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Design of an High Efficiency Pallet Power Amplifier Module  

Choi, Gil-Wong (Kwangwoon University)
Kim, Hyoung-Jong (Kwangwoon University)
Choi, Jin-Joo (Kwangwoon University)
Choi, Jun-Ho (ADD)
Publication Information
Journal of the Korea Institute of Military Science and Technology / v.13, no.6, 2010 , pp. 1071-1079 More about this Journal
Abstract
This paper describes the design and fabrication of a high-efficiency GaN HEMT(Gallium Nitride High-electron Mobility Transistor) Pallet power amplifier module for S-band phased array radar applications. Pallet amplifier module has a series 2-cascaded power amplifier and the final amplification-stage consists of balanced GaN HEMT transistor. In order to achieve high efficiency characteristic of pallet power amplifier module, all amplifiers are designed to the switching-mode amplifier. We performed with various PRF(Pulse Repetition Frequency) of 1, 10, 100 and 1000Hz at a fixed pulse width of $100{\mu}s$. In the experimental results, the output power, gain, and drain efficiency(${\eta}_{total}$) of the Pallet power amplifier module are 300W, 33dB, and 51% at saturated output power of 2.9GHz, respectively.
Keywords
GaN HEMT; High Efficiency; Class-E Power Amplifier; Class-F Power Amplifier;
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