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http://dx.doi.org/10.5515/JKIEES.2014.14.4.399

Highly Linear 2-Stage Doherty Power Amplifier Using GaN MMIC  

Jee, Seunghoon (Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH))
Lee, Juyeon (Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH))
Kim, Seokhyeon (Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH))
Park, Yunsik (Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH))
Kim, Bumman (Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH))
Publication Information
Journal of electromagnetic engineering and science / v.14, no.4, 2014 , pp. 399-404 More about this Journal
Abstract
A power amplifier (PA) for a femto-cell base station should be highly efficient, linear and small. The efficiency for amplification of a high peak-to-average power ratio (PAPR) signal was improved by designing an asymmetric Doherty PA (DPA). The linearity was improved by applying third-order inter-modulation (IM3) cancellation method. A small size is achieved by designing the DPA using GaN MMIC process. The implemented 2-stage DPA delivers a power-added efficiency (PAE) of 38.6% and a gain of 33.4 dB with an average power of 34.2 dBm for a 7.2 dB PAPR 10 MHz bandwidth LTE signal at 2.14 GHz.
Keywords
Digital Predistortion (DPD); Doherty Power Amplifier (DPA); Gallium nitride (GaN); Long-Term Evolution (LTE); Monolithic Microwave Integrated Circuit (MMIC);
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