• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.42 no.7 s.337
• /
• pp.5-12
• /
• 2005

The device performance of nano-scale center-channel (CC) double-gate (DG) MOSFET structure was investigated by numerically solving coupled Schr$\"{o}$dinger-Poisson and current continuity equations in a self-consistent manner. The CC operation and corresponding enhancement of current drive and transconductance of CC-NMOS are confirmed by comparing with the results of DG-NMOS which are performed under the condition of 10-80 nm gate length. Device optimization was theoretically performed in order to minimize the short-channel effects in terms of subthreshold swing, threshold voltage roll-off, and drain-induced barrier lowering. The simulation results indicate that DG-MOSFET structure including CC-NMOS is a promising candidates and quantum-mechanical modeling and simulation calculating the coupled Schr$\"{o}$dinger-Poisson and current continuity equations self-consistently are necessary for the application to sub-40 nm MOSFET technology.

• Journal of the Korean Magnetics Society
• /
• v.11 no.3
• /
• pp.134-140
• /
• 2001

Flux-gate magnetometer was developed in 1930's, and it has been widely used for the low magnetic field measurements. In this work, we have employed amorphous ribbon 2714A produced by Allied Chem. Co. as sensor core material. To develop low noise, low power consumption, and high reliability flux-gate magnetometer, we have measured ac magnetic properties depending on the annealing conditions. As quenched state amorphous core shows high noise level and ac magnetic properties were changed under the condition of accelerated aging test, but amorphous ribbon, which was annealed under 350 $\^{C}$ during 1 hour, shows low noise level of 0.1 nT in the frequency range of dc∼10 Hz which was 10 times better than the as quenched amorphous ribbon. Under accelerated aging test, ac magnetic properties such as squareness and coercivity of the annealed samples show higher reliability and approached to a certain limiting value as exponential function. We can see that high reliability and low noise flux-gate magnetometer could be developed, if we consider this ac magnetic properties change in the sensor design.

• Journal of the Korean Society of Marine Environment & Safety
• /
• v.2 no.1
• /
• pp.57-65
• /
• 1996

The latest date, No. 1 YouII was grounded and sunk into the sea at MAMHYUNGJEDO ( South brother Island) in Sep. 21. 1995, and M.V. Sea Prince of V.L.C.C also made a big oil poullution accident owing to Typhoon "Paei" at front sea of Yeu Choun on Jul. 25. 1995. The large or small scall scale of oil poullution accident frequently was occurred about 300-350 cases per ine(1) year. The countries advanced in marine relations like as, nited Kingdom and Japan, have perfect system The country of expert education, training and oil recovery equipments in oil poullution accidents. The large quantity oil skimming ship's basic condition need general skimming ship which was high speed and large quantity skimming ability , and hve to store the recovered oil into tanks This oil skimming shop are composit the skimmer whuch move up and down according to the wace movements, storage tank which storage the recovered oil in after side, transfer pump which transformed from flooding tank to separating tank and separating tank which separated the oil mixtures, Also there are cylindrical floated which keep the auto positing, gate which keep the auto positing, gate which protect and guide the recovering oil from sea and balance weight for skimmer balance. Also there are cylindrical floated which keep the auto positing, gate which protect and guide the recovering oil from sea and balance weight for skimmer balance. The important arrangement is twin arm which moved by two hinge and move te skimming unit by wave movement. In gate of inside, made long wear in the gate bellow position, there are also connected the flexible hose for oil mixtures drop. The separating tank composited with multi-divided bulkhead for ffective oil and sea water separating by settling and flotation principle. As use the above natural princile and equipment, we can remove the large quantity oil by developed oil skimming ship.ming ship.

• Journal of Environmental Science International
• /
• v.18 no.9
• /
• pp.971-981
• /
• 2009

An objective of this study is as follows: 1) performing sensitivity analysis and parameter estimation of RMA2 and RMA4 models for the West-Nakdong River, 2) drawing up alternatives of gates-operation for water-quality enhancement, and 3) quantitative evaluation of methodology of 'flow-restoration by gates-operation' among 'Comprehensive Plan Improving Water-Quality in the West-Nakdong River(WNR)' with the target water-quality(BOD at Nakbon-N point: below 4.3 mg/L). The parameters for the RMA2 (depth-averaged two-dimensional flow model) and RMA4 (depth-averaged two-dimensional water-quality model) were determined by sensitivity analysis. Result of parameter estimation for RMA2 and RMA4 models is $1,000\;Pa{\cdot}s$ of the eddy viscosity, 20 of the Peclet number, 0.025 of the Manning coefficient, and $1.0\;m^2/s$ of the diffusion coefficient. We have evaluated the effects of water-quality enhancement of the selected alternatives by numerical simulation technique with the models under the steady-state flow condition and the time-variant transport condition. Because of no-resuspension from river bottom and considering BOD as conservative matter, these simulation results slightly differ from real phenomena. In the case of $50\;m^3/s$ of Daejeo-gate inflow, two-dimensional flow pn results result represents that small velocity occurs in the Pyungkang Stream and no flow in the Maekdo River. In the WNR, there occurs the most rapid flow near timhae-bridge. In the WNR, changes of water-quality for the four selected simulation cases(6, 10, 30, $50\;m^3/s$ of the Daejeo-gate inflow) were predicted. Since the Daejeo-Gate and the Noksan-Gate can be opened up to 7 days, it would be found that sustainable inflow of $30\;m^3/s$ at the Daejeo-gate makes BOD in the WNR to be under the target of water-quality.

• Design & Manufacturing
• /
• v.14 no.1
• /
• pp.1-7
• /
• 2020

In this study, the variation of the shrinkage in the thickness direction of the molded parts according to the gate size of the polymer core fabricated through the 3D printer using the SLS method was studied. The polymer cores are laser sintered and the powder material is nylon base PA2200. The polymer cores have lower heat transfer rate and rigidity than the metal core due to the characteristics of the material. Therefore, the injection molding test conditions are set to minimize the deformation of the core during the injection process. The resin used in the injection molding test is a PP material. The packing condition was set to 80, 90 and 100% of the maximum injection pressure for each gate size. The runner diameter used was ∅3mm, and the gates were fabricated in semicircle shapes with cross sections 1, 2, and 3 ㎟, respectively. Thickness measurement was performed for 10 points at 2.5 mm intervals from the point 2.5 mm away from the gate, and the shrinkage to thickness was measured for each point. The shrinkage rate according to the gate size tends to decrease as the cross-sectional area decreases as the maximum injection pressure increases. The average thickness shrinkage rate was close to 0% when the packing pressure was 90% for the gate area of 1mm2. When the holding pressure was set to 100%, the shrinkage was found to decrease by 3% from the standard dimension due to the over-packing phenomenon. Therefore, the smaller the gate, the more closely the molded dimensions can be molded due to the high pressure generation. It was confirmed that precise packing process control is necessary because over-packing phenomenon may occur.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.344-344
• /
• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Korean Chemical Engineering Research
• /
• v.48 no.6
• /
• pp.737-740
• /
• 2010

High leakage current and threshold voltage shift(${\Delta}Vth$) are demerits of a-Si:H TFT. These characteristics are influenced by gate insulator and active layer film quality, surface roughness, and process conditions. The purpose of this investigation is to improve off current($I_{off}$) and ${\Delta}V_{th}$ characteristics. Nitrogen-rich deposition condition was applied to gate insulator, and hydrogen-rich deposition condition was applied to active layer to reduce electron trap site and improve film density. $I_{off}$ improved from 1.01 pA to 0.18 pA at $65^{\circ}C$, and ${\Delta}V_{th}$ improved from -1.89 V to 1.22 V.

• Journal of Korea Foundry Society
• /
• v.20 no.2
• /
• pp.97-103
• /
• 2000

In this study, a design of experiment, Taguchi method, was applied to optimize gating system design of escalator step die casting parts. Six shape factors which affect filling sequence of melt are adopted and divided into two levels respectively. Initial feeding differences of melt which were calculated by using S/N(signal-to-noise) ratio in each condition were demonstrated with the simulation of Flow-3D software program. Variations of S/N ratio according to shape factors were obtained and the optimal condition of gating system could also be obtained. It could be found that width of gate, contact angle of gate, thickness of runner are more effective factors on the filling sequence of melt than the others in this case of escalator step die casting parts. It showed that the economical gating system and sound filling sequence of melt were obtained by using Taguchi method.

• Journal of the Korean Society for Precision Engineering
• /
• v.31 no.1
• /
• pp.9-13
• /
• 2014

The molding process can be divided into five separate steps: plastification, injection, holding, cooling, and finally ejection. In the plastic injection molding, the effect factor such as mold temperature, injection speed, packing pressure and inhomogeneous cooling under packing process affects both the article dimension and physical characteristics. Especially, the packing pressure is the most critical factor to affect molded articles quality among the packing parameters. In this paper, the CAE simulation considering the molding condition is performed to predict the faulty cause which appears in the packing process between cavities of injection molding machine. From the results of CAE simulation, the packing phenomena according to the product form and the gate position was investigated to improve the article quality and minimize the various molding defects. The effect of packing pressure and gate number on the injection molding was discussed.

• Transactions of the Korean Society of Machine Tool Engineers
• /
• v.15 no.4
• /
• pp.1-7
• /
• 2006

Injection molding is a very important industrial process for the manufacturing of plastics objects. During an injection molding process of composites, the fiber-matrix separation and fiber orientation are caused by the flow of molten polymer/fiber mixture. As a result, the product tends to be nonhomogeneous and anisotropic. Hence, it is very important to clarify the relations between separation orientation and injection molding conditions. So far, there is no research on the measurement of fiber orientation using image processing. In this study, the effects of fiber content ratio and molding condition on the fiber orientation-angle distributions are studied experimentally. Using the image processing method, the fiber orientation distribution of weld-line in injection-molded products is assessed. And the effects of fiber content and injection mold-gate conditions on the fiber orientation are also discussed.