• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.131-132
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• 2007

An AlGaN/GaN high electron mobility transistor(HEMT) was fabricated and the effect of photoelectrochemical oxidation of AlGaN/GaN surface was investigated. The oxidation of AlGaN surface was done in water at the bias of 10 V under the deep UV light illumination. The sheet resistance of the AlGaN/GaN structure was increased and gate leakage current of the HEMT was decreased by the oxidation. However, the transconductance of the HEMT was not degraded by the oxidation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.144-147
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• 2003

Cu+ ions drift diffusion in formal oxide film and SiOCH film for interlayer dielectric is evaluated. The diffusion is investigated by measuring shift in the flatband voltage of capacitance/voltage measurements on Cu gate capacitors after bias temperature stressing. At a field of 0.2MV/cm and temperature $200^{\circ}C,\;300^{\circ}C,\;400^{\circ}C,\;500^{\circ}C$ for 10min, 30min, 60min. The Cu+ ions drift rate of $SiOCH(k=2.85{\pm}0.03)$ film is considerable lower than termal oxide. As a result of the experiment, SiOCH film is higher than Thermal oxide film for Cu+ drift diffusion resistance. The important conclusion is that SiOCH film will solve a causing reliability problems aganist Cu+ drift diffuion in dielectric materials.

• Transactions on Electrical and Electronic Materials
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• v.12 no.6
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• pp.245-248
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• 2011

The scaling down of metal oxide semiconductor field-effect transistors (MOSFETs) for the last several years has contributed to the reduction of the scaling variables and device parameters as well as the operating voltage of the MOSFET. At the same time, the variation in the electrical characteristics of MOSFETs is one of the major issues that need to be solved. Especially because the issue with variation is magnified as the drive voltage is decreased. Therefore, this paper will focus on the variations between electrical characteristics and drain voltage. In order to do this, the test patterned multi-finger MOSFETs using 90-nm process is used to investigate the characteristic variations, such as the threshold voltage, DIBL, subthreshold swing, transconductance and mobility via parasitic resistance extraction method. These characteristics can be analyzed by varying the gate width and length, and the number of fingers. Through this modeling scheme, the characteristic variations of multi-finger MOSFETs can be analyzed.

• Proceedings of the Korean Society of Crop Science Conference
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• 2022.10a
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• pp.194-194
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• 2022

Recently, food-induced allergies have emerged as major global concerns. In the past ten years, it has doubled in western nations, and it has also increased in Asia and Africa. In many cases of food allergy, peanut allergy is prevalent, typically permanent, and frequently life-threatening. Therefore, we utilized gene editing techniques on the three major allergen genes in peanuts, Ara h 1, Ara h 2, and Ara h 3. Using gibson assembly and golden gate assembly, we created two vectors, the gRNA-tRNA array CRISPR-Cas9 system and Prime-editing. Using LBA4404 strain and agrobacterium-mediated transformation, the vectors were transferred to two elite Korean peanut lines. After co-cultivation and tissue culture, we extracted the tissue cultured peanut DNA amplified the hygromycin resistance gene and Cas9 gene in the T-DNA region. The integration of the T-DNA region into the host genome was demonstrated by the presence of a specific band in some samples. There have only been a few reported peanut gene editing studies. So, this study will contribute to peanut allergy and gene editing research.

• Proceedings of the Korean Society of Crop Science Conference
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• 2022.10a
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• pp.200-200
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• 2022

Recently, food-induced allergies have emerged as major global concerns. In the past ten years, it has doubled in western nations, and it has also increased in Asia and Africa. In many cases of food allergy, peanut allergy is prevalent, typically permanent, and frequently life-threatening. Therefore, we utilized gene editing techniques on the three major allergen genes in peanuts, Ara h 1, Ara h 2, and Ara h 3. Using gibson assembly and golden gate assembly, we created two vectors, the gRNA-tRNA array CRISPR-Cas9 system and Prime-editing. Using LBA4404 strain and agrobacterium-mediated transformation, the vectors were transferred to two elite Korean peanut lines. After co-cultivation and tissue culture, we extracted the tissue cultured peanut DNA amplified the hygromycin resistance gene and Cas9 gene in the T-DNA region. The integration of the T-DNA region into the host genome was demonstrated by the presence of a specific band in some samples. There have only been a few reported peanut gene editing studies. So, this study will contribute to peanut allergy and gene editing research.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.4B
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• pp.365-371
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• 2002

In this paper, the fabricated power PHEMT devices for millimeter-wave that is below a gate-length of 0.2 $\mu\textrm{m}$ using electronic beam lithography technologies, and the DC and frequency characteristics and an output power characteristics were Measured at the various bias conditions. The unit process that is used in PHEMT's manufacture used that low-resistance ohmic contact, air-bridge and back-side lapping process technologies, and so on. The fabricated power PHEMT have an S521 gain of 4 dB and a maximum transconductance(gm) of 317 mS/mm, an unilateral current gain(fT) of 62 GHz, a maximum oscillation frequency(fmax) of 120 GHz at 35 GHz, and a maximum power output(Pmax) of 16 dBm, a power gain(GP) of 4 dB and a drain efficiency(DE) of 35.5 %.

• Journal of IKEEE
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• v.13 no.4
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• pp.23-27
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• 2009

Ohmic contact formation and etching processes for the fabrication of MBE (molecular beam epitaxy) grown GaSb-based p-channel HEMT devices on Si substrate have been studied. Firstly, mesa etching process was established for device isolation, based on both HF-based wet etching and ICP-based dry etching. Ohmic contact process for the source and drain formation was also studied based on Ge/Au/Ni/Au metal stack, which resulted in a contact resistance as low as $0.683\;{\Omega}mm$ with RTA at $320^{\circ}C$ for 60s. Finally, for gate formation of HEMT device, gate recess process was studied based on AZ300 developer and citric acid-based wet etching, in which the latter turned out to have high etching selectivity between GaSb and AlGaSb layers that were used as the cap and the barrier of the device, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.4
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• pp.271-274
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• 2013

Power Metal Oxide Semiconductor Field Effect Transistor's (MOSFETs) are well known for superior switching speed, and they require very little gate drive power because of the insulated gate. In these respects, power MOSFETs approach the characteristics of an "ideal switch". The main drawback is on-resistance RDS(on) and its strong positive temperature coefficient. While this process has been driven by market place competition with operating parameters determined by products, manufacturing technology innovations that have not necessarily followed such a consistent path have enabled it. This treatise briefly examines metal oxide semiconductor (MOS) device characteristics and elucidates important future issues which semiconductor technologists face as they attempt to continue the rate of progress to the identified terminus of the technology shrink path in about 2020. We could find at the electrical property as variation p base dose. Ultimately, its ON state voltage drop was enhanced also shrink chip size. To obtain an optimized parameter and design, we have simulated over 500 V Field ring using 8 Field rings. Field ring width was $3{\mu}m$ and P base dose was $1e15cm^2$. Also the numerical multiple $2.52cm^2$ was obtained which indicates the doping limit of the original device. We have simulated diffusion condition was split from $1,150^{\circ}C$ to $1,200^{\circ}C$. And then $1,150^{\circ}C$ diffusion time was best condition for break down voltage.

• Journal of IKEEE
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• v.12 no.2
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• pp.110-117
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• 2008

This paper presents a new Insulated Gate Bipolar Transistor(IGBT) based on Non Punch Through(NPT) IGBT structure for power switching device. The proposed structure has adding N+ beside the P-base region of the conventional IGBT structure. The added n+ diffusion of the proposed device ensure device has faster turn-off time and lower forward conduction loss than the conventional IGBT structure. But, added n+ region can reduce th breakdown voltage and latching current density of the proposed device due to its high doping concentration. This problems can be overcome by using diverter on the right side of the device. In the simulation results, turn-off time of the proposed device is 0.3us and the on-state voltage drop is 3V. The results show that the proposed device has superior characteristic than conventional structure.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.10a
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• pp.84-87
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• 2010

We manufacture an antifuse OTP (One-time programmable) cell for analog trimming which will be used in power management ICs. For the antifuse cell using dual program voltage of VPP (=7V) and VNN (=-5V), the thin gate oxide is broken down by applying a voltage higher than the hard break-down voltage to the terminals of the antifuse. The area of the manufactured antifuse OTP cell using $0.18{\mu}m$ BCD process is $48.01{\mu}m^2$ and is about 44.6 percent of that of an eFuse cell. The post-program resistances of the antifuse are good with the values under several kilo ohms when we measure twenty test patterns.