• 약학회지
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• 제57권6호
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• pp.420-425
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• 2013

Phentermine (PT) and phenmetrazine (PM) have been widely used as anti-obesity drugs. These drugs should be used with caution due to its close relation to amphetamine in its structure and toxicity. PT and PM, amphetamine-type anorectics, have recently been considered as alternatives for methamphetamine abuse in Korea. In addition, the misuse and abuse of PT and PM obtained by illegal sources such as the internet become a serious social problem. In the present study, a simultaneous detection and quantification method for determining PT and PM in human urine was developed and validated according to the international guidelines. The urine samples were screened using a fluorescence polarization immunooassay and analyzed by gas chromatography mass spectrometry (GC-MS) after extraction using automatic solid phase extraction (SPE) with a mixed-mode cation exchange cartridge and derivatization with pentafluoropropionic anhydride (PFPA). The validation results for selectivity, linearity, limits of detection (LOD) and quantification (LOQ), intra- and inter-assay precision and accuracy and recovery were satisfactory. The validated method was successfully applied to authentic urine samples collected from 38 drug abuse suspects. PT and/or PM were identified with or without methamphetamine in urine samples. Abuse of PT and PM have increased continuously in Korea, therefore, closer supervision of the inappropriate use of anoretics is necessary.

• 한국전기전자재료학회논문지
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• 제16권7호
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• pp.573-578
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• 2003

Low temperature selective epitaxial growth of Si and SiGe has been obtained using an industrial single wafer chemical vapor deposition module operating at reduced pressure. Epitaxial Si and heteroepitaxial SiGe deposition with Ge content about 20 % has been studied as extrinsic base for self-aligned heterojunction bipolar transistors(HBTs), which helps to reduce the parasitic resistance to obtain higher maximum oscillation frequencies(f$\_$max/). The dependence of Si and SiGe deposition rates on exposed windows and their evolution with the addition of HCl to the gas mixture are investigated. SiH$_2$Cl$_2$ was used as the source of Si SEG(Selective Epitaxial Growth) and GeH$_4$ was added to grow SiGe SEG. The addition of HCl into the gas mixture allows increasing an incubation time even low growth temperature of 675∼725$^{\circ}C$. In addition, the selectivity is enhanced for the SiGe alloy and it was proposed that the incubation time for the polycrystalline deposit on the oxide is increased probably due to GeO formation. On the other hand, when only SiGe SEG(Selective Epitaxial Growth) layer is used for extrinsic base, it shows a higher sheet resistance with Ti-silicide because of Ge segregation to the interface, but in case of Si or Si/SiGe SEG layer, the sheet resistance is decreased up to 70 %.

• 센서학회지
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• 제8권3호
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• pp.274-282
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• 1999

암모니아가스에 민감한 In이 도핑된 ZnO(ZnO:In) 박막을 In 박막($100\;{\AA}$) 및 ZnO박막($3000\;{\AA}$)의 연속적인 증착과 열처리공정을 통하여 제조하였다. 기판은 $1000\;{\AA}$의 산화막이 열적으로 성장되어 있는 Si 기판을 사용하였다. In/ZnO 박막 이중층의 열처리온도에 따른 구조적 및 전기적 특성을 X-선회절기, 주사전자현미경 및 4점측정시스템을 통하여 조사하였다. 이들 막에 대하여 열처리온도에 따른 암모니아가스에 대한 감도, 선택성 및 시간응답특성을 구하였다. 열처리온도 $400^{\circ}C$, 동작온도 $300^{\circ}C$에서 100 ppm의 암모니아가스를 주입한 결과 140%의 최대감도를 나타내었으며 CO, $NO_x$ 가스에 대한 감도는 아주 낮은 것으로 나타났다.

• 센서학회지
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• 제5권5호
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• pp.47-54
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• 1996

$WO_{3}$모물질에 Pt와 $SnO_{2}$ 활성촉매를 첨가하여 수 ppm정도의 NOx를 감지할 수 있는 후막형 NOx센서를 제조하였다. 센서의 최대 감도는 $250^{\circ}C$정도에서 얻을 수 있었으나, 회복속도를 고려하여 $330^{\circ}C$에서 특성실험을 실시하였다. 기존의 $WO_{3}$를 사용한 것보다 감도, 반응 및 회복 속도가 개선되었고 또한 뛰어난 선택성과 기체흐름에 대한 안정성을 보여주었다. 농도변화에 대한 선형성이 우수하게 나타남으로 계측기에 응용가능성을 보여주었다.

• 한국수소및신에너지학회논문집
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• 제32권5호
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• pp.388-400
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• 2021

Power to gas (P2G) is one of the energy storage technologies that can increase the storage period and storage capacity compared to the existing battery type. One of P2G technology produces hydrogen by decomposing water from renewable energy (electricity) and the other produces CH4 by reacting hydrogen with CO2. This study is an experimental study to produce CH4 by reacting CO2 of biogas with hydrogen using a 40 wt% Ni-Mg-Al catalyst and a commercial catalyst. Catalyst characteristics were analyzed through H2-TPR, XRD, and XPS instruments of 40% Ni catalyst and commercial catalyst. The effect on the CO2 conversion rate and CH4 selectivity was analyzed, and the activities of a 40% Ni catalyst and a commercial catalyst were compared. As a result of experiment, In the case of a 40 wt% catalyst, the maximum CO2 conversion rate showed 77% at the reaction temperature of 400℃. Meanwhile, the commercial catalyst showed a maximum CO2 conversion rate of 60% at 450℃. When 50% of CO was added to the CO2 methanation reaction, the CO2 conversion rate was increased by about 5%. This is considered to be due to the atmosphere in which the CO reaction can occur without the process of converting to CH4 after forming carbon and CO as intermediates in terms of the CO2 mechanism on the catalyst surface.

• 청정기술
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• 제15권1호
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• pp.42-46
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• 2009

아세틴 촉매상에서 글리세롤(바이오디젤 제조과정의 부산물)과 염화수소 가스로부터 무용매 상태로 디클로로프로판올(DCP)을 직접 제조하는 반응을 기상-액상 회분식 반응기에서 수행하였다. 이를 위해 균일계 아세틴 촉매로 아세틴 혼합물(acetin mixture)과 트리아세틴을 사용하였다. 아세틴 촉매의 활성을 동일한 반응조건($110^{\circ}C$, 3 bar, 3시간)에서 수행된 무촉매 상태에서의 반응성과 비교하였다. 무촉매 반응에 비해 아세틴촉매를 사용한 반응에서 글리세롤의 전환율은 3%정도 증가하였으며 디클로로프로판올의 선택도는 50%가량 증가하였다. 또한 아세틴 혼합물보다는 트리아세틴의 촉매활성이 2% 정도 우수한 것으로 나타났다.

• 멤브레인
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• 제33권6호
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• pp.344-351
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• 2023

본 연구에서는 중공사형 이산화탄소 분리막 모듈을 사용하여 수소개질기 배가스로부터 이산화탄소 포집을 목적으로 한 분리막 공정 최적화 연구를 진행하였다. 랩스케일의 소형 분리막 모듈을 사용하여 혼합기체를 대상으로 이산화탄소 순도 90% 및 회수율 90%을 달성하는 2단 공정 조건을 도출하였다. 막 면적이 정해진 모듈의 분리막 공정에서는 스테이지-컷, 주입부 및 투과부 압력에 따라서 포집 순도 및 회수율이 모두 다르게 나타나기 때문에 운전 조건에 대한 최적화가 필수적이다. 본 연구에서는 다양한 운전 조건에서 1단 분리막에서 보이는 공정 포집 효율의 한계를 확인하고, 높은 순도와 회수율을 동시에 달성하기 위한 2단 회수 공정을 최적화하였다.

• 분석과학
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• 제36권5호
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• pp.236-249
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• 2023

Carbon dioxide (CO₂) capture and storage is a critical issue for mitigating climate change. Porous aromatic Schiff base complexes have emerged as a promising class of materials for CO₂ capture due to their high surface area, porosity, and stability. In this study, we investigate the potential of Schiff base complexes as an effective media for CO₂ storage. We review the synthesis and characterization of porous aromatic Schiff bases materials complexes and examine their CO₂ sorption properties. We find that Schiff base complexes exhibit high CO₂ adsorption capacity and selectivity, making them a promising candidate for use in carbon capture applications. Moreover, we investigate the effect of various parameters such as temperature, and pressure on the CO₂ adsorption properties of Schiff base complexes. The Schiff bases possessed tiny Brunauer-Emmett-Teller surface areas (4.7-19.4 m²/g), typical pore diameters of 12.8-29.43 nm, and pore volumes ranging from 0.02-0.073 cm³/g. Overall, our results suggest that synthesized complexes have great potential as an effective media for CO₂ storage, which could significantly reduce greenhouse gas emissions and contribute to mitigating climate change. The study provides valuable insights into the design of novel materials for CO₂ capture and storage, which is a critical area of research for achieving a sustainable future.

• 공업화학
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• 제35권2호
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• pp.134-139
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• 2024

메탄의 수증기 개질 반응에서 Ni 기반 촉매에 귀금속 Ru 및 Pd을 조촉매로 첨가하여 촉매의 활성 및 수소 생산에 미치는 영향을 분석하였다. 합성된 촉매는 허니컴 구조의 금속 모노리스 구조체 표면에 코팅하여 수증기 메탄 개질 반응을 수행하였다. 촉매의 특성은 XRD, TPR 및 SEM으로 분석하였으며 개질 반응 후 가스를 포집하여 GC로 조성을 분석한 후 메탄의 전환율, 수소 수율 및 CO 선택도를 측정하였다. 0.5 wt%의 Ru 첨가는 Ni의 환원 특성을 개선하였고, 99.91%의 메탄 전환율로 향상된 촉매 활성을 나타내었다. 또한, 다양한 공정 조건에 따른 반응 특성을 분석하였으며, 800 ℃의 반응 온도, 10000 h^-1 이하의 공간속도(GHSV), 3 이상의 H₂O와 CH₄의 비(S/C)에서 90% 이상의 메탄 전환율과 3.3 이상의 수소 수율을 얻을 수 있었다.

• 한국표면공학회지
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• 제41권5호
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• pp.189-193
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• 2008

In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity to $SiO_2$ and $HfO_2$) of TiN thin films in the $CH_4$/Ar inductively coupled plasma. The maximum etch rate of $274\;{\AA}/min$ for TiN thin films was obtained at $CH_4$(80%)/Ar(20%) gas mixing ratio. At the same time, the etch rate was measured as function of the etching parameters such as RF power, Bias power, and process pressure. The X-ray photoelectron spectroscopy analysis showed an efficient destruction of the oxide bonds by the ion bombardment as well as showed an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the $CH_4$ containing plasmas.