• Korean Chemical Engineering Research
• /
• v.50 no.2
• /
• pp.191-197
• /
• 2012

Acrylic terminated polyurethane prepolymers were synthesized by capping the NCO groups of polyurethane prepolymers, prepared from isophorone diisocyanate (IPDI), polycarbonate diol (PCD) and dimethylol propionic acid (DMPA), with pentaerythritol triacrylate (PETA). Subsequently, silylated acrylic terminated prepolymers were prepared by capping the NCO groups of acrylic terminated polyurethane prepolymers with different types of silane coupling agents, glycidoxypropyl trimethoxysilane (GPTMS) or aminopropyl triethoxysilane (APS). The average particle size of pure waterborne polyurethane solution, measured by the dynamic light scattering method, was increased from 14.3 nm to 208.6 nm by adding PETA and APS. Also, the coating film of silylated acrylic terminated waterborne polyurethane showed better abrasion resistance and pencil hardness than that of pure waterborne polyurethane.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.469-472
• /
• 1999

CeO$_2$ thin films have used in wide applications such as SOI, buffer layer, antirflection coating, and gate dielectric layer. CeO$_2$takes one of the cubic system of fluorite structure and shows similar lattice constant (a=0.541nm) to silicon (a=0.543nm). We investigated CeO$_2$films as buffer layer material for nonvolatile memory device application of a single transistor. Aiming at the single transistor FRAM device with a gate region configuration of PZT/CeO$_2$ /P-Si , this paper focused on CeO$_2$-Si interface properties. CeO$_2$ films were grown on P-type Si(100) substrates by 13.56MHz RF magnetron sputtering system using a 2 inch Ce metal target. To characterize the CeO$_2$ films, we employed an XRD, AFM, C-V, and I-V for structural, surface morphological, and electrical property investigations, respectively. This paper demonstrates the best lattice mismatch as low as 0.2 % and average surface roughness down to 6.8 $\AA$. MIS structure of CeO$_2$ shows that breakdown electric field of 1.2 MV/cm, dielectric constant around 13.6 at growth temperature of 200 $^{\circ}C$, and interface state densities as low as 1.84$\times$10$^{11}$ cm $^{-1}$ eV$^{-1}$ . We probes the material properties of CeO$_2$ films for a buffer layer of FRAM applications.

• Journal of Convergence for Information Technology
• /
• v.7 no.5
• /
• pp.53-58
• /
• 2017

In the age of oil exhaustion, low cost, semi-transparent solar cell, the dye-sensitized solar cell (DSC) has attracted significant attention since 1991 of $Gr{\ddot{a}}tzel$ report. To enhance the light-harvest capability of the photoelectric electrode, and efficiency of photoelectric transformation of the DSC, scattering layer of various structure have been proposed to photoelectric electrode materials. The scattering center of scattering layer needs the large titanium dioxide nanoparticles of 250 - 300 nm in diameter. In this study, the large sized $TiO_2$ nanocyrstals of around 300 nm were synthesized using the modified sol-gel process. According to the analysis of XRD and TEM, the synthesized $TiO_2$ nanoparticles exhibit single crystals of anatase phase. The optical transmittance of the synthesized titanium dioxide film prepared by spin coating is around 50% at 550 nm. It is suitable for scattering layer as a scattering center, and expected to enhance the efficiency of photoelectric transformation of the DSC.

• Journal of the Korean Magnetics Society
• /
• v.23 no.1
• /
• pp.12-17
• /
• 2013

Nanocrystalline nickel (Ni) tick films were synthesized by direct current electrodeposition at current density from 1 to $30mA/cm^2$ and pH = 4. The basic composition of the bath, which was prepared by dissolving Ni metal particles in HCl, was 0.2M Ni ions. The effects of the current density on the average grain size of Ni deposits were investigated by XRD and SEM techniques. The results showed that the surface roughness was decreased as the saccharin addition was increased up to 2 g/l. The experimental results showed that the increase in the current density had a considerable effect on the average grain size of the Ni deposits. The perpendicular magnetization was raised as the thickness of coating layer was increased.

• Elastomers and Composites
• /
• v.6 no.1
• /
• pp.71-81
• /
• 1971

The intention of this study is to investigate the properties of polymer blend, NBR/PVC vulcanizates and blending procedures such as roll-mixing temperatures and sequences for polymer blending of NBR and PVC(resin type). The results obtained are as follows: 1. The roll temperature applied for polymer blending is around $150^{\circ}C$. At this temperature region, the degradation of rubber stock, which may be caused by heat, can be minimized and mill processing in practical application in industries can also be facilitated. 2. It is obviously necessary that a small amount of plasticizers should be added to the stock for improving processibility of roll mixing and physical properties. 3. On roll-mixing sequence, it is more effective that PVC compounded with plasticizer is added to NBR milled on hot roll. 4. The vulcanizates of the blends with different degree of polymerization of PVC ale similar to one another in properties. 5. NBR/PVC(70/30) blends shows the better physical characters than eve,-made foreign latex blend except abrasion-resistance. 6. As PVC addition ratio is increased, the physical properties such as resistance to ozone, tear, heat and oil and tensile strength, modulus, hardness have also improved, on the other hand, tension set and rebound character decreased. 7. The curve of ultimate elongation have point of inflection at the ratio of $30\sim40$ part of PVC. 8. While CR is blended, the physical properties such as brittle point, rebound and resistance to oil in high temperature have improved. 9. Polymer blend of NBR and domestic PVC is applied for the industrial utility such as rubber sole and heel, electric wire cover and oil-resistant packing, coating and gasket, printing roll, film for food packing etc.

• The Journal of the Convergence on Culture Technology
• /
• v.6 no.4
• /
• pp.727-732
• /
• 2020

In this paper, when a refractive index grating and a gain grating were simultaneously present in a DFB laser having a wavelength of 1.55 ㎛, a dielectric film coating was applied so that reflection did not occur on the right mirror surface, so that 𝜌_r=0. In case of δL > 0, the threshold gain and the beam distribution in the longitudinal direction and the radiated power ratio P_l/P_r of the oscillation mode were compared for the cases of the phase of 𝜌_l=π and π/2. If the phase of 𝜌_l=π, in order to obtain a low threshold current and high frequency stability, κL should be greater than 8. In the case of the phase of 𝜌_l= π/2, when κL is larger than 4.0, the oscillation gain starts to be lower than when the phase of 𝜌_l=π. In order to lower the threshold current of a oscillation mode and enhance the frequency stability, κL should be greater than 8.

• Polymer(Korea)
• /
• v.36 no.2
• /
• pp.163-168
• /
• 2012

Recently, along with technology development of endoscopic equipment, the stent technology has been developed for the convenience of operation, shortening of recovery times, and reduction of patient's pain. In this study, paclitaxel-eluting metal stents for treatment of biliary benign stenosis were developed through an electrospray-coating method. Polyether-based polyurethane (PELLETHANE 2363-80AE$^{(R)}$)) and paclitaxel were coated onto the surface of a metallic stent and Pluronic F127 was used as an additive. As a result, physicochemical characterization of paclitaxel via SEM, FTIR, contact angle and XRD techniques revealed the information of solid state of paclitaxel-loaded PU film. The in vitro release profile showed a slower release rate with a higher content of paclitaxel.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.05c
• /
• pp.116-119
• /
• 2003

Self-patterning of thin films using photosensitive sol solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. In this study, ferroelectric $Sr_{0.9}Bi_{2.1}Ta_2O_9$(SBT) and $La_{0.5}Sr_{0.5}CoO_3$(LSCO)thin films have been prepared by spin coating method using photosensitive sol solution. $Sr(OC_2H5)_2$, $Bi(TMHD)_3$ and $Ta(OC_2H)_5)_5$ were used as starting materials for SBT solution and $La(OCH_2CH_2OCH_3)_3$, $Sr(OC_2H_5)_2$, $CO(OCH_2CH_2OCH_3)_2$ were used for LSCO solution. Solubility difference by UV irradiation on LSCO thin film allows to obtain a fine patterning due to M-O-M bond formation. The lowest resistivity($4{\times}10^{-3}{\Omega}cm$) of LSCO thin films was obtained by annealing at $740^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.376-376
• /
• 2007

In Liquid Crystal Display (LCD) manufacturing, the organic over coat materials over coat materials for insulation layer of color filter with acryl ate was widely used. Therefore, we approach that the organic overcoat material can use to insulation layer for color filter and liquid crystal (LC) alignment layer in this research. The LC aligning capabilities was successful stuided for the first time. The organic overcoat layer and polymer layer was coated by spin-coating. In order to characterize the LC alignment, electric optic and residual DC and atomic force microscopy (AFM) image was used. The good LCD aligning capabilities treated on the organic overcoat thin film surfaces with ion beam exposure of $45^{\circ}$ above ion beam energy density of 1200 eV can be achieved. Also the good LCD alignment capabilities treated polymer on surfaces with ion beam exposure of $45^{\circ}$ above ion beam energy density of 1800 eV can be achieved. Comparing electro-optical characteristics between the Polyimide (PI) and the overcoat, the resultant transmittance of the overcoat considerably matched that of the PI and the residual DC also exhibited similar features with the PI.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.502-502
• /
• 2007

Current thin film process using memory device fabrication process use expensive processes such as manufacturing of photo mask, coating of photo resist, exposure, development, and etching. However, direct printing technology has the merits about simple and cost effective processes because inks are directly injective without mask. And also, this technology has the advantage about fabrication of fine pattern line on various substrates such as PCB, FCPB, glass, polymer and so on. In this work, we have fabricated the fine and thick metal pattern line for the electronic circuit board using metal ink contains Ag nano-particles. Metal lines are fabricated by two types of printing methods. One is a conventional printing method which is able to quick fabrication of fine pattern line, but has various difficulties about thick and high resolution DPI(Dot per Inch) pattern lines because of bulge and piling up phenomenon. Another(Second) methods is sequential printing method which has a various merits of fabrication for fine, thick and high resolution pattern lines without bulge. In this work, conductivities of metal pattern line are investigated with respect to printing methods and pattern thickness. As a result, conductivity of thick pattern is about several un.