 457 ns time constant. Absolute light yield of the crystal was estimated to be 53,000 ph/MeV using LAAPD. The sample crystal shows proportionality of 30 % in the measured energy range from 31 to 1,333 keV. And the $\alpha/\beta$ ratio of the crystal was 0.14.

Growth of CdSe thin films using Hot Wall Eptaxy method and their photoconductive properties (HWE에 의한 CdSe 박막의 성장과 광전도 특성)

  • You, Sang-Ha;Hong, Kwang-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.344-348
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    • 2004
  • The CdSe thin films wee grown on the Si(100) wafers by a hot wall epitaxy method(HWE). The source and substrate temperature are $600^{\circ}C\;and\;430^{\circ}C$ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the timperature range 30K to 150K by impurity scatering and decreased in the temperature range 150K to 293K by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of $1.39{\times}10^7$, the MAPD of 335mV, and the rise and decay time of 10ms and 9.5ms, respectively

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Growth and optoelectrical properties for $Cd_{1-x}Zn_xS$ thin films byg Hot Wall Epitaxy method (HWE에 의한 $Cd_{1-x}Zn_xS$ 박막의 성장과 광전기적 특성)

  • Lee, Sang-Youl;Hong, Kwang-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.304-308
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    • 2004
  • The $Cd_{1-x}Zn_xS$ thin films were grown on the Si(100) wafers by a hot wall epitaxy method(HWE). The source and substrate temperature are $600^{\circ}C\;and\;440^{\circ}C$ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the $Cd_{0.53}Zn_{0.47}S$ samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of $1.65{\times}10^7$, the MAPD of 338mW, and the rise and decay time of 9.7ms and 9.3ms, respectively

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Growth and Photosensor Properties for $AgInS_2$ Single Crystal Thin Film ($AgInS_2$ 단결정 박막 성장과 광센서 특성)

  • Hong, Kwang-Joon;Baek, Seong-Nam
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.134-135
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    • 2006
  • $AgInS_2$ single crystal thin filmsl was deposited on throughly etched semi-insulator GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $680^{\circ}C$ and $410^{\circ}C$ respectively, and the thickness of the single crystal thin films is $6{\mu}m$. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $AgInS_2$ single crystal thin film, we have found that the values of spin orbit coupling ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 0.0098 eV and 0.15 eV at 10 K, respectively. In order to explore the applicability as a photoconductive cell, we measured the sensitivity ($\gamma$), the ratio of photocurrent to darkcurrent (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time. The result indicated that the samples annealed in S vapour the photoconductive characteristics are best. Therefore we obtained the sensitivity of 0.98, the value of pc/dc of $1.02{\times}10^6$, the MAPD of 312 mW, and the rise and decay time of 10.4ms and 10.8ms respectively.

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DEAD/DExH-Box RNA Helicases in Selected Human Parasites

  • Marchat, Laurence A.;Arzola-Rodriguez, Silvia I.;Cruz, Olga Hernandez-de la;Lopez-Rosas, Itzel;Lopez-Camarillo, Cesar
    • Parasites, Hosts and Diseases
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    • v.53 no.5
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    • pp.583-595
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    • 2015
  • DEAD/DExH-box RNA helicases catalyze the folding and remodeling of RNA molecules in prokaryotic and eukaryotic cells, as well as in many viruses. They are characterized by the presence of the helicase domain with conserved motifs that are essential for ATP binding and hydrolysis, RNA interaction, and unwinding activities. Large families of DEAD/DExH-box proteins have been described in different organisms, and their role in all molecular processes involving RNA, from transcriptional regulation to mRNA decay, have been described. This review aims to summarize the current knowledge about DEAD/DExH-box proteins in selected protozoan and nematode parasites of medical importance worldwide, such as Plasmodium falciparum, Leishmania spp., Trypanosoma spp., Giardia lamblia, Entamoeba histolytica, and Brugia malayi. We discuss the functional characterization of several proteins in an attempt to understand better the molecular mechanisms involving RNA in these pathogens. The current data also highlight that DEAD/DExH-box RNA helicases might represent feasible drug targets due to their vital role in parasite growth and development.

Towards grain-scale modelling of the release of radioactive fission gas from oxide fuel. Part I: SCIANTIX

  • Zullo, G.;Pizzocri, D.;Magni, A.;Van Uffelen, P.;Schubert, A.;Luzzi, L.
    • Nuclear Engineering and Technology
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    • v.54 no.8
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    • pp.2771-2782
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    • 2022
  • When assessing the radiological consequences of postulated accident scenarios, it is of primary interest to determine the amount of radioactive fission gas accumulated in the fuel rod free volume. The state-of-the-art semi-empirical approach (ANS 5.4-2010) is reviewed and compared with a mechanistic approach to evaluate the release of radioactive fission gases. At the intra-granular level, the diffusion-decay equation is handled by a spectral diffusion algorithm. At the inter-granular level, a mechanistic description of the grain boundary is considered: bubble growth and coalescence are treated as interrelated phenomena, resulting in the grain-boundary venting as the onset for the release from the fuel pellets. The outcome is a kinetic description of the release of radioactive fission gases, of interest when assessing normal and off-normal conditions. We implement the model in SCIANTIX and reproduce the release of short-lived fission gases, during the CONTACT 1 experiments. The results show a satisfactory agreement with the measurement and with the state-of-the-art methodology, demonstrating the model soundness. A second work will follow, providing integral fuel rod analysis by coupling the code SCIANTIX with the thermo-mechanical code TRANSURANUS.

A Review of Organ Dose Calculation Methods and Tools for Patients Undergoing Diagnostic Nuclear Medicine Procedures

  • Choonsik Lee
    • Journal of Radiation Protection and Research
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    • v.49 no.1
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    • pp.1-18
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    • 2024
  • Exponential growth has been observed in nuclear medicine procedures worldwide in the past decades. The considerable increase is attributed to the advance of positron emission tomography and single photon emission computed tomography, as well as the introduction of new radiopharmaceuticals. Although nuclear medicine procedures provide undisputable diagnostic and therapeutic benefits to patients, the substantial increase in radiation exposure to nuclear medicine patients raises concerns about potential adverse health effects and calls for the urgent need to monitor exposure levels. In the current article, model-based internal dosimetry methods were reviewed, focusing on Medical Internal Radiation Dose (MIRD) formalism, biokinetic data, human anatomy models (stylized, voxel, and hybrid computational human phantoms), and energy spectrum data of radionuclides. Key results from many articles on nuclear medicine dosimetry and comparisons of dosimetry quantities based on different types of human anatomy models were summarized. Key characteristics of seven model-based dose calculation tools were tabulated and discussed, including dose quantities, computational human phantoms used for dose calculations, decay data for radionuclides, biokinetic data, and user interface. Lastly, future research needs in nuclear medicine dosimetry were discussed. Model-based internal dosimetry methods were reviewed focusing on MIRD formalism, biokinetic data, human anatomy models, and energy spectrum data of radionuclides. Future research should focus on updating biokinetic data, revising energy transfer quantities for alimentary and gastrointestinal tracts, accounting for body size in nuclear medicine dosimetry, and recalculating dose coefficients based on the latest biokinetic and energy transfer data.