• Transactions on Electrical and Electronic Materials
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• v.5 no.1
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• pp.1-6
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• 2004

Zinc sulfide is a semiconductor with wide band gap and high refractive index and hence promising material to be used as ARC on commercial silicon solar cells. Uniform deposition of zinc sulfide (ZnS) by using chemical bath deposition (CBD) method over a large area of silicon surface is an emerging field of research because ZnS film can be used as a low cost antireflection coating (ARC). The main problem of the CBD bath process is the huge amount of precipitation that occurs during heterogeneous reaction leading to hamper the rate of deposition as well as uniformity and chemical stoichiometry of deposited film. Molar concentration of thiorea plays an important role in varying the percentage of reflectance and refractive index of as-deposited CBD ZnS film. Desirable rate of film deposition (19.6 ${\AA}$ / min), film uniformity (Std. dev. < 1.8), high value of refractive index (2.35), low reflectance (0.655) have been achieved with proper optimization of ZnS bath. Decrease in refractive index of CBD ZnS film due to high temperature treatment in air ambiance has been pointed out in this paper. Solar cells of conversion efficiency 13.8 ％ have been successfully achieved with a large area (103 mm ${\times}$ 103 mm) mono-crystalline silicon wafers by using CBD ZnS antireflection coating in this modified approach.

• Journal of the Semiconductor & Display Technology
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• v.5 no.2 s.15
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• pp.41-46
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• 2006

Wet etching process in recent semiconductor manufacturing is devided into batch and single wafer type. Batch type wet etching process provides more throughput with poor etching uniformity compared to single wafer type process. Single wafer process achieves better etching uniformity by boom-swing injected chemical on rotating wafer. In this study, etching characteristics of $SiO_2$ layer at room and elevated temperature is evaluated and compared. The difference in etching rate and uniformity of each condition is identified, and the temperature profile of injected chemical is theoretically calculated and compared to that of experimental result. Better etching uniformity is observed with single wafer tool with boom-swing injection compared to single wafer process without boom-swing or batch type tool.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.244-246
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• 1991

Recently, a study on LB ultra thin film of molecular size is widely performed. To make use of LB ultra thin film in engineering applications, it is important to investigate how uniformly Langmuir film is deposited on a substrate. In this paper, to confirm the uniformity of film deposition, the relation between the monolayer numbers deposited and its ratio is investigated by deposition of the Y type and Hetero type LB film. If films are deposited ideally, the deposition ratio will become 1.0. From the experimental results, it can be suggested that the deposition of LB film is done well, as we obtained an approximate value 1.0 by the calculation of deposition ratio of L film area and LB film deposition area.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.8
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• pp.92-99
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• 2002

This work investigated the optimal condition for an uniform deposition growth rate in the vertical cylindric CVD chamber. Heat transfer, surface chemical reaction and mass diffusion in the flow field of CVD chamber h,id been computed using Fluent v5.3 code. A SIMPLE based finite Volume Method (FVM) was adopted to solve the fully elliptic equations for momentum, temperature and concentration of a chemical species. The numerical analysis results show good agreements with the measurements obtained by N. Yoshikawa. The results obtained by the numerical analysis showed that the film growth rate in the center of a susceptor is increasing, as the inner flow approaches to the forced convection. To the contrast, as it approaches to the natural convection, that in the outside of a susceptor is increasing. As the Reynolds number increases, the uniformity may not hold due to the larger temperature gradient at a susceptor surface. Therefore, when the temperature gradient on the surface of a susceptor is zero, the film growth rate becomes uniform on most surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.192-193
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• 2006

A 16Mb ITIC FeRAM device was fabricated with BLT capacitors. The average value of the switchable 2 polarization obtained m the 32k-array (unit capacitor size: 068 ${mu}m^2$) capacitors was about 16 ${\mu}C/cm^2$ at 3V and the uniformity within an 8-inch wafer was about 2.8%. But a lot of cells were failed randomly during the measuring the bit-line signal of each cell. It was revealed that the Grain size and orientation of the BLT thin film were severely non-uniform. Therefore, the uniformity of the grain size and orientation was improved by changing the process conditions of post heat treatment. The temperature of nucleation step was the very effective on varying the microstructure of the BLT thin film. The optimized temperature of the nucleation step was $560^{\circ}C$.

• Journal of the Semiconductor & Display Technology
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• v.12 no.4
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• pp.39-44
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• 2013

In the semiconductor heat-treatment process, the temperature uniformity determines the film quality of a wafer. This film quality effects on the overall yield rate. The heat transfer of the wafer surface in the heat-treatment process equipment is occurred by convection and radiation complexly. Because of this, there is the nonlinearity between the wafer temperature and reactor. Therefore, the accurate prediction of temperature on the wafer surface is difficult without the direct measurement. The thermal camera and the T/C wafer are general ways to confirm the temperature uniformity on the heat-treatment process. As above ways have limit to measure the temperature in the precise domain under the micro-scale. In this study, we developed the thin film type temperature sensor using the MEMS technology to establish the system which can measure the temperature under the micro-scale. We combined the experiment and numerical analysis to verify and calibrate the system. Finally, we measured the temperature on the wafer surface on the semiconductor process using the developed system, and confirmed the temperature variation by comparison with the commercial T/C wafer.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.145-145
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• 2000

Large area YBCO - films are series produced by thermal co-evaporation using a deposition scheme known as Garching process, which allows intermittent oxygen supply in a high vacuum ambient by an oxygen cup spaced closely underneath the moving substrates. The deposition area of 9" diameter is capable to handle very large wafers up to 8" diam. or numerous smaller wafers. The large distance between substrates and boat sources and an elaborate heater design guarantee excellent film uniformity over the entire deposition area. YBCO - films deposited by this technique are commercially fabricated for a variety of applications - the most prominent are resistive fault current limiters and microwave filters for mobile or satellite communications. IMUX and OMUX - filters are currently space qualined by Robert Bosch GmbH and are expected to be launched and installed on an experimental platform of the international space station ALPHA in 2001. Both of the above applications require quite different film specifications on the one hand, but at the same time extremely high uniformity and reproducibility on the other hand, since hundreds of YBCO - films are combined to large systems or have to be approved for manned space missions. The success of such projects is direct evidence that the technique of thermal evaporation is readily capable to meet these high demands and has become the major deposition technique to support the emerging HTS market.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.6 s.171
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• pp.144-151
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• 2005

Spin coater is regarded as a major module rotating at high speed to be used build up polymer resin thin film layer fur bonding process of GaAs wafer. This module is consisted of spin unit for spreading uniformly, align device, resin spreading nozzle and et. al. Specially, spin unit which is a component of module can cause to vibrate and finally affect to the uniformity of polymer resin film layer. For the stability prediction of rotation velocity and uniformity of polymer resin film layer, it is very important to understand the dynamic characteristics of assembled spin coater module and the dynamic response mode resulted from rotation behavior of spin chuck. In this paper, stress concentration mode and the deformed shape of spin chuck generated due to angular acceleration process are presented using analytical method for evaluation of structural safety according to the revolution speed variation of spin unit. And also, deformation form of GaAs wafer due to dynamic behavior of spin chuck is presented fur the comparison of former simulated results.

• International Journal of Precision Engineering and Manufacturing
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• v.7 no.1
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• pp.51-56
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• 2006

A computer code was developed to simulate both the thermal stresses introduced during the post-filling stage and the in-plane deformation after ejection process by finite element method based on the plane stress theory. The computer simulation was applied to the mold design of a 2 inch light guide plate (LGP) for thin film transistor (TFT)-liquid crystal displays (LCD). With injection molding experiments based on the design of experiments (DOE) technique, the influences of the processing conditions in injection molding on brightness and uniformity of the LGP were investigated, and the optimal processing parameters were selected to increase the brightness and uniformity. The verification experiment showed that the brightness and uniformity of the LGP were increased dramatically under the selected optimal processing conditions.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.1068-1071
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• 2001

Recently, the minimum line width shows a tendancy to decrease and the multi-level to increase in semiconductor. Therefore, a planarization technique is needed, which chemical polishing(CMP) is considered as one of the most important process. CMP accomplishes a high polishing performance and a global planarization of high quality. But there are several defects in CMP such as microscratches, abrasive contaminations, and non-uniformity of polished wafer edges. Spin Etching can improve the defects of CMP. It uses abrasive-free chemical solution instead of slurry. Wafer rotates and chemical solution is simultaneously dispensed on a whole surface of the wafer. Thereby chemical reaction is occurred on the surface of wafer, material is removed. On this study, TEOS film is removed by CMP and Spin Etching, the results are estimated at a viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU).