• Bulletin of the Korean Chemical Society
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• v.35 no.3
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• pp.743-748
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• 2014

In this work, we describe a very simple electroless deposition method to prepare moderate-SERS-active nanostructured Pd films deposited on the glass substrates. To the best of our knowledge, this is the first report on the one-pot electroless method to deposit Pd nanostructures on the glass substrates. This method only requires the incubation of negatively charged glass substrates in ethanol-water mixture solutions of $Pd(NO_3)_2$ and butylamine at elevated temperatures. Pd films are then formed exclusively and evenly on glass substrates. Due to the aggregated structures of Pd, the SERS spectra of benzenethiol and organic isonitrile could be clearly identified using the Pd-coated glass as a SERS substrate. This one-step fabrication method of Pd thin film on glass is cost-effective and suitable for the mass production.

• Korean Journal of Materials Research
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• v.32 no.12
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• pp.515-521
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• 2022

Various types of optical materials and devices used in special environments must satisfy durability and optical properties. In order to improve the durability of zinc sulfide multispectral (MS ZnS) substrates with transmission wavelengths from visible to infrared, Ge-Sb-Se-based chalcogenide glass was used as a sealing material to bond the MS ZnS substrates. Wetting tests of the Ge-Sb-Se-based chalcogenide glass were conducted to analyze flowability as a function of temperature, by considering the glass transition temperature (T_g) and softening temperature (T_s). In the wetting test, the viscous flow of the chalcogenide glass sample was analyzed according to the temperature. After placing the chalcogenide glass disk between MS ZnS substrates (20 × 30 mm), the sealing test was performed at a temperature of 485 ℃ for 60 min. Notably, it was found that the Ge-Sb-Se-based chalcogenide glass sealed the MS ZnS substrates well. After the MS ZnS substrates were sealed with chalcogenide glass, they showed a transmission of 55 % over 3~12 ㎛. The tensile strength of the sealed MS ZnS substrates with Ge-Sb-Se-based chalcogenide glass was analyzed by applying a maximum load of about 240 N, confirming its suitability as a sealing material in the far infrared range.

• Journal of the Korean Ceramic Society
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• v.56 no.6
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• pp.526-533
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• 2019

Indialite/cordierite glass-ceramics demonstrate excellent microwave dielectric properties such as a low dielectric constant of 4.7 and an extremely high quality factor Qf of more than 200 × 10³ GHz when crystallized at 1300℃/20 h, which are essential criteria for application to 5G/6G mobile communication systems. The glass-ceramics applied to dielectric resonators, low-temperature co-fired ceramic (LTCC) substrates, and direct casting glass substrates are reviewed in this paper. The glass-ceramics are fabricated by the crystallization of glass with cordierite composition melted at 1550℃. The dielectric resonators are composed of crystallized glass pellets made from glass rods cast in a graphite mold. The LTCC substrates are made from indialite glass-ceramic powder crystallized at a low temperature of 1000℃/1 h, and the direct casting glass-ceramic substrates are composed of crystallized glass plates cast on a graphite plate. All these materials exhibit excellent microwave dielectric properties.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.373-376
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• 2008

New glass compositions for lead free, low temperature sealing glass frit was examined in $ZnO-V_2O_5-P_2O_5$ glass system which can be used sealing material for PDP to be made of soda lime glass substrates. Among many glass compositions, KFS-C glass showed low glass transition point (Tg) and good fluidity and adhesion characteristics when it was tested by flow button method at low temperature of $420^{\circ}C$. Its Tg was $317^{\circ}C$ and thermal expansion coefficient (CTE) was $70{\times}10^{-7}/K$. The glass frit was mixed with an organic vehicle to make a paste and it was dispensed and sealed with soda lime glass substrates at $420^{\circ}C$ for 10min. Sealed glass panels also showed good adhesion strength even sealed at low temperature of $420^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.405-406
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• 2008

The amorphous indium zinc oxide (IZO) thin films were deposited on polyethersulfone (PES) and glass substrates by facing targets sputtering. IZO thin films deposited as functions of gas flow ratio on PES and glass substrates, respectively. The electrical, optical and structural properties of IZO thin films were evaluated by a Hall Effect Measurement, an X-Ray Diffractormeter, UV/VIS spectrometer in visible range and a scanning electron microscopy, respectively. As-deposited IZO thin films exhibited resistivity of $5.4\times10^{-4}$ and $4.5\times10^{-4}$ [$\Omega$-cm] on PES and glass substrates, respectively. The optical transmittance showed over 85% in the visible region on PES and glass substrates.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.1
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• pp.24-29
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• 2001

PZT thin films(4000A) have prepared onto 1737 corning glass and ITO coated glass substrates with a RF magnetron sputtering system using Pb_{1.05}(Zr_{0.52},Ti_{0.48})O_3$ceramic target, Electrical properties of PZT thin film deposited after ITO coated glass were P${\gamma}$ was decreased by 25% after 109cycles, respectively. With the RTA treatment duration and temperature increased, the crystallization of PZT thin films were enhanced, however, the leakage current density became higher. The leakage current mechanism was found to be space charge conduction by the defects and oxygen vacancies existing in PZT and PZT/bottom electrode interfaces.

• Laser Solutions
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• v.13 no.1
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• pp.6-10
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• 2010

Crystallization of 100 nm thick amorphous silicon (a-Si) films on glass substrates was carried out by using a double laser irradiation method. Depending on a-Si deposition method or glass types, the quality of crystallized silicon film varies significantly. For a-Si films deposited with high concentration of impurities, large grains or high crystallinity can not be achieved. Crystallization with different a-Si deposition methods confirmed that for the polycrystallization of a-Si films on glass substrates, controlling the impurity density during substrate preparation is critical.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.263-266
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• 2000

Effects of excess Pb(50 mole ％) on the crystallization properties of amorphous PZT thin films on the glass substrates by post-annealing in oxygen ambient were investigated to lower the crystallization temperature of the PZT thin films with a single perovskite phase. The PZT thin films(350nm) were prepared on Pt/Ti/corning glass(1737) substrates. The PZT thin films and bottom electrode were deposited by RF magnetron sputtering. Crystallization properties of PZT thin films were strongly dependent on RTA(Rapid Thermal Annealing) temperature. We were able to obtain a perovskite structure of PZT at 600$^{\circ}C$ for 10min. After thermal treatments were done, electrical properties such as I-V, P-E, and fatigue were measured.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.27.1-27.1
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• 2009

In recent years, ZnO nanostructures have drawn considerable attentions for the development of futuristic electronic devices due to their superior structural and optical properties. As the growth of ZnO nanowires by MOCVD is a bottom-up technique, the nature of substrates has a vital role for the dimension and alignment of the nanowires. However, in the pursuit of next generation ZnO based nanodevices, it would be highly preferred if well-ordered ZnO nanowires could be obtained on various substrates like sapphire, silicon, glass etc. Vertically aligned nanowires were grown on A and C-plane sapphire substrates, where as nanopencils were obtained on R-plane sapphire substrates. In addition, C-axis oriented vertical nanowires were also found using an interfacial layer(aluminum nitride film) on silicon substrates. On the other hand, long nanowires were found on Ga-doped ZnO film on glass substrates. Structural and optical properties of the ZnO nanowires on various substrates were also investigated.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.302.1-302.1
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• 2014

We report the growth of high quality zinc oxide (ZnO) thin films on amorphous glass substrates and their structural and optical characteristics. For the growth of ZnO films, mechanically exfoliated ultrathin graphite or graphene layers were used as an intermediate layer because ZnO does not have any heteroepitaxial relationship with the amorphous substrates, which significantly improved the crystallinity of the ZnO films. Structural and optical characteristics of the films were investigated using scanning and transmission electron microscopy, x-ray diffraction, and variable temperature photoluminescence spectroscopy. High crystallinity and excellent optical characteristics such as stimulated emission were exhibited from the high quality ZnO films grown on glass substrates.