• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.10
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• pp.1664-1671
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• 2016

This paper presents the analysis of the gate-source voltage of the gallium nitride high electronic mobility transistor (GaN HEMT) in the half bridge structure focused on the mutual effects of two switching operation. Especially low side gate-source voltage is analyzed mathematically according to the high side switch turn-on and turn-off operation. Moreover, the influence of each gate resistance and parasitic component on the switching characteristic of other side switch is investigated, and the formula, simulation and experimental results are compared with theoretical data.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.53 no.6
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• pp.359-367
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• 2004

The switched reluctance motor(SRM) has considerable potential for industrial applications because of its high result lily as a result of the absence of rotor windings. In some applications with SRM, paralleling strategy is often used for cost saving, increasing of current capacity and system reliability. A SRM inverter has very low ,switching frequency. This results in reducing the burden for a high-speed of the gate-amp interface circuit. and the linearity of optocoupler is used to protect the instantaneous peak current for the stable operation. In this paper, series resistor is used to equal the current sharing of each switching device and a linear gate-amp is proposed to protect the instantaneous peak current which occurs in transient state. The proposed paralleling strategy is verified by experimental results.

• Proceedings of the KIPE Conference
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• 2017.07a
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• pp.598-599
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• 2017

In motor application, High efficiency is important. So Design engineer select small gate resistor for lower switching. But There is side effect with small gate resistor. It makes large dv/dt and system request large EMI filter. It makes price increase. This paper introduce about gate drive IC which have solution both of lower loss and EMI issue.

• Journal of Power Electronics
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• v.10 no.4
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• pp.342-350
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• 2010

Randomizing the switching frequency (RSF) to reduce the electromagnetic interference (EMI) of switching power converters is a well-known technique that has been previously discussed. The randomized pulse position (RPP) technique, in which the switching frequency is kept fixed while the pulse position (the delay from the starting of the switching cycle to the turn-on instant within the cycle) is randomized, has been previously addressed in the literature for the same purpose. This paper presents a double-hybrid technique (DHB) for EMI reduction in dc-dc switching regulators. The proposed technique employed both the RSF and the RPP techniques. To effectively spread the conducted-noise frequency spectrum and at the same time attain a satisfactory output voltage quality, two parameters (switching frequency and pulse position) were randomized, and a third parameter (the duty ratio) was controlled by a digital compensator. Implementation was achieved using field programmable gate array (FPGA) technology, which is increasingly being adopted in industrial electronic applications. To evaluate the contribution of the proposed DHB technique, investigations were carried out for each basic PWM, RPP, RSF, and DHB technique. Then a comparison was made of the performances achieved. The experimentally investigated features include the effect of each technique on the common-mode, differential-mode, and total conducted-noise characteristics, and their influence on the converter’s output ripple voltage.

• Proceedings of the KIEE Conference
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• 1990.11a
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• pp.110-114
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• 1990

Double Injection Switching Devices consist of $P^+$ and $n^+$ contact separated by a near intrinsic Semiconductor region containing deep trap. A V-Groove Double Injection Switching Devices were proposed for high voltage performance and Optical gating scheme. The experimental result to demonstrate the feasibility of these devices (Planar type, V-Groove type, Injection Gate mode, Optical Gate mode) for practical application are described.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.236-241
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• 2001

This paper presents a novel prototype of active voltage-clamping capacitor-assisted edge resonant soft switching PWM inverter operating at a constant frequency variable power (VPCF) regulation scheme, which is suitable for consumer high-power induction-heating cooking appliances. New generation IGBT with a trench gate is particularly improved in order to reduce conduction loss due to its lowered saturation voltage characteristics. The soft switching load resonant and quasi-resonant inverter designed distinctively using the latest IGBTs is evaluated from an experimental point of view.

• Proceedings of the KIPE Conference
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• 1998.07a
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• pp.323-327
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• 1998

Under high power IGBTs Switching, a large overvoltage is induced across the IGBT module due to the stray inductance in the circuit. This paper proposes a new gate drive circuit for high power IGBTs which can actively suppress the overvoltage across the driven IGBT at turn-off while preserving the most simple and reliable power circuit. The turn-off driving scheme has adaptive feature to the amplitude of collector current, so that the overvoltage can be limited much effectively at the fault collector current. Experimental results under various normal and fault conditions prove the effectiveness of the proposed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.3
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• pp.272-278
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• 2008

This paper investigated the a-si:H gate driver with the stepwise gate signal. In 1-chip type mobile LCD application the stepwise gate signal for low power consumption can be used by adding simple switching circuit. The power consumption of the a-Si:H gate driver can be decreased by employing the stepwise gate signal in the conventional circuit. In conventional one, the effect of stepwise gate signal can decrease slew rate and increase the fluctuation of gate-off state voltage, In order to increase the slew rate and decrease the gate off state fluctuation, we proposed a new a-Si:H TFT gate driver circuit. The simulation data of the new circuit show that the slew rate and the gate-off state fluctuation are improved, so the circuit can work reliably.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.7
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• pp.39-46
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• 2009

A fast-switching current-pulse driver for light emitting diode (LED) backlight is proposed. It uses a regulated drain current mirror (RD-CM) [1] and a high-voltage NMOS transistor (HV-NMOS). It achieves the fast-response current-pulse switching by using a dynamic gain-boosting amplifier (DGB-AMP). The DGB-AMP does not discharge the large HV-NMOS gate capacitance of the RD-CM when the output current switch turns off. Therefore, it does not need to charge the HV-NMOS gate capacitance when the switch turns on. The proposed current-pulse driver achieves the fast current switching by removing the repetitive gate discharging and charging. Simulation results were verified with measurements performed on a fabricated chip using a 5V/40V 0.5um BCD process. It reduces the switching delay to 360ns from 700ns of the conventional current-pulse driver.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.549-556
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• 2014

This paper proposes a highly power-efficient single-inductor multiple-outputs (SIMO) DC-DC converter with a gate charge sharing method in which gate charges of output switches are shared to improve the power efficiency and to reduce the switching power loss. The proposed converter was fabricated by using a $0.18{\mu}m$ CMOS process technology with high voltage devices of 5 V. The input voltage range of the converter is from 2.8 V to 4.2 V, which is based on a single cell lithium-ion battery, and the output voltages are 1.0 V, 1.2 V, 1.8 V, 2.5 V, and 3.3 V. Using the proposed gate charge sharing method, the maximum power efficiency is measured to be 87.2% at the total output current of 450 mA. The measured power efficiency improved by 2.1% compared with that of the SIMO DC-DC converter without the proposed gate charge sharing method.