• Journal of Radiation Industry
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• v.5 no.2
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• pp.101-106
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• 2011

The separation of germanium and gallium ion with metal oxide was introduced into the development of $^{68}Ge/^{68}Ga$ generator. Germanium and gallium within mixed solution were respectively separated by using a liquid-liquid extraction and a column chromatographic method. The separation of Ge within high concentrated hydrochloric and sulfuric acid was conducted by the extraction to $CCl_4$ and the back-extraction to 0.05 M HCl. An optimum condition of the extraction by $CCl_4$ was in 5~7 M HCl and efficiency was around 80%. The gallium was selectively separated by using $Al_2O_3$ among metal oxides as sorbents from the mixed solution in 0.04~0.10 M HCl condition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.3
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• pp.308-310
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• 2022

Ultrawide bandgap gallium oxide (Ga₂O₃) semiconductors are known to have excellent photocatalytic properties due to their high redox potential. In this study, CO₂ reduction is demonstrated using nanostructured Ga₂O₃ photocatalyst under ultraviolet (254 nm) light source conditions. After the CO₂ reduction, C₂H₄ remained as a by-product in this work. Nanostructured Ga₂O₃ photocatalyst also showed an excellent endurance characteristic. Photogenerated electron-hole pairs boosted the CO₂ reduction to C₂H₄ via nanostructured Ga₂O₃ photocatalyst, which is attributed to the ultrawide and almost direct bandgap characteristics of the gallium oxide semiconductor. The findings in this work could expedite the realization of CO₂ reduction and a simultaneous C₂H₄ production using a low cost and high performance photocatalyst.

• The Journal of Advanced Prosthodontics
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• v.6 no.2
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• pp.79-87
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• 2014

PURPOSE. The aim of this study was to determine the efficiency of Erbium, Chromium: Yttrium-Scandium-Gallium-Garnet laser in different output powers for removing permanent resin cement residues and therefore its influence on microshear bond strength compared to other cleaning methods. MATERIALS AND METHODS. 90 extracted human molars were sectioned in 1 mm thickness. Resin cement was applied to surface of sliced teeth. After the removal of initial cement, 6 test groups were prepared by various dentin surface treatment methods as follows: no treatment (Group 1), ethylene diamine tetra acetic acid application (Group 2), Endosolv R application (Group 3), 1.25 W Erbium, Chromium:Yttrium-Scandium-Gallium-Garnet laser irradiation (Group 4), 2 W Erbium, Chromium:Yttrium-Scandium-Gallium-Garnet laser irradiation (Group 5) and 3.5 W Erbium, Chromium:Yttrium-Scandium-Gallium-Garnet laser irradiation (Group 6). The topography and morphology of the treated dentin surfaces were investigated by scanning electron microscopy (n=2 for each group). Following the repetitive cementation, microshear bond strength between dentin and cement (n=26 in per group) were measured with universal testing machine and the data were analyzed by Kruskal Wallis H Test with Bonferroni correction (P<.05). Fracture patterns were investigated by light microscope. RESULTS. Mean microshear bond strength ${\pm}$ SD (MPa) for each group was $34.9{\pm}17.7$, $32.1{\pm}15.8$, $37.8{\pm}19.3$, $31.3{\pm}12.7$, $44.4{\pm}13.6$, $40.2{\pm}13.2$ respectively. Group 5 showed significantly difference from Group 1, Group 2 and Group 4. Also, Group 6 was found statistically different from Group 4. CONCLUSION. 2 W and 3.5 W Erbium, Chromium: Yttrium-Scandium-Gallium-Garnet laser application were found efficient in removing resin residues.

• Journal of the Korean Chemical Society
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• v.24 no.4
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• pp.302-309
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• 1980

The solubilities of n-propyl bromide in nitrobenzene and in 1,2,4-trichlorobenzene have been measured at 19, 25 and $40^{\circ}C$ in the presence and absence of gallium bromide. When gallium bromide does not exist in the system, the solubility of n-propyl bromide in nitrobenzene is greater than in 1,2,4-trichlorobenzene, indicating a stronger interaction of n-propyl bromide with nitrobenzene than with 1,2,4-trichlorobenzene. In the presence of gallium bromide, 1: 1 complex $n-C_3H_7Br\cdotGaBr_3$ is formed in the solution. The instability constant K of the complex was evaluated. $$n-C_3H_7Br\cdotGaBr_3 \rightleftarrows n-C_3H_7Br ＋ \frac{1}{2Ga_2Br_6 }$$The change of enthalpy, free energy and entropy for the dissociation of the complex were also calculated. It seems that the stabilities of the complex, gallium bromide with alkyl bromide, are relatively concerned with the stabilities of the alkyl ion.

• Journal of the Korean Chemical Society
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• v.15 no.5
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• pp.228-235
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• 1971

The solubilities of n-butyl bromide in nitrobenzene and in 1,2,4-trichlorobenzene have been measured at $19^{\circ},\;25^{\circ},\;and\;40^{\circ}C$ in the presence and absence of gallium bromide. When gallium bromide does not exist in the system, the solubility of n-butyl bromide in nitrobenzene is greater than in 1,2,4-trichlorobenzene, indicating a stronger interaction of n-butyl bromide with nitrobenzene than with 1,2,4-trichlorobenzene. In the presence of gallium bromide, complex of n-butyl bromide with gallium bromide, 1:1 complex, $n-C_4H_9Br{\cdot}GaBr_3$, is formed in the solution. The instability constant K of the complex was evaluated. $n-C_4H_9Br{\cdot}GaBr_3{\rightleftharpoons}n-C_4H_9Br+\frac{1}{2}Ga_2Br_6$ The changes of enthalpy, free energy and entropy for the dissociation of the complex were also calculated.

• Applied Chemistry for Engineering
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• v.18 no.1
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• pp.58-63
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• 2007

The aim of the present work is to study the effect of gallium addition to HZSM-5 on recovery rates of gaseous and liquid products and carbon number distribution in the catalytic cracking of a polymer mixture, LDPE, LLDPE, and EVA copolymer, with a composition similar to that found in real agricultural film wastes. Ga/HZSM-5 system produced a larger amount of aromatic hydrocarbons than HZSM-5. The yield of aromatic compound in vapor phase contact was higher than that in liquid phase contact. The yield of aromatic compound increased with the amount of catalyst and with the reaction temperature of catalyst bed. The effect of gallium addition on the carbon number distribution was not great.

• Analytical Science and Technology
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• v.6 no.1
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• pp.131-139
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• 1993

The separation of gallium and indium from the matrix elements such as zinc and other ions, especially form Fe(III) ion was studied for the determination of trace level of them in zinc ores and zinc blendes by inductively coupled plasma atomic emission spectrometry(ICP-AES). Gallium and indium were extracted from the sample solution with a solvent of tributyl phosphate(TBP). The type and concentration of acid, interferences of other ions, the ratio of aqueous phase to organic phase, TBP concentration, sripping efficiency were optimized for the effective extraction. Gallium and indium were separated from other ions in the 5N hydrochloric acid solution of the samples by the extraction with 100% TBP. In this time, Fe(III) was reduced to Fe(II) with hydroxylamine hydrochloride to prevent its coextraction prior to the main extraxtion. After stripped from organic phase by the back-extraction with 0.02N HCl, they were determined in the aqueous phase by ICP-AES. This method was known to be quantitative from the overall extraction of more than 95%.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.166-166
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• 2010

Recently, TFTs based on amorphous oxide semiconductors (AOSs) such as ZnO, InZnO, ZnSnO, GaZnO, TiOx, InGaZnO(IGZO), SnGaZnO, etc. have been attracting a grate deal of attention as potential alternatives to existing TFT technology to meet emerging technological demands where Si-based or organic electronics cannot provide a solution. Since, in 2003, Masuda et al. and Nomura et al. have reported on transparent TFTs using ZnO and IGZO as active layers, respectively, much efforts have been devoted to develop oxide TFTs using aforementioned amorphous oxide semiconductors as their active layers. In this thesis, I report on the performance of thin-film transistors using amorphous indium gallium zinc oxides for an active channel layer at room temperature. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium gallium zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium gallium zinc oxide was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 1.5V and an on/off ration of > $10^9$ operated as an n-type enhancement mode with saturation mobility with $9.06\;cm^2/V{\cdot}s$. The devices show optical transmittance above 80% in the visible range. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium gallium zinc oxides for an active channel layer were reported. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.6
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• pp.220-225
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• 2020

Gallium oxide nano-powder, the key starting material for IGZO target, is fabricated by gas phase synthesis using a new apparatus consist of reaction, transportation, and collection parts. As a result of gallium metal evaporation above 1150℃, Ga2O3 nano-powders, are successfully synthesized. The SEM images of the synthesized powders displace the spherical shaped powders without severe agglomeration. X-ray diffraction and PSA analysis show that the higher temperature at the reaction part results in the better crystallinity and larger powder size of the synthesized Ga2O3. To see the applicability to IGZO target, Ga2O3 nano-powders synthesized at 1250℃ are mixed with indium oxide and zinc oxide (In2O3 : Ga2O3 : ZnO = 1 : 1 : 1), and then sintered at 1400~1500℃. The highest sintered density of 5.83 g/㎤ (= 91 % of relative density) is achieved when sintered at 1450℃, showing better sinterability compared to the commercially available Ga2O3 powder, which has 5.61 g/㎤ of sintered density at the same condition.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.109-112
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• 2016

We demonstrated an alternative electrically controlled birefringence liquid crystal (ECB-LC) system with ion beam (IB)-irradiated yttrium gallium oxide (YGaO) alignment films using a sol-gel process. The surface roughness of the films was dependent on the annealing temperature; aggregated particles on surface were observed at lower annealing temperatures, whereas a smooth surface could be obtained with higher annealing temperatures. Higher transmittance in the visible region was observed at higher annealing temperatures. The film had an amorphous crystallographic state irrespective of the annealing temperature. Furthermore, ECB-LC cell with our IB-irradiated YGaO film yielded faster response time when compared to ECB-LC cell with rubbed polyimide. Considering the fast response time and high transmittance, the IB-irradiated YGaO-base LC system is a powerful alternative application for the liquid crystal display industry.