• 마이크로전자및패키징학회지
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• 제27권3호
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• pp.77-81
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• 2020

차세대 디스플레이 시장을 선도하기 위해서는 롤러블(rollable), 폴더블(foldable) 디스플레이와 같은 플렉서블(flexible) OLED 디스플레이의 상용화 및 양산화가 필수적이나, 실제 공정 및 굽힘 과정에서 발생하는 극심한 박막 내부 응력 변화로 인한 기계적 파손 문제가 심각한 상황이다. 따라서, 플렉서블 디스플레이 구조에 사용되는 박막 재료의 기계적 물성을 파악하는 것은 제품의 강건한 설계 및 구조 최적화에 필수적이다. 본 논문에서는 물 표면 플랫폼을 이용한 나노 박막 인장 시험법을 적용하여 플렉서블 디스플레이 패널에 적용되는 금속 및 세라믹 박막 소재들의 인장 물성을 정량적으로 측정하였다. 스퍼터링(Sputtering)으로 증착된 Mo, MoTi 나노 박막과, 플라즈마 강화 화학 기상 증착법(Plasma Enhanced Chemical Vapor Deposition, PECVD)으로 증착된 SiN_x 나노 박막의 탄성 계수와 인장 강도 및 연신율을 측정하는 데 성공하였다. 결과적으로 박막의 증착 조건 및 두께에 따라 기계적 물성이 크게 변화할 수 있음을 확인하였으며, 측정된 인장 물성은 기계적으로 강건한 롤러블, 폴더블 디스플레이의 설계를 위한 응력 해석 모델링 데이터로 활용될 수 있을 것으로 기대한다.

• 한국산학기술학회논문지
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• 제9권2호
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• pp.327-332
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• 2008

본 논문에서는 반도체 소자와 디스플레이 패널의 제조공정에 사용되는 플라즈마 식각장비의 RF 정합특성을 개선하기 위한 모듈을 제안하였다. 구동부의 기구 중 베벨기어를 웜기어로 새롭게 설계 제작하고 제어부도 원칩 마이크로 프로세서를 이용하여 재구성하였다. 개발된 모듈은 기존의 정합장치보다 다양한 공정변수에 대한 능동적인 대처가 가능하고, 모터의 흐름현상 등을 개선함으로서 RF 정합특성이 개선되어, 플라즈마 식각공정의 생산성을 향상시킬 수 있음을 보였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• 반도체디스플레이기술학회지
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• 제13권1호
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• pp.7-12
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• 2014

In this study, we investigate the effects of corona-discharge pre-treatment on the properties of carbon nanotubes (CNTs) which are used as flexible transparent electrodes. The CNTs are deposited on PET (polyethylene terephthalate) substrates using a spray coating method. Prior to the deposition of CNTs, the PET substrates are corona-treated by varying the feeding directions of the PET substrate and the numbers of treatments. The variations in the surface morphologies and roughnesses of the PET substrates due to corona-treatment are characterized via atomic force microscopy (AFM). Dynamic contact angles (DCAs) of the corona-treated PET substrates are measured and analyzed as functions of the treatment conditions. Also, the sheet resistances and visible-range transmittances of the CNTs deposited on PET substrates are measured before and after bending test. The experimental results obtained in this study provide strong evidences that the adhesive forces between CNTs and PET substrates can be substantially enhanced by corona-discharge pretreatment.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.288-289
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• 2011

Indium Tin Oxide (ITO) is a typical highly Transparent Conductive Oxide (TCO) currently used as a transparent electrode material. Most widely used deposition method is the sputtering process for ITO film deposition because it has a high deposition rate, allows accurate control of the film thickness and easy deposition process and high electrical/optical properties. However, to apply high quality ITO thin film in a flexible microelectronic device using a plastic substrate, conventional DC magnetron sputtering (DMS) processed ITO thin film is not suitable because it needs a high temperature thermal annealing process to obtain high optical transmittance and low resistivity, while the generally plastic substrates has low glass transition temperatures. In the room temperature sputtering process, the electrical property degradation of ITO thin film is caused by negative oxygen ions effect. This high energy negative oxygen ions(about over 100eV) can be critical physical bombardment damages against the formation of the ITO thin film, and this damage does not recover in the room temperature process that does not offer thermal annealing. Hence new ITO deposition process that can provide the high electrical/optical properties of the ITO film at room temperature is needed. To solve these limitations we develop the Magnetic Field Shielded Sputtering (MFSS) system. The MFSS is based on DMS and it has the plasma limiter, which compose the permanent magnet array (Fig.1). During the ITO thin film deposition in the MFSS process, the electrons in the plasma are trapped by the magnetic field at the plasma limiters. The plasma limiter, which has a negative potential in the MFSS process, prevents to the damage by negative oxygen ions bombardment, and increases the heat(-) up effect by the Ar ions in the bulk plasma. Fig. 2. shows the electrical properties of the MFSS ITO thin film and DMS ITO thin film at room temperature. With the increase of the sputtering pressure, the resistivity of DMS ITO increases. On the other hand, the resistivity of the MFSS ITO slightly increases and becomes lower than that of the DMS ITO at all sputtering pressures. The lowest resistivity of the DMS ITO is $1.0{\times}10-3{\Omega}{\cdot}cm$ and that of the MFSS ITO is $4.5{\times}10-4{\Omega}{\cdot}cm$. This resistivity difference is caused by the carrier mobility. The carrier mobility of the MFSS ITO is 40 $cm^2/V{\cdot}s$, which is significantly higher than that of the DMS ITO (10 $cm^2/V{\cdot}s$). The low resistivity and high carrier mobility of the MFSS ITO are due to the magnetic field shielded effect. In addition, although not shown in this paper, the roughness of the MFSS ITO thin film is lower than that of the DMS ITO thin film, and TEM, XRD and XPS analysis of the MFSS ITO show the nano-crystalline structure. As a result, the MFSS process can effectively prevent to the high energy negative oxygen ions bombardment and supply activation energies by accelerating Ar ions in the plasma; therefore, high quality ITO can be deposited at room temperature.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.305-308
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• 2004

We present a novel process for the ultra low temperature (<150$^{\circ}C$) polycrystalline silicon (ULTPS) TFT for the flexible display applications on the plastic substrate. The sequential lateral solidification (SLS) was used for the crystallization of the amorphous silicon film deposited by rf magnetron sputtering, resulting in high mobility polycrystalline silicon (poly-Si) film. The gate dielectric was composed of thin $SiO_2$ formed by plasma oxidation and $Al_2O_3$ deposited by plasma enhanced atomic layer deposition. The breakdown field of gate dielectric on poly-Si film showed above 6.3 MV/cm. Laser activation reduced the source/drain resistance below 200 ${\Omega}$/ㅁ for n layer and 400 ${\Omega}$/ㅁ for p layer. The fabricated ULTPS TFT shows excellent performance with mobilities of 114 $cm^2$/Vs (nMOS) and 42 $cm^2$/Vs (pMOS), on/off current ratios of 4.20${\times}10^6$ (nMOS) and 5.7${\times}10^5$ (PMOS).

• Journal of Advanced Marine Engineering and Technology
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• 제30권2호
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• pp.304-310
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• 2006

A typical honeycomb sandwich panel consists of two thin, high-strength facings bonded to a thick, light-weight core. Each component by itself is relatively weak and flexible, but when it combined in a sandwich panel they produce a structure that is stiff, strong, and lightweight. To prove the suitability the honeycomb sandwich structure with prepreg, the mechanical properties of the skin materials and honeycomb sandwich structure were evaluated with the static strength tests. Accordingly, the honeycomb sandwich structure made by autoclave process is available for a panel on LCD/PDP assembly line.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1185-1188
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• 2006

Pentacene thin film transistors (OTFTs) on flexible polyimide substrate using electroplated gate electrode and organic/high-k inorganic bilayer gate dielectric layer. Incorporation of thin atomic-layer deposited $HfO_2$ layer on the PVP organic gate dielectric layer reduced the gate leakage and as a result enhanced the current on/off ratio.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.404-405
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• 2007

Tin-doped indium thin film is outstanding material among transparent Conductive Oxide (TCO) materials. ITO thin films show a low electrical resistance(<$10^{-4}\;[{\Omega}{\cdot}m]$) and high transmittance(>80%) in the visible range. ITO thin films usually have been deposited on the glass substrate. In order to apply flexible display, the substrate should have the ability to bend and be deposited without substrate heat. Also properties of ITO thin film depend on what kind of substrate. In this study, we prepared ITO thin film on the polycarbonate (PC) substrate by using Facing Target Sputtering (FTS) system. Before deposition of ITO thin film, PC substrate took plasma surface treatment. The electrical and surface properties of as-deposited thin films were investigated by Hall Effect measurement, UV/VIS spectrometer and the surface property of substrate is investigated by Contact angle measurement.

• 전기학회논문지
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• 제63권10호
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• pp.1412-1416
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• 2014

We report thin-film organic moisture barriers based on polystyrene(PS) laminates deposition by PECVD for an encapsulation of OLEDs. The organic polystyrene thin-film has the benzene ring structure and high hydrophobic characteristics and it was polymerized by PECVD in dry process. Life time properties of Ca test were obtained 32 minutes at the RF 100W process conditions. From the AFM test, the roughness of multi-layer thin-film was more excellent rather than that of a single-layer thin-film. In addition, 5 layers of the multi-layer film properties were obtained 45 minutes. So that the optical and electrical properties were not affected with these plasma polymerized organic thin-film encapsulation. For life time improvement, the inorganic $Al_2O_3$ thin-film were deposited 5nm using ALD atomic layer deposition. The WVTR(Water Vaper Transmission Rate) value of hybrid thin-film encapsulation in the optimum process conditions was resulted by less than $10-3g/m^2/day$. From the results of experiment, plasma polymerized hybrid encapsulation was suggested as the flexible display applications.