• Journal of Korean Society of Forest Science
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• v.103 no.4
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• pp.564-573
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• 2014

The objective of this study was to select a representative coastal disaster prevention forest type for each coastal area. In this study, we used cluster analysis with the results obtained from investigation for density of growing stock, tree height, DBH, and forest width and length of major coastal disaster prevention forests distributed in the west, the south, and the east coasts. The results showed that the coastal disaster prevention forests for each coast were classified into two types: a forest type with small DBH and high growing stock density (W1) or with high tree height (W2) in the west coast, a forest type with small tree height (S1) or with large DBH (S2) in the south coast, and a forest type with small growing stock density (E1) or with small tree height and low DBH (E2) in the east coast. The coastal disaster prevention forests located in Gurye beach (Hwangchon-ri, Wonbuk-myeon, Taean-gun, Chungcheongnam-do) and in Gohsapo beach (Unsna-ri, Byeonsan-myeon, Buan-gun, Jeollabuk-do) were selected as the representative forests of W1 and W2, respectively. In addition, the coastal disaster prevention forests located in Namyang beach (Namyang-ri, Seolcheon-myeon, Namhae-gun, Gyeongsangnam-do) and in Donggo beach (Donggo-ri, Sinji-myeon, Wando-gun, Jeollanam-do) were selected as the representative forests of S1 and S2, respectively. Last, the coastal disaster prevention forests located in Bonggil beach (Bonggil-ri, Yangbuk-myeon, Gyeongju-si, Gyeongsangbuk-do) and in Anmeok beach (Gyeonso-dong, Gangneung-si, Gangwon-do) were selected as the representative forests of E1 and E2, respectively. Our finding is expected to be used as baseline data in establishing the most appropriate coastal disaster prevention forest for each coast.

• Journal of Korean Institute of Industrial Engineers
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• v.38 no.3
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• pp.191-197
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• 2012

One-class classification (OCC) is one of the recent growing areas in data mining and pattern recognition. In the present study we examine a k-nearest neighbors data description (kNNDD) algorithm, one of the OCC algorithms widely used. In particular, we propose to use nonparametric estimation methods to determine the threshold of the kNNDD algorithm. A simulation study has been conducted to explore the characteristics of the proposed approach and compare it with the existing approach that determines the threshold. The results demonstrate the usefulness and flexibility of the proposed approach.

• International Journal of Safety
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• v.8 no.1
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• pp.14-17
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• 2009

The $Co^{60}$ $\gamma$-ray irradiation effects on the electrical and thermal characteristics of low density polyethylene crosslinked by Dicumyl peroxide (DCP) were investigated. We experimented on electrical properties as following; electrical tree inception and growing type for applying AC step voltage, AC breakdown strength, volume resistivity with increasing dosage. Also, chemical analyses were performed TGA, gel fraction. These electrical properties changed depending upon its crosslinking degree and byproducts from crosslinking reactions. Crosslinking reactions were considered causing by $\gamma$-ray irradiation and DCP had contained in low density polyethylene.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.334-338
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• 2006

Poly silicon TFT requires high quality dielectric film; conventional method of growing silicon dioxide needs highly hazardous chemicals such as silane. We have grown high quality dielectric film of silicon dioxide using non-hazardous chemical such as TFOS and ozone as reaction gases by APCVD. The films grown were characterized through C-V curves of MOS structures. Conventional APCVD requires high temperature processing where as in the process of current study, we developed a low temperature process. Interface trap density was substantially decreased in the silicon surface coated with the silicon dioxide film after annealing in nitrogen ambient. The interface with such low trap density could be used for poly silicon TFT fabrication with cheaper cost and potentially less hazards.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2004.05a
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• pp.736-741
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• 2004

In high-capacity disk drives with ever-growing track density, the allowable level of position error signal (PES) is becoming smaller and smaller. In order to achieve the high TPI disk drive, it is necessary to improve the writing accuracy during the STW(servo track writing) process through the reduction of TMR sources. Among the main contributors of the NRRO(Non-Repeatable Run-out) PES, the disk vibration and the HSA(head-stack assembly) vibration is considered to be one of the most significant factors. Also the most contributors of RRO(Repeatable Run- out) come from the contributors of NRRO which is written-in at the time of STW(servo track writing) process. In this paper, the experimental test result shows that the effect of NRRO on servo written-in RRO effectively can be reduced through a STW process under low dense medium condition such as semi-vacuum.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.121-121
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• 1999

Gallium nitride (GaN) semiconductor is intensively under investigation for commercialization of short wavelength light emitting devices and laser diodes. One of serious obstacles to overcome is to reduce the defect density in GaN film grown by various techniques such as MOCVD, HVPE, etc. Many research groups including SAIT are trying to improve the defect density to 106-107/cm2 from the level of 108-1010/cm2. We have investigated epitaxial growth behaviour of GaN thin and thick films under hidride vapour phase epitaxy (HVPE) condition. In this report, we present the microstructural and crystallographical characteristics of the GaN films grown on sapphire (0001) substrate which were studied by both conventional and high-resolution transmission electron microscopy (TEM). Also we present some microscopic analysis results obtained from GaN films grown by ELO(dpitzsial lateral overgrowth)-HVPE and from GaN quantum well structures grown by MOCVD. Another serious problem in growing GaN thick film by HVPE is internal micro-cracks. We also comment the origin of the micro-crack.

• Microbiology and Biotechnology Letters
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• v.22 no.3
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• pp.266-270
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• 1994

A bacteriocin was isolated from the supernatant fluid of M17G broth culture of Lactococcus sp. HY 449 strain, which showed strong inhibitory activity against the growth of selective indicator strain, Lactobacillus fermentum IFO3023. When the bacteriocin wasa added to the growing indicator cells or cell suspensions, viable cells and optical density were density were decreased, indicating bacteriolytic mode of action. Electron microscopic observation of indicator cells treated with bacteriocin revealed apparent damages on the cell surface and eventual lysis of cell walls.

• Journal of Korea Foundry Society
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• v.24 no.2
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• pp.79-84
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• 2004

In this study, the electromagnetic vibration is adopted for modifying eutectic Si phase and reducing its size. The higher the current density and frequency of electromagnetic vibration(EMV), the finer the size of eutectic Si phase. The tensile strength and elongation of EMVed alloy were highly improved. Measured twin probability of EMVed alloy at a frequency of 1000 Hz was approximately six times as high as that of the normal alloy. The mechanism for the increase in twin density due to EMV during solidification could be supposed from the fact that the preferential growth along <112> in silicon was suppressed by preventing Si atom from attaching to the growing interface of Si phase and by changing the solid/liquid interfacial energy of silicon. According to the result of UTS test, because of modification of eutectic Si, UTS and elongation are highly increased.

• Korean Journal of Materials Research
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• v.16 no.7
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• pp.408-411
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• 2006

An effective wet-chemical approach is demonstrated for growing large-area, selectively-patterned, and low-temperature-synthesized ZnO nanorods (ZNRs). The growth of ZNRs was enhanced on a Co layer. The selectivity and density were readily controlled by the control of the temperature when the substrate transfers into aqueous solution. The cross-sectional transmission electron microscopy image shows that single crystalline ZNRs grown along [0001] have good adhesion at interface between ZNRs/substrate. The turn-on field was 4 $V/{\mu}m$ at the emission current density of 1 ${\mu}A/cm^2$. The stable emission was obtained at 0.11 $mA/cm^2$ under 7.2 $V/{\mu}m$ over 10 hr. These results suggest that selectively-patterned ZNRs have the potential for use as field emitters in large-area field emission displays.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.393-394
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• 2006

Highly compressible Ni-Mo steels are attractive materials for PM due to high sinter density and ease of processing. Extra-fine Ni admixed PM steels have demonstrated improved mechanical properties and rolling contact fatigue resistance due to a more uniform microstructure and increased Ni diffusion during sintering. Sinter densities of single press single sinter XF Ni-Mo steels can approach $7.5\;g/cm^3$ at moderate compaction pressures. Leaner alloys based on extra-fine Ni powder are possible depending on the performance requirements of the PM steel part. Extra-fine Ni steels are particularly attractive for the growing market of high performance PM gears and sprockets.