• 전력전자학회논문지
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• 제3권3호
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• pp.222-230
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• 1998

본 논문에서는 스너버 회로를 사용하지 않고 턴-온시 역회복 전류의 영향과 턴-오프 시 구동되는 IGBT에 발생하는 과전압을 제한할 수 있는 새로운 IGBT 게이트 구동회로를 제안한다. 제안하는 턴-온 게이트 구동기법은 턴-온 지연 시간을 증가시키지 않고 게이트-에이터 전압이 문턱전압 이상이 되면 IGBT의 입력 커패시턴스를 증가시킴으로써 게이트-에이터 전압의 증가율을 감소시키는 특징을 갖는다. 제안하는 턴-오프 게이트 구동기법은 전류의 크기에 따라 과전압을 제한하여 단락사고와 같은 대전류가 흐르는 경우 더욱 효과적으로 과전압을 제한하는 특징을 가진다. 또한, 여러 가지 조건에서 실험을 수행하여 제안한 IGBT 게이트 구동회로의 타당성을 검증한다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권6호
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• pp.267-273
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• 2003

The plasma display panel with the electrode structure of new discharge AND gate and its driving scheme were proposed and the driving system for experiment was developed. And operation of these discharge AND gate was verified by the experiment of PDP addressing with floating electrode. This discharge AND gate operated by the operation speed of 8$mutextrm{s}$ and the operation margin of 100V. The address operation margin of 10V also obtained. It was known to be able to control the discharge of the adjoining scan electrode accurately. Because proposed method uses the DC discharge the control of the discharge can be facilitated compared with conventional discharge AND gate. Moreover, because the input discharge and the output discharge of discharge gate are separate, the display discharge can be prevented from passing discharge gates. Therefore, it is possible to apply to the large screen plasma display panel. And the decrease of contrast ratio does not occur because the scanning discharge does not influence the picture quality.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.172-175
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• 2005

a-Si TFT는 TFT-LCD의 화소 스위칭(swiching) 소자로 폭넓게 이용되고 있다. 현재는 a-Si을 이용하여 gate drive IC를 기판에 집적하는 기술이 연구, 적용되고 있는데 이때 가장 큰 제약은 문턱 전압의 이동이다. 펄스(pulse)형태로 인가되는 gate 전압에 의한 문턱 전압 이동은 a-Si:H gate에 인가되는 펄스의 크기, duty cycle, drain pulse의 크기 및 동작 온도에 기인하며 실험결과를 통해 입증된다. 초기의 DC Stress 측정 Data를 이용하여 문턱전압이동을 모델링/시뮬레이션한 결과 a-Si:H gate 회로설계 및 펄스 조건에 따라 stress시간에 따른 gate의 출력 파형 예측이 가능하고 상온에서 Von=21V를 인가한 결과, 약 4년후에서 시프트레지스터 출력 파형이 열화되기 시작한다.

• 산업기술연구
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• 제27권B호
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• pp.15-20
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• 2007

This paper presents the new design method for the gate driver circuit of the floating MOSFET by using the pulse transformer. Each parameters of the proposed circuit are delivered by the numerical calculation method. By considering inner characteristics of MOSFET, the gate driver makes to increase the efficiency of the power conversion and decrease operating heat. Computer simulations and to experimental results for a Buck Converter are presented in order to validate the proposed method.

• JSTS:Journal of Semiconductor Technology and Science
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• 제9권2호
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• pp.110-116
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• 2009

The prominent advantages of Dual Material Surrounding Gate (DMSG) MOSFETs are higher speed, higher current drive, lower power consumption, enhanced short channel immunity and increased packing density, thus promising new opportunities for scaling and advanced design. In this Paper, we present Transconductance-to-drain current ratio and electric field distribution model for dual material surrounding gate (DMSGTs) MOSFETs. Transconductance-to-drain current ratio is a better criterion to access the performance of a device than the transconductance. This proposed model offers the basic designing guidance for dual material surrounding gate MOSFETs.

• Journal of Power Electronics
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• 제17권5호
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• pp.1382-1390
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• 2017

This paper presents a power supply for gate drivers, which uses a magnetic resonance wireless power transfer system. Unlike other methods where multiple antennas are used to supply power for the gate drivers, the proposed method uses a single antenna in an insulated receiver to make multiple mutually isolated power supplies. The power transmitted via single antenna is distributed to multiple power supplies for gate drivers through resonant capacitors connected in parallel that also block DC bias. This approach has many advantages over other methods, where each gate driver needs to be supplied with power using multiple receiver antennas. The proposed method will therefore lead to a reduction in production costs and circuit area. Because the proposed circuit uses a high resonance frequency of 6.78 MHz, it is possible to implement a transmitter and a receiver using a small-sized spiral printed-circuit-board-type antenna. This paper used a single phase-leg circuit configuration to experimentally verify the performance characteristics of the proposed method.

• International journal of advanced smart convergence
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• 제12권4호
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• pp.1-7
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• 2023

Large-size, organic light-emitting device (OLED) panels based on highly reliable gate driver circuits integrated using InGaZnO thin film transistors (TFTs) were developed to achieve ultra-high resolution TVs. These large-size OLED panels were driven by using a novel gate driver circuit not only for displaying images but also for sensing TFT characteristics for external compensation. Regardless of the negative threshold voltage of the TFTs, the proposed gate driver circuit in OLED panels functioned precisely, resulting from a decrease in the leakage current. The falling time of the circuit is approximately 0.9 ㎲, which is fast enough to drive 8K resolution OLED displays at 120 Hz. 120 Hz is most commonly used as the operating voltage because images consisting of 120 frames per second can be quickly shown on the display panel without any image sticking. The reliability tests showed that the lifetime of the proposed integrated gate driver is at least 100,000 h.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권2호
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• pp.73-77
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• 2000

A dual-gate SOI SA-LIGBT (shorted-anode lateral insulated gate bipolar transistor) which eliminates the snapback effectively is proposed and verified by numerical simulation. The elimination of the snapback in I-V characteristics is obtained by initiating the hole injection at low anode voltage by employing a dual gate and a floating electrode in the proposed device. For the proposed device, the snapback phenomenon is completely eliminate, while snapback of conventional SA-LIGBT occurs at anode voltage of 11 V. Also, the drive signals of two gates have same polarity by employing the floating electrode, thereby requiring no additional power supply.

• Journal of Electrical Engineering and Technology
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• 제9권4호
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• pp.1343-1348
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• 2014

The low frequency noise in Silicon Nanowire Field Effect Transistors is analyzed by characterizing the gate electrode dependence on various geometrical parameters. It shows that gate electrodes have a strong impact in the flicker noise of Silicon Nanowire Field effect transistors. Optimization of gate electrode was done by comparing different performance metrics such a DIBL, SS, $I_{on}/I_{off}$ and fringing capacitance using TCAD simulations. Molybdenum based gate electrode showed significant improvement in terms of high drive current, Low DIBL and high $I_{on}/I_{off}$. The noise power sepctral density is reduced by characterizing the device at higher frequencies. Silicon Nanowire with Si3N4 spacer decreases the drain current spectral density which interms reduces the fringing fields there by decreasing the flicker noise.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 B
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• pp.1304-1306
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• 1996

A regenerative signal amplifying gate driver of self-excited electronic ballast is presented. It can be used for high pressure sodium (HPS) lamp without auxiliary external ignitor. Since the HPS lamp requires very high ignition voltage at start up, the resonant frequency of the circuit must be increased to obtain high voltage oscillations in spite of relatively small resonant current. The presented gate driver amplifies the current of gate drive transformer and raises the gate-source voltage Quickly to turn on the MOSFET switches. Hence, the resonant frequency can be increased more than 100kHz. The HPS lamp used in the simulation and experiment has the rating of 400W input power at 220V input ac voltage source. The experiments show that the resonant frequency is above 150kHz at start up.