• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• 제3B권1호
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• pp.37-43
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• 2003

This paper proposes a soft-switching current source inverter for a photovoltaic power system. The proposed inverter has an H-type switched-capacitor module composed of two semiconductor switches, two diodes, and an LC resonant circuit. The operation of the proposed system was analyzed by a theoretical approach with equivalent circuits and was verified by computer simulations with SPICE and experimental implementation with a hardware prototype. The proposed system could be effectively applied for the power converter of photovoltaic power system interconnected with the AC power system.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 학술대회 논문집 전문대학교육위원
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• pp.158-161
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• 2003

A new soft switching technique that improves performance of the high power factor boost rectifier by reducing switching losses is introduced. The losses are reduced by air active snubber which consists of an inductor, a capacitor a rectifier, and an auxiliary switch. Since the boost switch turns off with zero current, this technique is well suited for implementations with insulated gate bipolar transistors. The reverse recovery related losses of the rectifier are also reduced by the snubber inductor which is connected in series with the boost switch and the boost rectifier. In addition, the auxiliary switch operates with zero voltage switching. A complete design procedure and extensive performance evaluation of the proposed active snubber using a 1.2[kW] high power factor boost rectifier operating from a $90[V_{rms}]$ input are also presented.

• 전기전자학회논문지
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• 제17권3호
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• pp.365-370
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• 2013

Power MOSFET is developed in power savings, high efficiency, small size, high reliability, fast switching, and low noise. Power MOSFET can be used in high-speed switching transistors devices. Recently attention given to the motor and the application of various technologies. Power MOSFET is a voltage-driven approach switching device and designed to handle on large power, power supplies, converters, motor controllers. In this paper, the 400 V Planar type, and the trench type for realization of low on-resistance are designed. Trench Gate Power MOSFET Vth : 3.25 V BV : 484 V Ron : 0.0395 Ohm has been optimized.

• 한국전기전자재료학회논문지
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• 제13권2호
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• pp.120-124
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• 2000

In this paper, the effects of trap distribution on switching characteristis of a lateral insulated gate bipolar transistor (LIGBT) are investigated. The simulations are performed in order to to analyze the effect of the positon, width and concentration of trap distribution model with a reduced minority carrier lifetime using 2D device simulator MEDICI. The turn off time for the proposed LIGBT model A with the trap injection is 0.8$mutextrm{s}$. These results indicate the improvement of about 2 times compared with the conventional LIGBT. It is shown that the trap distribution model is very effective to reduce the turn-off time with a little increasing of on-state voltage drop.

• Journal of Power Electronics
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• 제16권1호
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• pp.121-132
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• 2016

In this paper, high-efficiency design methodology of a zero-voltage-switching full-bridge (ZVS-FB) pulse width modulation (PWM) converter for server-computer power supply is discussed based on self-driven synchronous rectifier (SR) performance. The design approach focuses on rectifier conduction loss on the secondary side because of high output current application. Various-number parallel-connected SRs are evaluated to reduce high conduction loss. For this approach, the reliability of gate control signals produced from a self-driver is analyzed in detail to determine whether the converter achieves high efficiency. A laboratory prototype that operates at 80 kHz and rated 1 kW/12 V is built for various-number parallel combination of SRs to verify the proposed theoretical analysis and evaluations. Measurement results show that the best efficiency of the converter is 95.16%.

• 전력전자학회논문지
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• 제24권6호
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• pp.459-462
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• 2019

This work presents methods for reducing overshoot voltages across the drain-source of silicon carbide (SiC) MOSFETs in grid-connected hybrid active neutral-point-clamped (ANPC) inverters. Compared with 3-level NPC-type inverter, the hybrid ANPC inverter can realize the high efficiency. However, SiC MOSFETs conduct its switching operation at high frequencies, which cause high overshoot voltages in such devices. These overshoot voltages should be reduced because they may damage switching devices and result in electromagnetic interference (EMI). Two major strategies are used to reduce the overshoot voltages, namely, adjusting the gate resistor and using a snubber capacitor. In this paper, advantages and disadvantages of these methods will be discussed. The effectiveness of these strategies is verified by experimental results.

• Journal of Electrical Engineering and Technology
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• 제12권5호
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• pp.1805-1811
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• 2017

Recently, DC systems are considered as efficient electric power systems for renewable energy based clean power generators. This discloses several critical issues that are required to be considered before the installation of the DC systems. First of all, voltage/current switching stress, which is aggravated by large fault current, might damage DC circuit breakers. This problem can be simply solved by applying a superconducting fault current limiter (SFCL) as proposed in this study. It allows a simple use of insulated-gate bipolar transistors (IGBTs) as a DC circuit breaker. To evaluate the proposed resistive type SFCL application to the DC circuit breaker, a DC distribution system is composed of the practical line impedances from the real distribution system in Do-gok area, Korea. Also, to reflect the distributed generation (DG) effects, several DC-to-DC converters are applied. The locations and sizes of the DGs are optimally selected according to the results of previous studies on DG optimization. The performance of the resistive type SFCL applied DC circuit breaker is verified by a time-domain simulation based case study using the power systems computer aided design/electromagnetic transients including DC (PSCAD/ EMTDC(R)).

• 한국통신학회논문지
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• 제27권11C호
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• pp.1171-1177
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• 2002

본 논문에서는 ATM(Asynchronous Transfer Mode) 기반 레이블 에지 라우터에서 POS(Packet over SONET) 정합 기능을 가지는 고속의 IP(Internet Protocol) 패킷 포워딩 엔진을 제안하였다. 포워딩 엔진은 POS 물리층으로부터 수신되는 패킷에 대하여 TCAM(Ternary Content Addressable Memory)을 사용하여 고속의 룩업 처리가 가능하도록 하였다. 또한, 고속의 IP 헤더 처리 및 룩업 제어 기능을 FPGA(Field Programmable Gate Array)로 구현하여 하드웨어적으로 고속의 IP 패킷 포워딩이 가능하도록 하였다. 제안한 포워딩 엔진은 룩업 제어기에 MPLS(Multiprotocol Label Switching) 패킷 처리 기능을 구현함으로써 레이블 에지 라우터 기능도 수행하도록 하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1816-1819
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• 2002

Nowadays, CO2 lasers are used widely in many applications such as materials fabrication, communications, remote sensing and military purpose etc. It is important to control the laser output power in those fields. In this paper, current resonant half-bridge inverter and Cockcraft-Walton circuit are used to vary the laser output power. This laser power supply is designed and fabricated which has less switching losses and compact size. Also we used an IGBT(Insulated Gate Bipolar Transistor) as a switching device of a power supply and PIC one-chip microprocessor are used to control the gate signal of the IGBT precisely. We investigated the output characteristics of this CO2 laser. As a result, the maximum laser output power of 26[W] is obtained at the resonant frequency of about 13[kHz].

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계합동학술대회 논문집
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• pp.176-179
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• 2002

Nowadays, CO2 lasers are used widely in many applications such as materials fabrication. communications, remote sensing and military purpose etc. It is important to control the laser output power in those fields. In this paper, current resonant half-bridge inverter and Cockcraft-Walton circuit are used to vary the laser output power. This laser power supply is designed and fabricated which has less switching losses and compact size. Also we used an IGBT(insulated Gate Bipolar Transistor) as a switching device of a power supply and PIC one-chip microprocessor are used to control the gate signal of the IGBT precisely. We investigated the output characteristics of this CO2 laser. As a result. the maximum laser output power of 26 [W] is obtained at the resonant frequency of about 13 [kHz].