Growth and Photosensor Properties for $AgInS_2$ Single Crystal Thin Film

$AgInS_2$ 단결정 박막 성장과 광센서 특성

$AgInS_2$ single crystal thin filmsl was deposited on throughly etched semi-insulator GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $680^{\circ}C$ and $410^{\circ}C$ respectively, and the thickness of the single crystal thin films is $6{\mu}m$. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $AgInS_2$ single crystal thin film, we have found that the values of spin orbit coupling ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 0.0098 eV and 0.15 eV at 10 K, respectively. In order to explore the applicability as a photoconductive cell, we measured the sensitivity ($\gamma$), the ratio of photocurrent to darkcurrent (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time. The result indicated that the samples annealed in S vapour the photoconductive characteristics are best. Therefore we obtained the sensitivity of 0.98, the value of pc/dc of $1.02{\times}10^6$, the MAPD of 312 mW, and the rise and decay time of 10.4ms and 10.8ms respectively.