• Korean Journal of Optics and Photonics
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• v.23 no.4
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• pp.143-146
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• 2012

All-optical data extraction, one of the key technologies for all-optical computing and optical communication to perform add-drop, packet switching, and data reset, etc., is experimentally demonstrated by using cross-gain modulation (XGM) of semiconductor optical amplifiers (SOAs). Also, all-optical data extraction based on numerical simulation is performed by using the VPI simulation tool. In this paper, the suggested optical system based on SOAs shows the potential for high speed, and highly integrable and low power optical data computing.

• The Transactions of the Korean Institute of Power Electronics
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• v.20 no.3
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• pp.214-222
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• 2015

The superiority of gallium nitride FET (GaN FET) over silicon MOSFET is examined in this paper. One of the outstanding features of GaN FET is low reverse-recovery charge, which enables continuous conduction mode operation of totem-pole bridgeless boost power factor correction (PFC) circuit. Among many bridgeless topologies, totem-pole bridgeless shows high efficiency and low conducted electromagnetic interference performance, with low cost and simple control scheme. The operation principle, control scheme, and circuit implementation of the proposed topology are provided. The converter is driven in two-module interleaved topology to operate at a power level of 5.5 kW, whereas phase-shedding control is adopted for light load efficiency improvement. Negative bias circuit is used in gate drivers to avoid the shoot-through induced by high speed switching. The superiority of GaN FET is verified by constructing a 5.5 kW prototype of two-module interleaved totem-pole bridgeless boost PFC converter. The experiment results show the highest efficiency of 98.7% at 1.6 kW load and an efficiency of 97.7% at the rated load.

• Journal of Power Electronics
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• v.17 no.1
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• pp.56-66
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• 2017

Fast and accurate fault detection is the primary step and one of the most important tasks in fault tolerant converters. In this paper, a fast and simple method is proposed to detect and diagnosis the faulty cell in a cascaded H-bridge multilevel inverter under a short circuit fault. In this method, the reference voltage is calculated using switching control pulses and DC-Link voltages. The comparison result of the output voltage and the reference voltage is used in conjunction with active cell pulses to detect the faulty cell. To achieve this goal, the cell which is active when the Fault signal turns to "0" is detected as the faulty cell. Furthermore, consideration of generating the active cell pulses is completely described. Since the main advantage of this method is its simplicity, it can be easily implemented in a programmable digital device. Experimental results obtained with an 11-level inverter prototype confirm the effectiveness of the proposed fault detection technique. In addition, they show that the diagnosis method is unaffected by variations of the modulation index.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.1
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• pp.70-79
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• 2016

This paper proposes a low-power range-scaled 14b 30 MS/s pipeline-SAR composite ADC for high-performance CIS applications. The SAR ADC is employed in the first stage to alleviate a sampling-time mismatch as observed in the conventional SHA-free architecture. A range-scaling technique processes a wide input range of 3.0VP-P without thick-gate-oxide transistors under a 1.8 V supply voltage. The first- and second-stage MDACs share a single amplifier to reduce power consumption and chip area. Moreover, two separate reference voltage drivers for the first-stage SAR ADC and the remaining pipeline stages reduce a reference voltage disturbance caused by the high-speed switching noise from the SAR ADC. The measured DNL and INL of the prototype ADC in a $0.18{\mu}m$ CMOS are within 0.88 LSB and 3.28 LSB, respectively. The ADC shows a maximum SNDR of 65.4 dB and SFDR of 78.9 dB at 30 MS/s, respectively. The ADC with an active die area of $1.43mm^2$ consumes 20.5 mW at a 1.8 V supply voltage and 30 MS/s, which corresponds to a figure-of-merit (FOM) of 0.45 pJ/conversion-step.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.11
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• pp.27-32
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• 1999

Metal-ferroelectric-semiconductor devices by susing rapid thermal annealed $LiNbO_3/Si$(100) structures were fabricated and demonstrated nonvolatile memory operations. The estimated field-effect electron mobility and transconductance on a linear region of the fabricated FET were about $600cm^2/V{\cdot}s$ and 0.16mS/mm, respectively. The ID-VG characteristics of MFSFET's showed a hysteresis loop due to the ferroelectric nature of the $LiNbO_3 films. The drain current of the on state was more than 4 orders of magnitude larger than the off state current at the same read gate voltage of 0.5V, which means the memory operation of the MFSFET. A write voltage as low as ${\pm}3V$, which is applicable to low power integrated circuits, was used for polarization reversal. The ferroelectric capacitors showed no polarization degradation up to $10^{10}$ switching cycles with the application of symmetric bipolar voltage pulse (peak-to-peak 6V, 50% duty cycle) of 500kHz.

• Journal of IKEEE
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• v.14 no.1
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• pp.55-64
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• 2010

In this paper, we proposed the novel TIGBT with an additional p-type MOS structure to achieve the improved trade-off between turn-off and on-state voltage drop(Vce(sat)). These low on-resistance and the fast switching characteristics of the proposed TIGBT are caused by an enhanced electron current injection efficiency which is caused by additional p-type MOS structure. In the simulation result, the proposed TIGBT has the lower on state voltage of 1.67V and the shorter turn-off time of 3.1us than those of the conventional TIGBT(2.25V, 3.4us).

• The Journal of Korean Institute of Communications and Information Sciences
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• v.24 no.10A
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• pp.1546-1554
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• 1999

In this paper, Dynamic Fault Tree algorithm(DFT algorithm) is presented. This algorithm provides a concise representation of dynamic fault tolerance system including fault recovery techniques with fault detection, mask and switching function. And this algorithm define FDEP, CSP, SEQ, PAG gate which captures the dynamic characteristics of system. It show that this algorithm solved the constraints to satisfy the dynamic characteristics of system which there are in Markov and also this is able to satisfy the dynamic characteristics of system which there are in Markov and also this is able to covered the disadvantage of Fault tree methods. To show the key advantage of this algorithm, a traditional method, that is, Markov and Fault Tree, applies to TMR and Dual-Duplex systems with the dynamic characteristic and a presented method applies to those. He results proved that the DFT algorithm for solving the problems of the system is more effective than the Markov and Fault tree analysis model..

• Macromolecular Research
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• v.17 no.7
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• pp.491-498
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• 2009

New $\pi$-conjugated multi-branched molecules were synthesized through the Homer-Emmons reaction using alkyl-substituted, 3,4-ethylenedioxythiophene-based, thiophenyl aldehydes and octaethyl benzene-l,2,4,5-tetrayltetrakis(methylene) tetraphosphonate as the core unit; these molecules have all been fully characterized. The two multi-branched conjugated molecules exhibited excellent solubility in common organic solvents and good self-film forming properties. The semiconducting properties of these multi-branched molecules were also evaluated in organic field-effect transistors (OFET). With octyltrichlorosilane (OTS) treatment of the surface of the $SiO_2$ gate insulator, two of the crystalline conjugated molecules, 7 and 8, exhibited carrier mobilities as high as $2.4({\pm}0.5){\times}10^{-3}$ and $1.3({\pm}0.5){\times}10^{-3}cm^2V^{-1}s^{-1}$, respectively. The mobility enhancement of OFET by light irradiation ($\lambda$ = 436 nm) supported the promising photo-controlled switching behavior for the drain current of the device.

• Journal of Magnetics
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• v.15 no.4
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• pp.213-220
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• 2010

Since the hypothalamus immediately reacts to a nerve by processing all the information from the human body and the external stimulus being conducted, it performs a significant role in internal secretion; thus, a diverse and rapid stimulus pulse is required. By detecting Zero Detector accurately via the application of AVR on-Chip (ATMEL) using commercial electricity, chopping generates a stimulus pulse to the brain using an IGBT gate to designate a new magnetic stimulation following treatment and diagnosis. To simplify and generate a diverse range of stimuli for the brain, chopping can be used as a free magnetic stimulator. Then, commercial frequency (60Hz) is chopped precisely at the first level of the leakage transformer to deliver an appropriate stimulus pulse towards the hypothalamus when necessary. Discharge becomes stable, and the chopping frequency and duty-ratio provide variety after authorizing a high-pressure chopping voltage at the second level of the magnetic stimulator. These methods have several aims. The first is to apply a variable stimulus pulse via accurate switching frequency control by a voltaic pulse or a pulse repetition rate, according to the diagnostic purpose for a given hypothalamus. Consequently, the efficiency tends to increase. This experiment was conducted at a maximum of 210 W, a magnetic induced amplitude of 0.1~2.5 Tesla, a pulse duration of $200{\sim}350\;{\mu}s$, magnetic inducement of 5 Hz, stimulus frequency of 0.1~60 Hz, and a duration of stimulus train of 1~10 sec.

• Journal of IKEEE
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• v.15 no.4
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• pp.330-338
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• 2011

In this paper, a current-mode buck-boost converter using Multiple switching devices is presented. The efficiency of the proposed converter is higher than that of conventional buck-boost converter. In order to improve the power efficiency at the high current level, the proposed converter is controlled with PWM(pulse width modulation) method. The converter has maximum output current 300mA, input voltage 3.3V, output voltage from 700mV to 12V, 1.5MHz oscillation frequency, and maximum efficiency 90%. Moreover, this paper proposes watchdog circuits in order to ensure the reliability and to improve the performance of dc-dc converters. An electrostatic discharge(ESD) protection circuit for deep submicron CMOS technology is presented. The proposed circuit has low triggering voltage using gate-substrate biasing techniques. Simulated result shows that the proposed ESD protection circuit has lower triggering voltage(4.1V) than that of conventional ggNMOS(8.2V).