• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.663-666
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• 2000

Laser direct writing of micro-patterned copper lines has been achieved by pyrolytic decomposition of copper formate films (Cu(HCOO)$_2$$.$4H$_2$O), as a precursor, using a focused Ar$\^$+/ laser beam ($\lambda$= 514 nm) on PCB boards and glass substrates. The linewidth and thickness of the lines were investigated as a function of laser power and scan speed. The profiles of the lines were measured by scanning electron microscope (SEM), surface profiler (${\alpha}$-step) and atomic force microscopy (AFM). The electrical resistivities of the patterned lines were also investigated as a function of laser parameter using probe station and semiconductor analyzer. we compared resistivities of the patterned lines with that of the Cu bulk, respectively.

• Journal of Industrial and Engineering Chemistry
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• 제68권
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• pp.209-219
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• 2018

Colloidally stable organic-inorganic (O-I) hybrid nanoparticles could be prepared using an alkoxysilanefunctionalized amphiphilic polymer (AFAP) precursor. O-I hybrid sols could maintain colloidal stability for six months even at 45% solid content and be coated onto glass as well as PET film to form transparent O-I hybrid films. The formation of O-I hybrid nanoparticles dispersed in cured coating films could be confirmed using scanning electron microscopy. The cured coating film showed 3H and 5H pencil hardness on PET and glass, respectively. Nanoindentation measurements also showed that their modulus and hardness was varied with the type of AFAP used in its preparation.

• 한국결정성장학회지
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• 제12권4호
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• pp.184-189
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• 2002

초음파 분무 MOCVD법에 의한 $(Pb_{0.91}La_{0.09})(Zr_{0.65}Ti_{0.35})O_3$(PLZT) 박막의 제조와 광학적, 전기적 특성을 조사하였다. Pb의 휘발성을 고려하여 0.2M의 precursor에 Pb를 5 wt%, 10 wt%과잉 첨가하였다. ITO-coated glass 기판 위에 산소분위기에서 30분 동안 증착한 후 in-situ 상태의 RTA (rapid thermal annealing) 방식으로 열처리를 하였다. 단일 perovskite상의 결정화 온도는 $600^{\circ}C$였다. Pb를 10 wt% 과잉 첨가한 박막의 최대 광투과율은 520nm에서 약 84%로 광학적 특성이 우수하였으며, 유전상수는 약 308의 값을 가졌고, 누설전류는 Pb를 0, 5 wt% 과잉 첨가한 PLZT 박막보다 낮은 값을 가졌다.

• 한국전기전자재료학회논문지
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• 제33권4호
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• pp.315-320
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• 2020

Methylammonium lead iodide (MAPbI₃) thin films were grown at low temperatures on glass substrates via 3-zone chemical vapor deposition. Lead iodide (PbI₂) and lead bis (dipivaloylmethanate) [Pb(dpm)₂] precursors were used as lead sources. Due to the high sublimation temperature (~400℃) of the PbI₂ precursor, a low substrate temperature could not be constantly maintained. Therefore, MAPbI₃ thin films degraded into the PbI₂ phase. In contrast, for the Pb(dpm)₂ precursor, a substrate temperature of ~120℃ was maintained because the sublimation temperature of Pb(dpm)₂ is as low as 130℃ at a high vapor pressure. As a result, high-quality MAPbI₃ thin films were successfully grown on glass substrates using Pb(dpm)₂. The rms (root-mean-square) roughness of MAPbI₃ thin films formed from Pb(dpm)₂ was as low as ~19.2 nm, while it was ~22.7 nm for those formed using PbI₂. The grain size of the films formed from Pb(dpm)₂ was as large as approximately 350 nm.

• 한국광물학회지
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• 제20권1호
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• pp.1-6
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• 2007

물유리, 수산화 마그네슘, 리튬염을 이용하여 $90{\pm}5^{\circ}C$에서 2단계로 수열반응시켜 팽윤성이 우수한 $12\;{\AA}$ 헥토라이트를 합성하였다. 합성과정은 우선 $SiO_{2}$ 성분을 약 30% 함유한 물유리와 수산화 마그네슘을 화학양론적 조성으로 물에 혼합하고 교반시키면서 pH를 $6{\sim}8$로 유지시켰다. 그 후 수용액을 $90{\pm}5^{\circ}C$의 온도에서 1차로 반응시켜 슬러리 형태의 전구체(precursor)를 제조하였으며 이것을 세척하여 과잉염을 제거하였다. 이때, 리튬 (ie, LiCl)을 팔면체 치환용 이온으로 혼합하였다. 위와 같이 제조된 수용액을 약 10시간 동안 위와 동일한 온도에서 2차로 반응시켜 겔 형태의 헥토라이트를 생성시켰다. 합성된 헥토라이트의 분말 X-선 회절패턴은 자연산 헥토라이트와 일치하였고 FE-SEM으로 관찰한 결과, 직경 50 nm의 균질한 입자로 이루어져 있었다. 이온교환능력과 팽윤성을 측정한 결과, 각각 90 cmol/kg, $60{\sim}70\;ml/2\;g$으로 확인되었으며 에칠렌글리콜 처리 후, 저면간격은 $12\;{\AA}$에서 $17.4\;{\AA}$으로 이동하였다.

• 한국수소및신에너지학회논문집
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• 제27권4호
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• pp.329-334
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• 2016

Hydrogen is eco-friendly alternative energy source and the photoelectrochemical water splitting is believed to be one of the promising methods for hydrogen production. Many researchers have studied several potential photocatalysts to increase the photoelectochemical performance efficiency for hydrogen conversion. In this study, the GO (graphene oxide) was prepared by Tour's method and was dispersed in precursor solutions of $WO_3$ and $BiVO_4$. Those precursor solutions were spin-coated on FTO glass and several photocatalyst thin films of $WO_3$, $BiVO_4$ and $WO_3/BiVO_4$ were prepared by calcination. The morphologies of prepared photocatalyst thin films were measured by scanning electron microscope. The photoelectrochemical performances of photocatalyst thin films with rGO (reduced graphene oxide) and without rGO were analyzed systematically.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.339.1-339.1
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• 2014

In this paper we studied the application of inter-poly dielectric as silicon dioxide-like film was deposited by the higher energy assisting deposition (HEAD) process the modified CCP process, which enables low temperature (LT) process and improving film density. In these experiments the relative hydrogen concentration of $SiO_2$-like films deposited on silicon substrate were analyzed by the secondary ion mass spectroscopy (SIMS) and it was shown that our lower hydrogenated oxide (LHO) film prepared by HEAD process with the precursor contained the siloxane species had lower hydrogen concentration, $8{\times}10{\cdot}^{22}cm{\cdot}^3$ than that of the commercial undoped silicon glass (USG) film ($1{\times}10{\cdot}^{21}cm{\cdot}^3$) prepared by the high density plasma-chemical vapor deposition (HDP-CVD). We consider that the LHO film deposited by HEAD process used as high performance material into Flash memory devices.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 추계학술대회 논문집
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• pp.396-396
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• 2009

Chalcopyrite semiconductor $CuInSe_2$ nanoparticles were prepared using a low temperature colloidal route by reacting the starting materials (CuI, $InI_3$ and $Na_2Se$) in solvents. After synthesised $CuInSe_2$ nanoparticles precursors were mixed with organic binder for the viscosity of the precursor slurry to be suitable for the doctor blade method. The mixture of $CuInSe_2$ and binder was deposited onto molybdenum-coated sodalime glass substrates to form thin film. The precursor thin films were preheated on the hot plate to remove remaining solvents and binder material. After subsequent thermal processing of the thin film under a selenium ambient, $CuInSe_2$ absorber layer with grain size significantly lager than that of the nanoparticles was formed.

• Current Photovoltaic Research
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• 제2권4호
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• pp.177-181
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• 2014

$Cu_2ZnSn(S_xSe_{1-x})_4$ (CZTSSe) absorber thin films were prepared on Mo coated soda lime glass substrates by sulfo-selenization of sputtered stacked Zn-Sn-Cu precursor thin films. The Zn-Sn-Cu precursor thin films were sulfo-selenized inside a graphite box containing S and Se powder using rapid thermal processing furnace at $540^{\circ}C$ in Ar atmosphere with pre-treatment at $300^{\circ}C$. The effect of different S/Se ratio on the structural, compositional, morphological and electrical properties of the CZTSSe thin films were studied using XRD (X-ray diffraction), XRF (X-ray fluorescence analysis), FE-SEM (field-emission scanning electron microscopy), respectively. The XRD, FE-SEM, XRF results indicated that the properties of sulfo-selenized CZTSSe thin films were strongly related to the S/Se composition ratio. In particular, the CZTS thin film solar cells with S/(S+Se)=0.25 shows best conversion efficiency of 4.6% ($V_{oc}$ : 348 mV, $J_{sc}$ : $26.71mA/cm^2$, FF : 50%, and active area : $0.31cm^2$). Further detailed analysis and discussion for effect of S/Se composition ratio on the properties CZTSSe thin films will be discussed.

• 한국표면공학회지
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• 제47권4호
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• pp.198-203
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• 2014

ZnO nanorods have been deposited on ITO glass by electrodeposition method. The optimization of two process parameters (precursor concentration and current) has been studied in order to control the orientation, morphology, and optical property of the ZnO nanorods. The structural and optical properties of ZnO nanorods were systematically investigated by using field-emission scanning electron microscopy, X-ray diffractometer, and photoluminescence. Commonly, the results show that ZnO nanorods with a hexagonal form and wurtzite crystal structure have a c-axis orientation and higher intensity for the ZnO (002) diffraction peaks. Both high precursor concentration and high electrodeposition current cause the increase in nanorods diameter and coverage ratio. ZnO nanorods show a strong UV (3.28 eV) and a weak visible (1.9 ~ 2.4 eV) bands.