• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 추계학술대회 논문집
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• pp.113-116
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• 2003

Confluence buffers and single flux quantum (SFQ) switches are essential components in constructing a high speed superconductive Arithmetic Logic Unit (ALU). In this work, we developed a SFQ confluence buffer and an SFQ switch. It is very important to optimize the circuit parameters of a confluence buffer and an SFQ switch to implement them into an ALU. The confluence buffer that we are currently using has a small bias margin of $\pm$11％. By optimizing it with a Josephson circuit simulator, we improved the design of confluence buffer. Our simulation study showed that we improved bias global margin of 10％ more than the existent confluence buffer. In simulations, the minimal bias margin was $\pm$33％. We also designed, fabricated, and tested an SFQ switch operating in a DC mode. The mask layout used to fabricate the SFQ switch was obtained after circuit optimization. The test results of our SFQ switch showed that it operated correctly and had a reasonably wide margin of $\pm$15％.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 추계학술대회 논문집
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• pp.123-126
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• 2003

RSFQ (Rapid Single Flux Quantum) circuits are used in many practical applications. RSFQ DFFC (Delay Flip-Flop with complementary outputs) circuits can be used in a RAM, an ALU (Arithmetic Logic Unit), a microprocessor, and many communication devices. A DFFC circuit has one input, one switch input, and two outputs (output l and output 2). DFFC circuit functions in such way that output 1 follows the input and output 2 is the complement of the input when the switch input is "0." However, when there is a switch input "1."the opposite output signals are generated. In this work, we have designed an RSFQ DFFC circuit based on 1 ㎄/$\textrm{cm}^2$ niobium trilayer technology. As circuit design tools, we used Xic, WRspice, and Lmeter After circuit optimization, we could obtain the bias current margins of the DFFC circuit to be above 32％.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2002년도 동계연구발표회 논문개요집
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• pp.142-143
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• 2002

최근 RSFQ (Rapid Single Flux Quantum) 기술은 초고속, 극저전력의 초전도 디지털 전자회로의 구현 가능성으로 인해 많은 관심을 모으고 있다.[1] 특히 정밀측정 및 표준 분야에 있어서, 기존의 직류 전압표준 소자에 비해 작동이 간편하며, 다양한 측정기술에 활용할 수 있는 차세대 조셉슨 전압표준용 소자에 응용가능성이 주목받고 있다. 그러나 RSFQ의 이러한 강점들이 제대로 발휘되려면 1 ㎄/$\textrm{cm}^2$ 수준의 고임계전류, 10 $\mu\textrm{m}$ 이하의 미소 조셉슨 접합을 신뢰성 있고 재현성 있게 제작할 수 있어야한다. (중략)

• 한국진공학회:학술대회논문집
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• 한국진공학회 2007년도 제33회 하계학술대회 초록집
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• pp.269-269
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• 2007

• Progress in Superconductivity
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• 제3권1호
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• pp.17-22
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• 2001

Practical implementation of the SFQ technology in most application requires more than single-chip-level circuit complexity. Multiple chips have to be integrated with a technology that is reliable at cryogenic temperatures and supports an inter-chip data transmission speed of tens of GHz. In this work, we have studied two basic issues in building large RSFQ circuits. The first is the reliable inter-chip SFQ pulse transfer technique using Multi-Chip-Module (MCM) technology. By noting that the energy contained in an SFQ pulse is less than an attojoule, it is not very surprising that the direct transmission of a single SFQ pulse through MCM solder bump connectors can be difficult and an innovative technique is needed. The second is the recycling of the bias currents. Since RSFQ circuits are dc current biased the large RSFQ circuits need serial biasing to reduce the total amount of current input to the circuit.

• Nuclear Engineering and Technology
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• 제41권5호
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• pp.729-738
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• 2009

Given the evolution of High-Temperature Gas-cooled Reactor(HTGR) designs, the source terms for licensing must be developed. There are three potential source terms: fission products, actinides in the fuel and tritium in the coolant. It is necessary to provide first an inventory of the source terms under normal operations. An analysis of source terms has yet to be performed for HTGRs. The previous code, which can estimate the inventory of the source terms for LWRs, cannot be used for HTGRs because the general data of a typical neutron cross-section and flux has not been developed. Thus, this paper uses a combination of the MCNP, ORIGEN, and MONTETEBURNS codes for an estimation of the source terms. A method in which the HTR-10 core is constructed using the unit lattice of a body-centered cubic is developed for core modeling. Based on this modeling method by MCNP, the generation of fission products, actinides and tritium with an increase in the burnup ratio is simulated. The model developed by MCNP appears feasible through a comparison with models developed in previous studies. Continuous fuel management is divided into five periods for the feeding and discharging of fuel pebbles. This discrete fuel management scheme is employed using the MONTEBURNS code. Finally, the work is investigated for 22 isotope fission products of nuclides, 22 actinides in the core, and tritium in the coolant. The activities are mainly distributed within the range of $10^{15}{\sim}10^{17}$ Bq in the equilibrium core of HTR-10. The results appear to be highly probable, and they would be informative when the spent fuel of HTGRs is taken into account. The tritium inventory in the primary coolant is also taken into account without a helium purification system. This article can lay a foundation for future work on analyses of source terms as a platform for safety assessment in HTGRs.

• 대한의용생체공학회:의공학회지
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• 제24권3호
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• pp.159-165
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• 2003

뇌자도 측정을 위해 고감도 superconducting quantum interference device (SQUID) 자력계 및 37채널 뇌자도 측정장치를 제작하고 동작특성을 조사하였다. 자속-전압 변환계수 및 변조전압 진폭이 큰 double relaxation oscillation SQUID (DROS)를 사용함으로서 구동회로를 간단히 하였고 안정한 SQUID 동작을 실현할 수 있었다. DROS 자력계를 설계 및 제작한 결과 자력계의 평균 백색잡음은 약 3 fT/√Hz으로서 우수한 자장감도를 가짐을 확인하였다 머리의 평균곡률을 기반으로 37개의 자력계를 반구형으로 배치시켰으며, 외부잡음을 줄이기 위해 신호채널 외에 11개의 기준채널을 설치하여 소프트웨어 방법으로 합성미분계 및 적응필터링을 형성할 수 있도록 하였다 저잡음 듀아를 제작하여 동작특성을 측정한 결과 듀아 열자기 잡음이 자력계 잡음에 비해 무시할 수 있는 수준이었으며, 듀아의 용량은 30 L, 액체헬륨 증발율은 4 L/d이다. 제작된 시스템을 이용하여 청각유발 신호를 측정하고, 디지털 신호처리 및 전류원 국지화 프로그램을 구성하여 전류원의 위치를 추정함으로서 개발된 시스템을 뇌자도 측정에 활용하였다.

• Nuclear Engineering and Technology
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• 제43권3호
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• pp.301-308
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• 2011

The diametral creep of pressure tubes (PTs) in CANDU (CANada Deuterium Uranium) reactors is one of the principal aging mechanisms governing the heat transfer and hydraulic degradation of the heat transport system (HTS). PT diametral creep leads to diametral expansion, which affects the thermal hydraulic characteristics of the coolant channels and the critical heat flux (CHF). The CHF is a major parameter determining the critical channel power (CCP), which is used in the trip setpoint calculations of regional overpower protection (ROP) systems. Therefore, it is essential to predict PT diametral creep in CANDU reactors. PT diametral creep is caused mainly by fast neutron irradiation, temperature and applied stress. The objective of this study was to develop a bundle position-wise linear model (BPLM) to predict PT diametral creep employing previously measured PT diameters and HTS operating conditions. The linear model was optimized using a genetic algorithm and was devised based on a bundle position because it is expected that each bundle position in a PT channel has inherent characteristics. The proposed BPLM for predicting PT diametral creep was confirmed using the operating data of the Wolsung nuclear power plant in Korea. The linear model was able to predict PT diametral creep accurately.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권3호
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• 대한전자공학회논문지SD
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• 제39권3호
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• pp.9-19
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• 2002

본 논문에서는 thermionic emission 모델을 이용하여 SCH 양자우물 레이저 다이오드에 대한 L-I-V특성을 해석적으로 도출하였다. SCH의 bulk 캐리어와 양자우물 속박 캐리어의 관계를 도출하였고, 주입된 전류를 각 영역에서의 캐리어 재결합을 고려한 전류 연속 방정식을 만족하도록 하였다. 또한, high level injection과 전하 중성 조건하에 ambipolar 확산 방정식을 이용하여 캐리어 분포를 고찰하였다. 위 해석적인 모델을 이용하여 계산한 결과, 클래딩 영역의 전위장벽 변화가 전류 전압 특성 변화의 주요 원인으로 나타났다. 또한 thermionic emission에 의한 주입 전류의 forward flux 증가가 캐리어 주입을 증가시키고, 레이저 다이오드의 직렬 저항을 감소시키는 것을 보였다.