• 대한전자공학회논문지SD
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• 제47권2호
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• pp.32-39
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• 2010

기존의 셀 특성 분석은 다중 입력 변화를 고려하지 않고 셀 특성 분석을 수행한다. 다중 입력 변화가 시간적 근접성에 따라 게이트 지연 시간에 미치는 영향이 커지면서, 기존의 셀 특성 분석으로는 정확한 게이트 지연 시간을 예측하기가 어려워지게 되었다. 다중 입력 변화의 영향으로 인하여 게이트 지연 시간이 최대 46%까지 차이가 나는 것을 실험을 통하여 확인하였다. 본 논문에서는 다중 입력 변화의 시간적 근접성으로 인한 지연 시간 변화를 고려한 게이트 지연 시간 모델을 제안하였다. 제안된 모델은 Radial Basis Function (RBF)을 이용하여 지연 시간 변화량을 계산한다. 제안된 방법이 다중 입력 변화가 발생하였을 때, 보다 정확하게 게이트 지연 시간을 예측하는 것을 실험결과를 통하여 확인하였다.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2002년도 추계학술대회 발표 논문집
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• pp.130-136
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• 2002

Device makers want to make higher density chips as devices shrink, especially WSix poly stack down is one of the key issues. However, EPD (End Point Detection) time delay was happened in DPS+ poly chamber which is a barrier to achieve device shrink because EPD time delay killed test pattern and next generation device. To investigate the EPD time delay, a test was done with patterned wafers. This experimental was carried out combined with OES(Optical Emission Spectroscopy) and SEM (Scanning Electron Microscopy). OES was used to find corrected wavelength in WSix stack down gate etching. SEM was used to confirm WSix gate profile and gate oxide damage. Through the experiment, a new wavelength (252nm) line of plasma is selected for DPS+ chamber to call correct EPD in WSix stack down gate etching for current device and next generation device.

• 전자공학회논문지C
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• 제35C권1호
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• pp.1-9
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• 1998

In the circuit model that outputs are latched and input vectors are successively applied at inputs, the gate resizing approach to reduce the delay of the critical pathe may not improve the performance. Since the clock period is etermined by delays of both long and short paths in combinational circuits, the performance (clock period) can be optimized by decreasing the delay of the longest path, or increasing the delay of the shortest path. In order to achieve the desired clock period of a circuit, gates lying in sensitizable long and short paths can be selected for resizing. However, the gate selection in path sensitization approach is a difficult problem due to the fact that resizing a gate in shortest path may change the longest sensitizable path and viceversa. For feasible settings of the clock period, new algorithms and corresponding gate selection methods for resizing are proposed in this paper. Our new gate selection methods prevent the delay of the longest path from increasing while resizing a gate in the shortest path and prevent the delay of the shortest path from decreasing while resizing a gate in the longest sensitizable path. As a result, each resizing step is guaranteed not to increase the clock period. Our algorithmsare teted on ISCAS85 benchmark circuits and experimental results show that the clock period can beoptimized efficiently with out gate selection methods.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.723-726
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• 1998

Fault dropping is a very important part of test generation process. It is used to reduce test generation time. Test generation systems use fault simulation for the purpose of fault dropping by identifying detectable faults with generated test patterns. Two kinds of delay fault model is used in practice, path delay fault model and gate delay fault model. In this paper we propose an efficient method for gate delay test generation which shares second test vector.

• 전자공학회논문지C
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• 제36C권8호
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• pp.1-9
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• 1999

빠르고 정확한 결과를 얻기 위해서 타이밍 수준에서의 회로 해석이 이루어지며, 게이트와 연결선에서의 신호 지연 해석은 회로의 설계 검증을 위하여 필수적이다. 본 논문에서는 CMOS 회로 게이트에서의 지연 시간과 연결선의 지연 해석을 위한 초기 천이 시간을 동시에 계산할 수 있는 방법을 제시한다. 회로 연결선의 유효 커패시턴스 개념을 이용하여 게이트의 지연 시간과 게이트에서의 구동 저항을 고려한 연결선 선형 전압원의 천이 시간을 계산한다. 게이트 지연과 연결선 선형 전압원의 천이 시간을 구하는 과정은 예비 특성화된 게이트 타이밍 데이터를 이용하여 반복적인 연산과정을 통하여 동시에 구하게 된다. 기존의 게이트 지연 계산 알고리즘은 연결선 선형 전압원의 천이 시간을 위해 별도의 게이트 특성 데이터를 필요로 하였으나, 본 논문에서 제시하는 방법은 계산 과정 중에 생성된 데이터를 이용함으로써 현재의 예비 특성화 방법을 수정하지 않고서도 효율적인 타이밍 수준의 게이트 및 연결선 지연 시간 예측이 가능하도록 하였다.

• 한국정보기술응용학회:학술대회논문집
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• 한국정보기술응용학회 2005년도 6th 2005 International Conference on Computers, Communications and System
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• pp.99-102
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• 2005

In the paper, a proposed VCO based on bondwire inductances and nMOS varactors was implemented in a standard $0.25\;{\mu}m$ CMOS process. Using the new drain current model and a propagation delay time model equations, the operation speed of CMOS gate will predict the dependence on the load capacitance and the depth of oxide, threshold voltage, the supply voltage, the channel length. This paper describes the result of simulation which calculated a gate propagation delay time by using new drain current model and a propagation delay time model. At the result, When the reverse bias voltage on the substrate changes from 0 voltage to 3 voltage, the propagation delay time is appeared the delay from 0.8 nsec to 1 nsec. When the reverse voltage is biased on the substrate, for reducing the speed delay time, a supply voltage has to reduce. The $g_m$ value of MOSFET is calculated by using new drain current model.

• 한국전기전자재료학회논문지
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• 제18권3호
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• pp.206-211
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• 2005

The device makers want to make higher density chips on the wafer through scale-down. The change of WSix/poly-Si gate film thickness is one of the key issues under 100 nm device structure. As a new device etching process is applied, end point detection(EPD) time delay was occurred in DPS+ poly chamber of Applied Materials. This is a barrier of device shrink because EPD time delay made physical damage on the surface of gate oxide. To investigate the EPD time delay, the experimental test combined with OES(Optical Emission Spectroscopy) and SEM(Scanning Electron Microscopy) was performed using patterned wafers. As a result, a EPD delay time is reduced by a new chamber seasoning and a new wavelength line through plasma scan. Applying a new wavelength of 252 nm makes it successful to call corrected EPD in WSix/poly-Si stack-down gate etching in the DPS+ poly chamber for the current and next generation devices.

• 전자공학회논문지
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• 제51권7호
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• pp.71-81
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• 2014

본 논문에서는 삼차원 소자 시뮬레이터(Sentaurus)를 이용하여 tri-gate FinFET의 fin과 소스/드레인 구조의 변화에 따른 소자의 성능을 분석하였다. Fin의 구조가 사각형 구조에서 삼각형 구조로 변함에 따라, fin 단면의 전위 분포의 차이로 문턱 전압이 늘어나고, off-current가 72.23% 감소하고 gate 커패시턴스는 16.01% 감소하였다. 소스/드레인 epitaxy(epi) 구조 변화에 따른 성능을 분석하기 위해, epi를 fin 위에 성장시킨 경우(grown-on-fin)와 fin을 etch 시키고 성장시킨 경우(etched-fin)의 소자 성능을 비교했다. Fin과 소스/드레인 구조의 변화가 회로에 미치는 영향을 살펴보기 위해 Sentaurus의 mixed-mode 시뮬레이션 기능을 사용하여 3단 ring oscillator를 구현하여 시뮬레이션 하였고, energy-delay product를 계산하여 비교하였다. 삼각형 fin에 etched 소스/드레인 epi 구조의 소자가 가장 작은 ring oscillator delay와 energy-delay product을 보였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제10권2호
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• pp.134-142
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• 2010

A comparative study on the trade-off between the drive current and the total gate capacitance in double-gate (DG) and triple-gate (TG) FinFETs is performed by using 3-D device simulation. As the first result, we found that the optimum ratio of the hardmask oxide thickness ($T_{mask}$) to the sidewall oxide thickness ($T_{ox}$) is $T_{mask}/T_{ox}$=10/2 nm for the minimum logic delay ($\tau$) while $T_{mask}/T_{ox}$=5/1~2 nm for the maximum intrinsic gate capacitance coupling ratio (ICR) with the fixed channel length ($L_G$) and the fin width ($W_{fin}$) under the short channel effect criterion. It means that the TG FinFET is not under the optimal condition in terms of the circuit performance. Second, under optimized $T_{mask}/T_{ox}$, the propagation delay ($\tau$) decreases with the increasing fin height $H_{fin}$. It means that the FinFET-based logic circuit operation goes into the drive current-dominant regime rather than the input gate load capacitance-dominant regime as $H_{fin}$ increases. In the end, the sensitivity of $\Delta\tau/{\Delta}H_{fin}$ or ${{\Delta}I_{ON}}'/{\Delta}H_{fin}$ decreases as $L_G/W_{fin}$ is scaled-down. However, $W_{fin}$ should be carefully designed especially in circuits that are strongly influenced by the self-capacitance or a physical layout because the scaling of $W_{fin}$ is followed by the increase of the self-capacitance portion in the total load capacitance.

• 전자공학회논문지A
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• 제33A권3호
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• pp.82-88
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• 1996

A simpel formular is proposed for the analysis of gate delay of CMOS gate in the low V$_{GS}-V_{TH}$ scaling. The effects of magnitude of V$_{GS}-V_{TH}$ on gate delay can be readily found through the formula so that it can be used ot design the device parameters in the low V$_{DD}$ CMOS circuits. The measured sresutls confirm the usability of the proposed formula and quantifies the improtance of V$_{TH}$ effects on gate delay under low voltae operation. Applying the formula to the prototype NMOSFET devices representing the five generations of technology, the impacts of the V$_{GS}-V_{TH}$ on the various aspects of the circuit and device characteristics are investigated in a consistent manner.