Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.11a
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- Pages.192-193
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- 2006
Thermal Process Effects on Grain Size and Orientation in $(Bi,La)_4Ti_3O_{12}$ Thin Film Deposited by Spin-on Method
스핀 코팅법으로 증착한 $(Bi,La)_4Ti_3O_{12}$ 박막의 후속 열공정에 따른 입자 크기 및 결정 방향성 변화
- Kim, Young-Min (Chung-Buk Univ.) ;
- Kim, Nam-Kyeong (Hynix Semiconductor Inc.) ;
- Yeom, Seung-Jin (Hynix Semiconductor Inc.) ;
- Jang, Gun-Eik (Chung-Buk Univ.) ;
- Ryu, Sung-Lim (Chungju Univ.) ;
- Kweon, Soon-Yong (Chungju Univ.)
- Published : 2006.11.09
Abstract
A 16Mb ITIC FeRAM device was fabricated with BLT capacitors. The average value of the switchable 2 polarization obtained m the 32k-array (unit capacitor size: 068
Keywords
- $(Bi,La)_4Ti_3O_{12}$;
- Grain Size;
- Crystallographic orientation;
- Ferroelectric properties;
- Spin-on method