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A Gate Delay Model Considering Temporal Proximity of Multiple Input Switching  

Shin, Jang-Hyuk (Department of Computer Science & engineering, Sogang University)
Kim, Ju-Ho (Department of Computer Science & engineering, Sogang University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.47, no.2, 2010 , pp. 32-39 More about this Journal
Abstract
Conventional cell characterization does not consider Multiple Input Switching(MIS). Since the impact of MIS on gate delay variation is large, it is not possible to predict the accurate gate delay with the conventional cell characterization. We observed the maximum 46% difference in gate delay due tn MIS. In this paper, we propose a gate delay model considering the delay variation caused by the temporal proximity of MIS. The proposed model calculates the delay variation using the Radial Basis Function. The experimental results show that the proposed method can more accurately predict the gate delay when MIS occurs.
Keywords
delay model; multiple input switching; temporal proximity; cell characterization;
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