• The Bulletin of The Korean Astronomical Society
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• v.41 no.1
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• pp.49.1-49.1
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• 2016

Solar System has evolved with numerous collisions among asteroids. Ancient catastrophic collisions of large parent bodies led the formation of asteroid families and relevant dustband structures up to the present day, and it would be interesting to address a question - "what happens if an asteroid collides with another asteroid?" Recent discoveries of "active asteroids" in the main-belt have attracted interest for their potential to witness a catastrophic collision in the current Solar System. So far, however, there is no direct evidence for catastrophic collision on active asteroids while several objects have been confirmed for other mechanisms (e.g., 596 Scheila for impact cratering, P/2013 R3 and P/2013 P5 for rotational breakup). The most potential candidate for catastrophic collision could be a sub-km active asteroid P/2010 A2, which is still controversial on its driving mechanism, but if confirmed, would have made P/2010 A2 the unique example of catastrophic collision on the current main asteroid belt. In this presentation, we revisit all of archival data of P/2010 A2 in a combination with our own observation using Subaru/Suprime-Cam on 2011 June, where we have a great benefit of a large orbital coverage. We found a grain size dependence of dust ejection velocity from P/2010 A2 (a power-law size distribution with an index of k~ -1/10), which is favorable to a catastrophic disruption scenario in agreement with laboratory impact experiments. At this conference, we plan to provide our understanding of the morphology of P/2010 A2 through a perspective of catastrophic collision.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.8
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• pp.602-607
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• 2013

Concern for the TOS (Transparent Oxide Semiconductor) is increasing with the recent increase in interest for flexible device. Especially MgZnO has attracted a lot of attention. $Mg_xZn_{1-x}O$, which ZnO-based wideband-gap alloys is tuneable the band-gap ranges from 3.36 eV to 7.8 eV. In particular, the flexible substrate, the crystal structure of the amorphous as well as the surface morphology is not good. So research of MgZnO thin films growth on flexible substrate is essential. Therefore, in this study, we studied on the effects of the oxygen partial pressure on the structural and crystalline of $Mg_{0.1}Zn_{0.9}O$ thin films. MgZnO thin films were deposited on PES substrate by using pulsed laser deposition. We used XRD and AFM in order to observe the structural characteristics of MgZnO thin films. UV-visible spectrophotometer was used to get the band gap and transmittance. Crystallization was done at a low oxygen partial pressure. The crystallinity of MgZnO thin films with increasing temperature was improved, Grain size and RMS of the films were increased. MgZnO thin films showed high transmittance over 80% in the visible region.

• Bulletin of the Korean Chemical Society
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• v.33 no.7
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• pp.2305-2308
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• 2012

Perovskite structured barium titanate particles ($BaTiO_3$) platelets were synthesized by molten salt synthesis and topochemical microcrystal conversion. As the precursors of $BaTiO_3$, plate-like $BaBi_4Ti_4O_{15}$ particles were first synthesized by the reaction of $Bi_4Ti_3O_{12}$, $BaCO_3$, and $TiO_2$ at $1080^{\circ}C$ for 3 h in $BaCl_2$-KCl molten salt. After the topochemical reactions, layer-structured $BaBi_4Ti_4O_{15}$ particles transformed to the perovskite $BaTiO_3$ platelets. $BaTiO_3$ particles with thickness of approximately $0.5{\mu}m$ and a length of $10-15{\mu}m$ retained the morphology feature of the $BaBi_4Ti_4O_{15}$ precursor. For <001> $Pb(Mg_{1/3}Nb_{2/3})O_3-32.5PbTiO_3$ (PMNT)-5 wt % PbO piezoelectric ceramics textured with 5 vol % of $BaTiO_3$ templates, the Lotgering factor reached 0.82, and $d_{33}$ was 870 pC/N.

• Korean Journal of Materials Research
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• v.20 no.1
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• pp.19-24
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• 2010

The current study examined Ag migration from the Ag paste bump in the SABiT technology-applied PCB. A series of experiments were performed to measure the existence/non-existence of Ag in the insulating prepreg region. The average grain size of Ag paste was 30 nm according to X-ray diffraction (XRD) measurement. Conventional XRD showed limitations in finding a small amount of Ag in the prepreg region. The surface morphology and cross section view in the Cu line-Ag paste bump-Cu line structure were observed using a field emission scanning electron microscope (FE-SEM). The amount of Ag as a function of distance from the edge of Ag paste bump was obtained by FE-SEM with energy dispersive spectroscopy (EDS). We used an electron probe micro analyzer (EPMA) to improve the detecting resolution of Ag content and achieved the Ag distribution function as a function of the distance from the edge of the Ag paste bump. The same method with EPMA was applied for Cu filled via instead of Ag paste bump. We compared the distribution function of Ag and Cu, obtained from EPMA, and concluded that there was no considerable Ag migration effect for the SABiT technology-applied printed circuit board (PCB).

• Nuclear Engineering and Technology
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• v.49 no.1
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• pp.178-188
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• 2017

To study the effects of zirconium (Zr) addition on the microstructure, hardness and the tensile properties of oxide dispersion strengthened (ODS) ferritic-martensitic steels, two kinds of 9Cr-ODS ferritic-martensitic steels with nominal compositions (wt.%) of $Fe-9Cr-2W-0.3Y_2O_3$ and $Fe-9Cr-2W-0.3Zr-0.3Y_2O_3$ were fabricated by the mechanical alloying (MA) of premixed powders and then consolidated by hot isostatic pressing (HIP) techniques. The experimental results showed that the average grain size decreases with Zr addition. The trigonal ${\delta}$-phase $Y_4Zr_3O_{12}$ oxides and body-centered cubic $Y_2O_3$ oxides are formed in the 9Cr-Zr-ODS steel and 9Cr non-Zr ODS steel, respectively, and the average size of $Y_4Zr_3O_{12}$ particles is much smaller than that of $Y_2O_3$. The dispersion morphology of the oxide particles in 9Cr-Zr-ODS steel is significantly improved and the number density is $1.1{\times}10^{23}/m^3$ with Zr addition. The 9Cr-Zr-ODS steel shows much higher tensile ductility, ultimate tensile strength and Vickers hardness at the same time.

• Korean Journal of Materials Research
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• v.1 no.2
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• pp.77-85
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• 1991

In this study we have investigated surface morphologies of as-deposited silicon films on the various deposition conditions using LPCVD(Low Pressure Chemical Vapor Deposition) System. The processing conditions such as deposition temperature, pressure and flow rate of $SiH_4$ gas were found to determine the surface morphology. The optimum temperature of maximum effective surface area increased with increasing the deposition pressure and the flow rate of $SiH_4$ gas, These experimental results were also in quite good agreement with the equation derived under the assumption that the maximum effective surface area is obtained on the condition of maximum nucleation rate.

• Journal of the Korean Ceramic Society
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• v.51 no.6
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• pp.605-611
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• 2014

$SrGd_{2-x}(MoO_4)_4:Er^{3+}/Yb^3$ phosphors with doping concentrations of $Er^{3+}$+ and $Yb^{3+}$ ($x=Er^{3+}+Yb^{3+}$, $Er^{3+}=0.05$, 0.1, 0.2, and $Yb^{3+}=0.2$, 0.45) were successfully synthesized by the cyclic microwave-modified sol-gel method, and their upconversion mechanism and spectroscopic properties have been investigated in detail. Well-crystallized particles showed a fine and homogeneous morphology with grain sizes of $2-5{\mu}m$. Under excitation at 980 nm, $SrGd_{1.7}(MoO_4)_4:Er_{0.1}Yb_{0.2}$ and $SrGd_{1.5}(MoO_4)_4:Er_{0.05}Yb_{0.45}$ particles exhibited a strong 525-nm emission band, a weak 550-nm emission band in the green region, and a very weak 655-nm emission band in the red region. The Raman spectra of the doped particles indicated the domination of strong peaks at higher frequencies of 1023, 1092, and $1325cm^{-1}$ and at lower frequencies of 223, 2932, 365, 428, 538, and $594cm^{-1}$ induced by the incorporation of the $Er^{3+}$+ and $Yb^{3+}$+ elements into the $Gd^{3+}$ site in the crystal lattice, which resulted in the unit cell shrinkage accompanying a new phase formation of the $[MoO_4]^{2-}$ groups.

• Journal of the Korean Ceramic Society
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• v.54 no.3
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• pp.243-248
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• 2017

Pd-doped $SnO_2$ thick film with a pure tetragonal phase was prepared on patterned Pt electrodes by an ink dropping method. Nanostructured $SnO_2$ powder with a diameter of 10 nm was obtained by a modified hydrazine method. Then the ink solution was fabricated by mixing water, glycerol, bicine and the Pd-doped $SnO_2$ powder. When the Pd doping concentration was increased, the grain size of the Pd-doped $SnO_2$ thick film became smaller. However, an agglomerated and extruded surface morphology was observed for the films with Pd addition over 4 wt%. The orthorhombic phase disappeared even at a low Pd doping concentration and a PdO peak was obtained for a high Pd doping concentration. The crack-free Pd-doped $SnO_2$ thick films were able to successfully fill the $30{\mu}m$ gap of the patterned Pt electrodes by the optimized ink dropping method. The prepared 3 wt% Pd-doped $SnO_2$ thick films showed monoxide gas responses ($R_{air}/R_{CO}$) of 4.0 and 35.6 for 100 and 5000 ppm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.154-157
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• 2003

$TiO_2$ thin films were fabricated by RF magnetron sputtering system at by controlling deposition times, ratios of $Ar:O_2$ partial presser ratio and substrate conditions. And the surface, cross-section morphology, microstructure, and composition ratio of the films were analyzed by FE-SEM, TEM and XPS. Besides, the optical absorption and transmittance of the $TiO_2$ films were measured by a UV-VIS-NIR Spectrophotometer, and photocatalytic properties were studied by G${\cdot}$C Analyzer & Data Analysis system. As the result, when $TiO_2$ thin film was made at deposition time of 120[min] and $Ar:O_2$ ratio of 60:40, the best structural and optical properties among many thin films could be accepted. The best results of properties were as follows: thickness; 360~370[nm), grain size; 40[nm], gap between two peak binding energy; $5.8{\pm}0.05[eV]$ ($2_{p3/2}$ peak and $2_{p1/2}$ peak of Ti was show at $458.3{\pm}0.05[eV]$ and $464.1{\pm}0.05[eV]$ respectively), binding energy; $530{\pm}0.05[eV]$, optical energy band gap; 3.4[eV].

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.9
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• pp.5743-5747
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• 2015

In this study, Fe-based bulk amorphous alloy powder manufactured using gas atomization fabrication was used for laser welding. the fracture behavior of welding layer were analyzed. Tensile test results show that the destruction occurred immediately after the elastic deformation, After plastic deformation of the substrate, the destruction occurred. The actual maximum tensile strength of the welding layer and the substrate are 959.9MPa and 220.4MPa. welding layer were each $485.5{\pm}21$ and $197.4{\pm}14$ to the substrate and the actual microhardness, The welding layer has very high hardness. The welding layer showed a very weak fine acicular structure. The base material was shown in the micro structure appear a coarse grain. SEM observations of the fracture after the tensile test. Fracture morphology of the base metal and the welding layer showed ductile fracture and brittle fracture, respectively.