• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.494-497
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• 2002

In this paper, we have presented the simulation results about threshold voltage of nano scale lightly doped drain (LDD) MOSFET with halo doping profile. Device size is scaled down from 100nm to 40nm using generalized scaling. We have investigated the threshold voltage for constant field scaling and constant voltage scaling using the Van Dort Quantum Correction Model(QM) and direct tunneling current for each gate oxide thickness. We know that threshold voltage is decreasing in the constant field scaling and increasing in the constant voltage scaling when gate length is reducing, and direct tunneling current is increasing when gate oxide thickness is reducing. To minimize the roll-off characteristics for threshold voltage of MOSFET with decreasing channel length, we know u value must be nearly 1 in the generalized scaling.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.05a
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• pp.275-278
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• 2002

As the gate lengths of MOSFETs are scaled down to sub-50nm regime, there are key issues to be considered in the device design. In this paper, we have investigated the characteristics of threshold voltage for MOSFET device. We have simulated the MOSFETs with gate lengths from 100nm to 30nm using generalized scaling. Then, we have known the device scaling limits for nano structure MOSFET. We have determined the threshold voltages using LE(Linear Extraction) method.

• Structural Engineering and Mechanics
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• v.77 no.3
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• pp.305-314
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• 2021

In order to reduce enormous cost of real-scale underwater explosion experiments on ships, the mechanical response of the ships have been analyzed by combining scaled-down experiments and Hopkinson's scaling law. However, the Hopkinson's scaling law is applicable only if all variables vary in an identical ratio; for example, thickness of ship, size of explosive, and distance between the explosive and the ship should vary with same ratio. Unfortunately, it is infeasible to meet such uniform scaling requirement because of environmental conditions and limitations in manufacturing scaled model systems. For the facile application of the scaling analysis, we propose a generalized scaling law that is applicable for non-uniform scaling cases in which different parts of the experiments are scaled in different ratios compared to the real-scale experiments. In order to establish such a generalized scaling law, we conducted a parametric study based on numerical simulations, and validated it with experiments and simulations. This study confirms that the initial peak value of response variables in a real-scale experiment can be predicted even when we perform a scaled experiment composed of different scaling ratios for each experimental variable.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.4
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• pp.719-724
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• 2003

In this paper, we have presented the simulation results about threshold voltage of nano scale lightly doped drain (LDD) MOSFET with halo doping profile. Device size is scaled down from 100nm to 40nm using generalized scaling. We have investigated the threshold voltage for constant field scaling and constant voltage scaling using the Van Dort Quantum Correction Model (QM) and direct tunneling current for each gate oxide thickness. We know that threshold voltage is decreasing in the constant field scaling and increasing in the constant voltage scaling when gate length is reducing, and direct tunneling current is increasing when gate oxide thickness is reducing. To minimize the roll off characteristics for threshold voltage of MOSFET with decreasing channel length, we know $\alpha$ value must be nearly 1 in the generalized scaling.

• Journal of the Korean Operations Research and Management Science Society
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• v.28 no.4
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• pp.191-198
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• 2003

The generalized knapsack problem or gknap is the combinatorial optimization problem of optimizing a nonnegative linear function over the integral hull of the intersection of a polynomially separable 0-1 polytope and a knapsack constraint. The knapsack, the restricted shortest path, and the constrained spanning tree problem are a partial list of gknap. More interesting1y, all the problem that are known to have a fully polynomial approximation scheme, or FPTAS are gknap. We establish some necessary and sufficient conditions for a gknap to admit an FPTAS. To do so, we recapture the standard scaling and approximate binary search techniques in the framework of gknap. This also enables us to find a weaker sufficient condition than the strong NP-hardness that a gknap does not have an FPTAS. Finally, we apply the conditions to explore the fully polynomial approximability of the constrained spanning problem whose fully polynomial approximability is still open.

• International Journal of CAD/CAM
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• v.3 no.1_2
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• pp.77-83
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• 2003

We propose two algorithms to generate (1) polygonal meshes and (2) developable surface patches far generalized cylinders defined by contours of discrete curves. To solve the contour blending problem of generalized cylinder, the presented algorithms have adopted the algorithm and related properties of LIDM (linear interpolation by direction map) that interpolate geometric shapes based on direction map merging and group scaling operations. Proposed methods are fast to compute and easy to implement.

• Korean Journal of Mathematics
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• v.26 no.3
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• pp.387-403
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• 2018

Shifting, scaling and modulation proprerties for the convolution product of the Fourier-Feynman transform of functionals in a generalized Fresnel class ${\mathcal{F}}_{A1,A2}$ are given. These properties help us to obtain convolution product of new functionals from the convolution product of old functionals which we know their convolution product.

• Korean Journal of Mathematics
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• v.25 no.3
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• pp.335-347
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• 2017

Time shifting and frequency shifting proprerties for the Fourier-Feynman transform of functionals in a generalized Fresnel class ${\mathcal{F}}_{A_1,A_2}$ are given. We discuss scaling and modulation proprerties for the Fourier-Feynman transform. These properties help us to obtain Fourier-Feynman transforms of new functionals from the Fourier-Feynman transforms of old functionals which we know their Fourier-Feynman transforms.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.29 no.2
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• pp.162-167
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• 1993

We have investigated analytically and numerically on both the generalized dimension D sub(n) and the fractal dimensionality f sub($\alpha$) in the dissipative Willbrink map. and discussed both the mode-locking phenomenon and the dissipative trajectory when z=0.03, b=0.9 and K sub(d) =0.272313668. In the mode-locking phenomenon. we find that the generalized dimension D sub(-n) and superconverged $\delta$ sub(n) are very close to D sub(-$\infty$) =0.92403 and $\delta$ sub($\infty$) =2.16442 even for n～20 as listed in Table 1. In dissipative trajectory, the values of D sub(+n) and D sub(-n) for n～20 are estimated to be very close to D sub(+$\infty$) =0.63267 and D sub(-$\infty$) =1.89802 on the circle map. Thus, the values of the generalized dimension as nlongrightarrow$\infty$ on dissipative Willbrink map are expected to be the same results as those for the circle map and to have the universal scaling exponents for a special scaling structure when the values of overbar(w), z, b, and k sub(d) have the different values.

• Journal of Periodontal and Implant Science
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• v.9 no.1
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• pp.34.2-34.2
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• 1979