• Elastomers and Composites
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• v.54 no.3
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• pp.175-181
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• 2019

The research and development of high-performance polymer materials with excellent gas barrier properties has gained considerable attention from the viewpoint of expanding their applications in various fields, including tire automobile parts and the polymer film industry. Natural rubber (NR) has been widely used as a rubber material in real-life, but its application is limited owing to its poor gas barrier properties. In this paper, we study the gas barrier properties of NR, epoxidized natural rubber (ENR), and their blend compositions by using molecular simulation. The results show that ENR-50 has superior oxygen barrier properties than those of NR. Moreover, the oxygen barrier properties of a blend of NR/ENR-50 improve with increasing volume fraction of ENR-50. The trend of improved oxygen barrier properties of NR, ENR-50, and their blend is in good agreement with experimental observations.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.5
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• pp.201-206
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• 2004

In order to investigate the optimum conditions for the effective ozone formation in a dielectric barrier discharge, measurements of ozone concentration were carried out for various conditions such as the gap length, the dielectric material and the operating gas. It was found that the optimum discharge conditions differed exceedingly in the types of operating gases and dielectric materials. In dry air, dielectric material with low dielectric constant and thermal conductivity, which might contribute to the restriction of the gas temperature rise in the discharge region, proved effective in obtaining both high ozone yield and concentration. The optimum gap length was considered to be in the range of 600-800 mm. In oxygen, using a quartz glass disk as a dielectric material, the required condition to obtain the high ozone yield and concentration was expanded.

• ETRI Journal
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• v.34 no.5
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• pp.713-718
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• 2012

Sensor nodes in ubiquitous sensor networks require autonomous replacement of deteriorated gas sensors with reserved sensors, which has led us to develop an encapsulation technique to avoid poisoning the reserved sensors and an autonomous activation technique to replace a deteriorated sensor with a reserved sensor. Encapsulations of $In_2O_3$ nanoparticles with poly(ethylene-co-vinyl alcohol) (EVOH) or polyvinylidene difluoride (PVDF) as gas barrier layers are reported. The EVOH or PVDF films are used for an encapsulation of $In_2O_3$ as a sensing material and are effective in blocking $In_2O_3$ from contacting formaldehyde (HCHO) gas. The activation process of $In_2O_3$ by removing the EVOH through heating is effective. However, the thermal decomposition of the PVDF affects the property of the $In_2O_3$ in terms of the gas reactivity. The response of the sensor to HCHO gas after removing the EVOH is 26%, which is not significantly different with the response of 28% in a reference sample that was not treated at all. We believe that the selection of gas barrier materials for the encapsulation and activation of $In_2O_3$ should be considered because of the ill effect the byproduct of thermal decomposition has on the sensing materials and other thermal properties of the barrier materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.6
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• pp.379-383
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• 2015

Some insulating materials are organized and analyzed with variables to obtain the optimized profile of encapsulated three phase of epoxy barrier which is applied to gas compartment and supporting conductors for high voltage GIS (gas insulated switchgear). The high voltage GIS is used in electrical power system and operating reliability. In this paper, optimization possibility of barrier shape including both electrical insulation performance and mechanical strength, premised on that condition minimizing volume and light weight should be kept for high voltage GIS, could be achieved by analysis simulation. As a result, filling material which is lower permittivity such as $SiO_2$ instead of $Al_2O_3$ properly to the epoxy material, can be improved to increase the electrical insulation performance and mechanical strength for an optimized profile barrier of a high voltage GIS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.283-284
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• 2008

Electrical and optical characteristics of indium tin oxide (ITO) and indium zinc oxide (IZO) films without and with $(SiO_2)_3(ZnO)_7$ at.% (SZO) film deposited on poly(ethylene naphthalate) (PEN) and poly(ethylene terephthalate (PET) substrates as a gas barrier layer for flexible display were studied. The ITO and IZO films with SZO gas barrier layer showed the improved properties which were both the high transmittance of average 80% in the visible light range and the decreased sheet resistance as compared to those of ITO and IZO films without SZO layer. Particularly, the PEN substrate with only SZO gas barrier layer had a low water vapor transmission rate (WVTR) of $\sim10^{-3}g/m^2$/day. Thus, we suggest that the SZO film with protection ability against the water vapor permeation can be applied to gas barrier layer for flexible display.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.4
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• pp.347-357
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• 2024

Oxide semiconductor gas sensors are widely used for detecting toxic, explosive, and flammable gases due to their simple structure, cost-effectiveness, and potential integration into compact devices. However, their reliable gas detection is hindered by a longstanding issue known as humidity dependence, wherein the sensor resistance and gas response change significantly in the presence of moisture. This problem has persisted since the inception of oxide semiconductor gas sensors in the 1960s. This paper explores the root causes of humidity dependence in oxide semiconductor gas sensors and presents strategies to address this challenge. Mitigation strategies include functionalizing the gas-sensing material with noble metal/transition metal oxides and rare-earth/rare-earth oxides, as well as implementing a moisture barrier layer to prevent moisture diffusion into the gas-sensing film. Developing oxide semiconductor gas sensors immune to humidity dependence is expected to yield substantial socioeconomic benefits by enabling medical diagnosis, food quality assessment, environmental monitoring, and sensor network establishment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.163-166
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• 1998

The mechanism of methane sensing by Pd-SiC diode was investigated over the temperature range of 400~$600^{\circ}C$. The effects or methane gas reaction on the parameters such as barrier height, initial rate of methane gas reaction are investigated. The methane gas reaction kinetics on the device are also discussed. The physical and chemical mechanism responsible for methane detection are proposed. Analysis of steady-state reaction kinetics using I-V method confirmed that methane gas reaction processes are responsible for the barrier height change in the diode.

• Membrane Journal
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• v.27 no.2
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• pp.154-166
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• 2017

Polymeric films for gas barrier applications such as food packaging and electronic devices have attracted great interest due to their cheap, light and easy processability among gas barrier materials. Especially in electronic devices, extremely low gas permeance is necessary for maintaining the device performance. However, current polymeric barrier films still suffer from relatively high gas permeance than other materials. Therefore, there have been strong needs to enhance the gas barrier performance of polymeric barrier films while keep their own advantages. Recently, graphene is highlighted as a 2D-layered material for gas barrier applications. However, owing to the poor workability and difficulty to produce in engineering scale, graphene oxide (GO) is on the rise. GO consists of oxygen-containing functional groups on surface with intrinsic 2D-layered structure and high aspect ratio, and it can be well-dispersed in aqueous polar solvents like water, resulting in scalable mass production. Here, we prepared GO incorporated polyimide (PI) nanocomposites. PI is widely used barrier polymer with high mechanical strength and thermal and chemical stability. We demonstrated that PI/GO nanocomposites could perform as a gas barrier. Furthermore, surfactants (Triton X-100 (TX) and Sodium deoxycholate (SDC)) are introduced to enhance the gas barrier performance by improving the degree of dispersion of GO in PI matrix. As a result, TX enhanced the gas barrier performance of PI/GO nanocomposites which is similar to predicted value. This finding will provide new insight to polymer nanocomposites for gas barrier applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.524-524
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• 2012

Thermal Barrier Coating (TBC)은 미사일, 로켓발사체와 같이 고온에 노출되는 장비를 열로부터 보호하기 위한 코팅이다. 일반적인 Thermal Barrier Coating (TBC)은 모재와 코팅층간의 낮은 접합력과 높은 열충격으로 인한 박리가 많이 나타난다. 그래서 접합력을 높이고, 열충격을 줄이기 위해 모재와 코팅층 사이에 본드코팅층을 만든 Duplex - Thermal Barrier Coating (Duplex-TBC)이 개발되었다. 그러나 Duplex - Thermal Barrier Coating (Duplex-TBC)은 금속재료인 본드코팅층과 세라믹재료인 탑코팅층 사이에서 박리가 많이 발생한다. 이러한 문제점을 해결하기 위해 두 가지 분말을 동시에 코팅하여 본드코팅과 탑코팅의 경계가 없는 Functional Gradient Material - Thermal Barrier Coating (FGM-TBC)의 연구가 필요하다. 본 연구에서는 Functional Gradient Material - Thermal Barrier Coating (FGM-TBC)의 열충격 특성에 미치는 진공 플라즈마 용사 조건의 영향을 조사하였다. Functional Gradient Material - Thermal Barrier Coating (FGM-TBC)는 진공 플라즈마 용사장치를 사용하여 Cu-Cr 합금위에 코팅하였다. 거리, Carrier gas flow, 그리고 챔버 내부의 압력을 달리하여 제조하였다. 사용한 분말은 본드코팅용으로 Amdry 962와 내열 세라믹코팅을 위해 204NS를 사용하였고, 각각 분말 공급조건을 조절하여 두 분말의 비율을 달리하였다. 제조한 Functional Gradient Material - Thermal Barrier Coating (FGM-TBC) 코팅은 전기로에서 50분간 가열한 후, 수조에서 10분간 냉각하는 열충격 실험을 통해 열차폐 성능을 평가 하였다. 이러한 과정에서 진공 플라즈마 용사 조건 및 FGM 조성과 비율이 내열충격 특성에 미치는 영향을 미세조직학적 관점에서 고찰하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.344-344
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• 2010

A capacitor with engineered tunnel barrier composed of High-k materials has been fabricated. Variable oxide thickness (VARIOT) barrier consisting of thin SiO2/HfO2/Al2O3 (2/1/3 nm) dielectric layers were used as engineered tunneling barrier. We studied the electrical characteristics of multi stacked tunnel layers for various RTA (Rapid Thermal Anneal) and FGA (Forming Gas Anneal) temperature.