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http://dx.doi.org/10.6111/JKCGCT.2020.30.2.041

Study on residual stress characteristics according to the substrate type and V/III ratio during GaN growth by HVPE  

Lee, Joo Hyung (Division of Materials Science and Engineering, Hanyang University)
Lee, Seung Hoon (Division of Materials Science and Engineering, Hanyang University)
Lee, Hee Ae (Division of Materials Science and Engineering, Hanyang University)
Kang, Hyo Sang (Division of Materials Science and Engineering, Hanyang University)
Oh, Nuri (Division of Materials Science and Engineering, Hanyang University)
Yi, Sung Chul (Department of Chemical Engineering, Hanyang University)
Lee, Seong Kuk (AMES Micron Co. Ltd.)
Park, Jae Hwa (AMES Micron Co. Ltd.)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.30, no.2, 2020 , pp. 41-46 More about this Journal
Abstract
The characteristics of the residual stress on the types of the substrate was investigated with adjusting the V/III ratio during GaN growth via the HVPE method. GaN single crystal layers were grown on a sapphire substrate and a GaN template under the conditions of V/III ratio 5, 10, and 15, respectively. During GaN growth, multiple hexagonal pits in GaN single crystal were differently revealed in accordance with growth condition and substrate type, and their distribution and depth were measured via optical microscopy(OM) and white light interferometry(WLI). As a result, it was confirmed that the distribution area and depth of hexagonal pit tended to increase as the V/III ratio increased. Moreover, it was found that the residual stress in GaN single crystal decreased as the distribution area and depth of the pit increased through measuring micro Raman spectrophotometer. In the case of GaN growth according to substrate type, the GaN on GaN template showed lower residual stress than the GaN grown on sapphire substrate.
Keywords
Gallium nitride; HVPE; V/III ratio; Hexagonal pit; Stress;
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Times Cited By KSCI : 4  (Citation Analysis)
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