• Bulletin of the Korean Chemical Society
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• 제34권10호
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• pp.2942-2946
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• 2013

Nanostructured Ag thin films could be facilely prepared by soaking glass substrates in ethanolic solutions containing $Ag_2O$ powders at an elevated temperature. The formation of zero-valent Ag was corroborated using X-ray diffraction and X-ray photoelectron spectroscopy. The deposition of Ag onto a glass substrate was readily controlled simply by changing the reaction time. Due to the aggregated structures of Ag, the surface-enhanced Raman scattering spectra of benzenethiol could be clearly identified using the Ag-coated glass. The enhancement factor at 514.5 nm excitation estimated using benzenethiol reached $1.0{\times}10^5$ while the detection limit of rhodamine 6G was found to be as low as $1.0{\times}10^{-13}$ M. Since this one-pot fabrication method is eco-friendly and is suitable for the mass production of diverse Ag films, it is expected to play a significant role in the development of surface plasmon-based analytical devices.

• 반도체디스플레이기술학회지
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• 제9권4호
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• pp.1-5
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• 2010

The PVA (poly-vinyl alcohol) insulators were spun coated onto ITO coated glass substrates with the capacitors of Glass/ITO/PVA/Al structure. The effects of PVA concentrations (3.0, 4.0 and 5.0 wt%) on the morphology and electrical properties of the films were investigated. As the concentration of PVA increased from 3.0 to 5.0 wt%, the leakage current of device decreased from 17.1 to 0.23 pA. From the AFM measurement, the RMS value decreased with increasing PVA concentration, showing the improvement of insulator film roughness. The capacitances of the films with PVA concentrations of 4.0 and 5.0 wt% were about 28.1 and 24.2 nF, respectively. The lowest leakage current of 1.77 PA was obtained at the film thickness of 117.5 nm for the device with fixed PVA concentration of 5.0 wt%.

• Bulletin of the Korean Chemical Society
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• 제30권4호
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• pp.853-856
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• 2009

Highly polycrystalline copper indium diselenide (CuInSe2, CIS) thin films were deposited on glass or ITO glass substrates by two-stage metal organic chemical vapor deposition (MOCVD) at relatively mild conditions, using Cuand In/Se-containing precursors. First, pure Cu thin film was prepared on glass or ITO glass substrates by using a single-source precursor, bis(ethylbutyrylacetate)copper(II) or bis(ethylisobutyrylacetato)copper(II). Second, on the resulting Cu films, tris(N,N-ethylbutyldiselenocarbamato)indium(III) was treated to produce CuInSe2 films by MOCVD method at 400 ${^{\circ}C}$. These precursors are very stable in ambient conditions. In our process, it was quite easy to obtain high quality CIS thin films with less impurities and uniform thickness. Also, it was found that it is easy to control the stoichiometric ratio of relevant elements on demands, leading to Cu or In rich CIS thin films. These CIS films were analyzed by XRD, SEM, EDX, and Near-IR spectroscopy. The optical band gap of the stoichiometric CIS films was about 1.06 eV, which is within an optimal range for harvesting solar radiation energy.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.338-338
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• 2007

Photo-conductive properties of CdS films deposited on glass substrates by a reactive sputtering in Ar atmosphere were characterized as a function of working pressure and the film thickness. The XRD measurements of CdS films revealed obvious (002) preferred orientation. In 300nm-thick of films, difference between dark and photo-resistance increases with increasing working pressure within the films. The films at 5 mTorr of working pressure show a dark resistance of approximately $1\;{\times}\;10^6\;{\Omega}/{\square}$ and a photo-resistance of $3\;{\times}\;10^4\;{\Omega}/{\square}$. The decrease dark- and photo-resistance of films as thickness decrease were $1.4\;{\times}\;10^6$ and $3\;{\times}\;10^4\;{\Omega}/{\square}$, respectively. CdS films deposited on glass substrates are considered tobe suitable for photo-conductivity materials in stealth radome applications.

• 반도체디스플레이기술학회지
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• 제17권3호
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• pp.31-35
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• 2018

Tungsten disulfide($WS_2$) thin films were directly deposited by direct-current(DC) sputtering and annealed by rapid thermal processing(RTP) to materialize two-dimensional p-type transition metal dichalcogenide (TMDC) thin films on soda-lime glass substrates without any complicated exfoliation/transfer process. $WS_2$ thin films deposited at various DC sputtering powers from 80 W to 160W were annealed at different temperatures from $400^{\circ}C$ to $550^{\circ}C$ considering the melting temperature of soda-lime glass. The optical microscope results showed the stable surface morphologies of the $WS_2$ thin films without any defects. The X-ray photoelectron spectroscopy (XPS) results and the Hall measurement results showed stable binding energies of W and S and high carrier mobilities of $WS_2$ thin films.

• 한국레이저가공학회:학술대회논문집
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• 한국레이저가공학회 2001년도 추계학술발표대회 논문개요집
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• pp.61-64
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• 2001

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 추계학술대회 초록집
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• pp.99.2-99.2
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• 2011

Transparent conducting oxides (TCOs) supported on glass are widely used as substrates in PEC studies for photovoltaic hydrogen generation applications However, high sheet resistane ($10{\sim}15{\Omega}/cm^2$) and fragileness of glass-supported TCO substrates are the obstacles to produce the large area PEC cells. Such internal sheet resistance is detrimental to efficient collection of photogenerated majority charge carriers at the photoactive material and electrolyte interface. Moreover, these TCO substrates are very expensive and consume about 40~60% cost of the devices. Hence, a low sheet resistance of the substrate is a key point in improving the performance of PEC devices. Metallic substrates coated with a photoactive material would be a good choice for efficient charge collection. Such metal substrates based photanodes are best candidate for large-scale phtoelectrochemical water splitting for hydrogen generation. In this study, we report the enhanced PEC performance of $WO_3$ film on metal(chemical etched, bare) substrate. It is proposed that interface between $WO_3$ and the metal substrate is responsible for efficient charge transfer and demonstrated significant improvement in the photoelectrochmical performance. X-ray diffration and FESEM suduies reveled that $WO_3$ films are monoclinic, porous, polycrystalline with average grain size of ~50nm. Photocurrent of $WO_3$ prepared on metal substrates was measured in 0.5M $H_2SO_4$ electroyte under simulated $100mW/cm^2$ illumination.

• 대한전자공학회논문지TE
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• 제39권2호
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• pp.6-10
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• 2002

플라스틱 기반 평판디스플레이 장치를 위한 Al 박막(1000-4000${\AA}$)을 직류-마그네트론 스퍼터링으로 유리 기판과 고분자 플라스틱 기판위에 증착하였다. 고분자 플라스틱 기판위에 증착된 Al박막의 전기적 특성을 향상시키고, 열 팽창을 줄이기 위하여 단계적 열 처리법을 사용하였다. 이러한 공정을 사용함으로써, 고분자 기판위에 증착된 박막의 크랙과 기판의 휨현상이 없는 Al 박막을 성공적으로 증착하였다. 또한, Al 박막의 열처리와 증착공정은 모두 200$^{\circ}C$ 이하에서 이루어 졌기 때문에, 이러한 저온 공정은 고분자 플라스틱 기판에 적용이 가능하다. Al 박막의 특성과 신뢰성을 조사하기 위하여 주사 전자 현미경(SEM), 원자력 현미경(AFM), X-선 회절 분석법(XRD)과 비저항등의 전기적 특성을 측정하였다.

• 마이크로전자및패키징학회지
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• 제16권4호
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• pp.17-22
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• 2009

Two different organic-inorganic hybrid thin film transistors (OITFTs) with the structures of glass/ITO/ZnO/PMMA/Al (staggered structure) and glass/ITO/PMMA/ZnO/Al (inverted staggered structure), were fabricated and their electrical and structural properties were compared. The ZnO thin films used as active channel layers were deposited by the atomic layer deposition (ALD) method at a temperature of $100^{\circ}C$. To investigate the effect of the substrates on their properties, the ZnO films were deposited on bare glass, PMMA/glass and ITO/glass substrates and their crystal properties and surface morphologies were analyzed. The structural properties of the ZnO films varied with the substrate conditions. The ZnO film deposited on the ITO/glass substrate showed better crystallinity and morphologies, such as a higher preferred c-axis orientation, lower FWHM value and larger particle size compared with the one deposited on the PMMA/glass substrate. The field effect mobility ($\mu$), threshold voltage ($V_T$) and $I_{on/off}$ switching ratio for the OITFT with the staggered structure were about $0.61\;cm^2/V{\cdot}s$, 5.5 V and $10^2$, whereas those of the OITFT with the inverted staggered structure were found to be $0.31\;cm^2/V{\cdot}s$, 6.8 V and 10, respectively. The improved electrical properties for the staggered OITFTs may originate from the improved crystal properties and larger particle size of the ZnO active layer.

• 한국전기전자재료학회논문지
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• 제17권8호
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• pp.846-851
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• 2004

Transparent conducting indium tin oxide (TC-ITO) thin films on polymeric substrates have been deposited by a dc reactive magnetron sputtering without heat treatments. The polymeric substrates are acryl (AC), poly carbornate (PC), and polyethlene terephthalate (PET) as well as soda lime glass is also used to compare with the polymeric substrates. Sputtering parameters are an important factor for high quality of TC-ITO thin films prepared on polymeric substrates. Furthermore, the material, electrical and optical properties of as-deposited ITO films are dominated by the ratio of oxygen partial pressure. As the experimental results, the surface roughness of ITO films becomes rough as the oxygen partial pressure increases. The electrical resistivity of as-deposited ITO films decreases initially, and then increases with the increase of oxygen partial pressure. The optical transmittance at visible wavelength for all polymeric substrates is above 82 %.