• The Transactions of the Korean Institute of Power Electronics
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• v.26 no.5
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• pp.325-333
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• 2021

A 3 kW grid-tied PV inverter with Gallium nitride high-electron mobility transistor (GaN HEMT) for domestic commercialization was developed using boost converter and full-bridge inverter with LCL filter topology. Recently, many GaN HEMTs are manufactured as surface mount packages because of their lower parasitic inductance characteristic than standard TO (transistor outline) packages. A surface mount packaged GaN HEMT releases heat through either top or bottom cooling method. IGOT60R070D1 is selected as a key power semiconductor because it has a top cooling method and fairly low thermal resistances from junction to ambient. Its characteristics allow the design of a 3 kW inverter without forced convection, thereby providing great advantages in terms of easy maintenance and high reliability. 1EDF5673K is selected as a gate driver because its driving current and negative voltage output characteristics are highly optimized for IGOT60R070D1. An LCL filter with passive damping resistor is applied to attenuate the switching frequency harmonics to the grid-tied operation. The designed LCL filter parameters are validated with PSIM simulation. A prototype of 3 kW PV inverter with GaN HEMT is constructed to verify the performance of the power conversion system. It achieved high power density of 614 W/L and peak power efficiency of 99% for the boost converter and inverter.

• Journal of IKEEE
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• v.23 no.2
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• pp.425-430
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• 2019

This work describes the design and characterization of a X-band power amplifier (PA) monolithic microwave integrated circuit (MMIC) using a $0.25{\mu}m$ gate length gallium nitride (GaN) high electron mobility transistor (HEMT) technology. The developed X-band power amplifier MMIC has small signal gain of over 22.7 dB and saturated output power of 43.02 dBm (20.04 W) over the entire band of 9 to 10 GHz. Maximum saturated output power is a 43.84 dBm (24.21 W) at 9.5 GHz. Its power added efficiency (PAE) is 41.0~51.24% and the chip dimensions are $3.7mm{\times}2.3mm$, generating the output power density of $2.84W/mm^2$. The developed GaN power amplifier MMIC is expected to be applied in a variety of X-band radar applications.

• Journal of IKEEE
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• v.26 no.4
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• pp.553-559
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• 2022

In this paper, RC snubber circuit design technology for oscillation suppression in half-bridge configuration of cascode gallium nitride (GaN) field effect transistors (FETs) is analyzed. A typical wide band-gap (WBG) device, cascode GaN FET, has excellent high-speed switching characteristics. However, due to such high-speed switching characteristics, a false turn-off problem is caused, and an RC snubber circuit is essential to suppress this. In this paper, the commonly used experimental-based RC snubber design technique and the RC snubber design technique using the root locus method are compared and analyzed. In the general method, continuous circuit changes are required until the oscillation suppression performance requirement is met based on experimental experience . However, in root locus method, the initial value can be set based on the non-oscillation R-C map. To compare the performance of the two aforementioned design methods, a simulation experiment and a switching experiment using an actual double pulse circuit are performed.

• Journal of electromagnetic engineering and science
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• v.14 no.4
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• pp.399-404
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• 2014

A power amplifier (PA) for a femto-cell base station should be highly efficient, linear and small. The efficiency for amplification of a high peak-to-average power ratio (PAPR) signal was improved by designing an asymmetric Doherty PA (DPA). The linearity was improved by applying third-order inter-modulation (IM3) cancellation method. A small size is achieved by designing the DPA using GaN MMIC process. The implemented 2-stage DPA delivers a power-added efficiency (PAE) of 38.6% and a gain of 33.4 dB with an average power of 34.2 dBm for a 7.2 dB PAPR 10 MHz bandwidth LTE signal at 2.14 GHz.

• Journal of the Korea Institute of Military Science and Technology
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• v.13 no.6
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• pp.1071-1079
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• 2010

This paper describes the design and fabrication of a high-efficiency GaN HEMT(Gallium Nitride High-electron Mobility Transistor) Pallet power amplifier module for S-band phased array radar applications. Pallet amplifier module has a series 2-cascaded power amplifier and the final amplification-stage consists of balanced GaN HEMT transistor. In order to achieve high efficiency characteristic of pallet power amplifier module, all amplifiers are designed to the switching-mode amplifier. We performed with various PRF(Pulse Repetition Frequency) of 1, 10, 100 and 1000Hz at a fixed pulse width of $100{\mu}s$. In the experimental results, the output power, gain, and drain efficiency(${\eta}_{total}$) of the Pallet power amplifier module are 300W, 33dB, and 51% at saturated output power of 2.9GHz, respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.3
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• pp.649-657
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• 2008

This paper describes the optimized output performances such as output power and the third order intermodulation in GaN high power transistor packages which consist of chip die, chip capacitors, and wire bonding. The optimized output power according to wire bonding techniques, and third order intermodulation performances according to wire bonding and bias conditions are discussed. In addition, it is shown through the nonlinear simulation that how the output performances are sensitive to the inductance values which are realized by wire bonding for matching network in the limited package area.

• Transactions on Electrical and Electronic Materials
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• v.18 no.1
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• pp.7-12
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• 2017

This work takes place in the context of the development of a transport phenomena simulation based on group III nitrides. Gallium and boron nitrides (GaN and BN) are both materials with interesting physical properties; they have a direct band gap and are relatively large compared to other semiconductors. The main objective of this paper is to study the effect of boron content on the electron transport of the ternary compound $B_xGa_{(1-x)}N$ and the effect of the temperature of this alloy at x=50% boron percentage, specifically the piezoelectric, acoustic, and polar optical scatterings as a function of the energy, and the electron energy and drift velocity versus the applied electric field for different boron compositions ($B_xGa_{(1-x)}N$), at various temperatures for $B_{0.5}Ga_{0.5}N$. Monte carlo simulation, was employed and the three valleys of the conduction band (${\Gamma}$, L, X) were considered to be non-parabolic. We focus on the interactions that do not significantly affect the behavior of the electron. Nevertheless, they are introduced to obtain a quantitative description of the electronic dynamics. We find that the form of the velocity-field characteristic changes substantially when the temperature is increased, and a remarkable effect is observed from the boron content in $B_xGa_{(1-x)}N$ alloy and the applied field on the dynamics of holders within the lattice as a result of interaction mechanisms.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.557-565
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• 2014

We report the effect of basal-plane stacking faults (BSFs) on X-ray diffraction (XRD) of non-polar (11$\underline{2}$0) a-plane GaN films with different $SiN_x$ interlayers. Complete $SiN_x$ coverage and increased three-dimensional (3D) to two-dimensional (2D) transition stages substantially reduce BSF density. It was revealed that the Si-doping profile in the Si-doped GaN layer was unaffected by the introduction of a $SiN_x$ interlayer. The smallest in-plane anisotropy of the (11$\underline{2}$0) XRD ${\omega}$-scan widths was found in the sample with multiple $SiN_x$ layers, and this finding can be attributed to the relatively isotropic GaN mosaic resulting from the increase in the 3D-2D growth step. Williamson-Hall (WH) analysis of the (h0$\underline{h}$0) series of diffractions was employed to determine the c-axis lateral coherence length (LCL) and to estimate the mosaic tilt. The c-axis LCLs obtained from WH analyses of the present study's representative a-plane GaN samples were well correlated with the BSF-related results from both the off-axis XRD ${\omega}$-scan and transmission electron microscopy (TEM). Based on WH and TEM analyses, the trends in BSF densities were very similar, even though the BSF densities extracted from LCLs indicated that the values were reduced by a factor of about twenty.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.2
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• pp.41-46
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• 2020

The characteristics of the residual stress on the types of the substrate was investigated with adjusting the V/III ratio during GaN growth via the HVPE method. GaN single crystal layers were grown on a sapphire substrate and a GaN template under the conditions of V/III ratio 5, 10, and 15, respectively. During GaN growth, multiple hexagonal pits in GaN single crystal were differently revealed in accordance with growth condition and substrate type, and their distribution and depth were measured via optical microscopy(OM) and white light interferometry(WLI). As a result, it was confirmed that the distribution area and depth of hexagonal pit tended to increase as the V/III ratio increased. Moreover, it was found that the residual stress in GaN single crystal decreased as the distribution area and depth of the pit increased through measuring micro Raman spectrophotometer. In the case of GaN growth according to substrate type, the GaN on GaN template showed lower residual stress than the GaN grown on sapphire substrate.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.7
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• pp.10-16
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• 2011

We report on the simulation results of electrical/optical characteristics for nonpolar GaN LED having Mg-doped GaN spacer and quantum barrier, in comparison with those of the typical nonpolar GaN LED. In order to reduce the band-gap energy distortion and conduction-band discontinuity in InGaN/GaN multiple quantum wells(MQWs) of nonpolar GaN LED, and thereby to increase their current-voltage, light output power and emission peak intensity, we applied 6 nm-thick p-type($1{\times}10^{18}\;cm^{-3}$) GaN spacer and GaN QB schemes to the typical nonpolar GaN LED epitaxial structure. As a result, we found that the radiative recombination rate was increased by 23% in MQWs at 20 mA current injection. Also, the forward voltage($V_f$) and the light output power($P_{out}$) were improved by 3.7% and 7%, respectively, for the proposed nonpolar LED epitaxial structure, compared with those of the typical nonpolar GaN LED.