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http://dx.doi.org/10.5369/JSST.2010.19.6.443

Crystal growth and scintillation properties of CsI:Na  

Cheon, Jong-Kyu (Department of Radiation, Sorabol College)
Kim, Sung-Hwan (Department of Radiological Science, Cheongju University)
Kim, H.J. (School of Physics and Energy Sciences, Kyungpook National University)
Publication Information
Journal of Sensor Science and Technology / v.19, no.6, 2010 , pp. 443-448 More about this Journal
Abstract
In this work, the scintillation properties of CsI:Na crystal were investigated as radiation detection sensor. This scintillation material was grown by a 2-zone vertical Bridgman method. Under X-ray excitation the crystal shows a broad emission band between 280 nm and 690 nm wavelength range, peaking at 413 nm. Energy resolution for $^{137}Cs$ 662 keV $\gamma$-rays of the crystal was measured to be 6.9 %(FWHM). At room temperature, the crystal exhibits three exponential decay time components. The fast and major component of scintillation time profile of the crystal emission decays with a 457 ns time constant. Absolute light yield of the crystal was estimated to be 53,000 ph/MeV using LAAPD. The sample crystal shows proportionality of 30 % in the measured energy range from 31 to 1,333 keV. And the $\alpha/\beta$ ratio of the crystal was 0.14.
Keywords
bridgman method; CsI; light yield; scintillator;
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Times Cited By KSCI : 3  (Citation Analysis)
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