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Numerical Analysis for Optimization of Film Uniformity and Deposition Grow Rate in the Vertical Cylindric Reactor  

Kim, Jong-Hui (Korea Institute of Energy Research)
Kim, Hong-Je (Korea Institute of Energy Research)
O, Seong-Mo (Dept.of Mechanical Engineering, Wonkwang University)
Lee, Geon-Hwi (Dept.of Mechanical Engineering, Wonkwang University)
Lee, Bong-Gu (Dept.of Mechanical Engineering, Wonkwang University)
Publication Information
Journal of the Korean Society for Precision Engineering / v.19, no.8, 2002 , pp. 92-99 More about this Journal
Abstract
This work investigated the optimal condition for an uniform deposition growth rate in the vertical cylindric CVD chamber. Heat transfer, surface chemical reaction and mass diffusion in the flow field of CVD chamber h,id been computed using Fluent v5.3 code. A SIMPLE based finite Volume Method (FVM) was adopted to solve the fully elliptic equations for momentum, temperature and concentration of a chemical species. The numerical analysis results show good agreements with the measurements obtained by N. Yoshikawa. The results obtained by the numerical analysis showed that the film growth rate in the center of a susceptor is increasing, as the inner flow approaches to the forced convection. To the contrast, as it approaches to the natural convection, that in the outside of a susceptor is increasing. As the Reynolds number increases, the uniformity may not hold due to the larger temperature gradient at a susceptor surface. Therefore, when the temperature gradient on the surface of a susceptor is zero, the film growth rate becomes uniform on most surface.
Keywords
Chemical Vapor Deposition; Deposition Growth Rate; Uniformity; Optimization; Finite Volume Method; Convection;
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