• Title/Summary/Keyword: film structure

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Early Stage Growth Structure and Stress Relaxation of CoCrPt Thin Films on Spherically Modulated Polymer Surface

  • Kim, Sa-Rah;Jeong, Jun-Ho;Shin, Sung-Chul;Son, Vo Thanh;Jeon, Bo-Geon;Kim, Cheol-Gi;Jeong, Jong-Ryul
    • Journal of Magnetics
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    • v.15 no.1
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    • pp.12-16
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    • 2010
  • Combined study of in-situ stress measurements and atomic force microscopy (AFM) revealed drastic stress relaxation in the CoCrPt and PS(styrene)-PVP(vinyl pyridine) polymer hybrid structure that was closely related to the growth structure of the film. We have observed not only no large initial growth stress at the initial stages of film growth but also twice smaller stress in magnitude with opposite sign in the CoCrPt/PS-PVP/Si sample. The microstructural studies using AFM at the various film growth stages revealed that the film growth structure plays an important role in the stress relaxation mechanism of CoCrPt films on a corrugated polymer surface.

Effect of the MgO buffer layer for MFIS structure using the BLT thin film (BLT 박막을 이용한 MFIS 구조에서 MgO buffer layer의 영향)

  • Lee, Jung-Mi;Kim, Kyoung-Tae;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.23-26
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    • 2003
  • The BLT thin film and MgO buffer layer were fabricated using a metalorganic decomposition method and the DC sputtering technique. The MgO thin film was deposited as a buffer layer on $SiO_2/Si$ and BLT thin films were used as a ferroelectric layer. The electrical of the MFIS structure were investigated by varying the MgO layer thickness. TEM showsno interdiffusion and reaction that suppressed by using the MgO film as abuffer layer. The width of the memory window in the C-Y curves for the MFIS structure decreased with increasing thickness of the MgO layer Leakage current density decreased by about three orders of magnitude after using MgO buffer layer. The results show that the BLT and MgO-based MFIS structure is suitable for non-volatile memory FETs with large memory window.

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Phase Separated Structure and Electro-optical Properties of the (Polymer/Liquid Crystal) Composite Films ((고분자/액정) 복합막의 상분리구조와 전기광학 특성)

  • Park, K.S.;Noh, C.H.;SaKong, D.S.;Nam, K.D.;Kajiyama, T.
    • Journal of the Korean Applied Science and Technology
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    • v.12 no.2
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    • pp.29-39
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    • 1995
  • The phase separated structure and the electro-optical properties of the (polymer/liquid) crystal : LC) composite film strongly depended on the weight fraction of LC in it. The continuous LC phase was formed in a three-dimensional polymer network when the LC weight fraction was above 40wt%. The aggregation structure of the composite film could be controlled by controlling the solvent evaporation velocity during the film preparation process. The smaller LC domains or channels were formed in the case of the faster solvent evaporation velocity. The composite film exhibited reversible light scattering-light transmission switching upon electric field -OFF and -ON states, respectiverly. The light scattering properties of the composite film strongly depended on the spatial distortion of the nematic directors as well as the mismatch in refractive indices between matrix polymer and LC.

A Study on the Relationship between Oxygen and Carrier Concentration in a GZO Film on an Amorphous Structure (GZO 박막에 대한 비정질 구조에 따른 산소공공과 전하농도의 연관성에 대한 연구)

  • Kim, Do Hyoung;Kim, Hong Bae
    • Journal of the Semiconductor & Display Technology
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    • v.14 no.4
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    • pp.25-29
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    • 2015
  • In this study, RF magnetron sputtering was used to investigate the relationship between oxygen vacancy and carrier concentration in a GZO film on an amorphous structure. RF power was fixed at 50W and Ar flow was changed on a glass plate to create a thin film at room temperature. The transmittance of Al-adopted amorphous GZO was measured at 85% or higher; therefore, the transmittance was shown to be outstanding in all films. The hall mobility was also shown to be higher at the film showing the high transmittance at a short-wavelength, whereas the optical energy gap was shown to be higher at the film with high oxygen vacancy. The oxygen vacancy at the amorphous oxide semi-conductor increased the optical energy gap while it was not directly involved in increasing the mobility. The oxygen vacancy increases the carrier concentration while lowering the quality of amorphous structure; such factor, therefore affected the mobility. The increase of amorphous property is a direct way to increase the mobility of amorphous oxide semi-conductor.

Influence of Electrolyte on the Shape and Characteristics of TiO2 during Anodic Oxidation of Titanium (Titanium 양극산화시 TiO2 의 형상 및 특성에 미치는 전해질의 영향)

  • Yeji Choi;Chanyoung Jeong
    • Corrosion Science and Technology
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    • v.22 no.3
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    • pp.193-200
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    • 2023
  • Titanium alloy (grade-4) is commonly used in industrial and medical applications. To improve its corrosion resistance and biocompatibility for medical use, it is necessary to form a titanium oxide film. In this study, the morphology of the oxide film formed by anodizing Ti-grade 4 using different electrolytes was analyzed. Wetting properties before and after surface modification with SAM coating were also observed. Electrolytes used were categorized as A, B, and C. Electrolyte A consisted of 0.3 M oxalic acid and ethylene glycol. Electrolyte B consisted of 0.1 M NH4F and 0.1 M H2O in ethylene glycol. Electrolyte C consisted of 0.07 M NH4F and 1 M H2O in ethylene glycol. Samples B and C exhibited a porous structure, while sample A formed a thickest oxide film with a droplet-like structure. AFM analysis and contact angle measurements showed that sample A with the highest roughness exhibited the best hydrophilicity. After surface modification with SAM coating, it displayed superior hydrophobicity. Despite having the thickest oxide film, sample A showed the lowest insulation resistance due to its irregular structure. On the other hand, sample C with a thick and regular porous oxide film demonstrated the highest insulation resistance.

A Comparative Study of Chinese and Western Film Colors (중국과 서양 영화의 색채 비교 연구)

  • Wu, Xiao-Hui
    • Journal of Korea Entertainment Industry Association
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    • v.13 no.4
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    • pp.131-138
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    • 2019
  • The film enters the color film from black and white, and the screen image changes qualitatively. The color in the film not only has the reproduction function of the restoration object like the objective appearance, but also has the function of conveying different subjective emotions. It can express the color and can't express it. The artistic effect conveys the information content that the story itself can't convey, so the color of the film becomes an important part of the film language. The color in the film is presented on the screen in the form of single-screen color, scene color, full-color color tone, and various color chains designed according to different contradictions and conflicts. Because the film art and art means are assembled by montage, he colors in the picture also form a montage form. People call it "color montage". People's subjective nature of color criticism and acceptance of color language also depend on various local tones. The accurate expression of the relationship, the unique attribute of color determines that the color must enter the structural state in order to express its unique charm. The color of the film only has the real aesthetic value when it enters the level of "color structure". This paper studies the color of Chinese and Western films from the differences between the color thinking of Chinese and Western film directors and the cultural implication of Chinese and Western film colors. The western film director emphasizes the structure of color and pays attention to the use of tonal montage to convey the characters. Emotions reflect the characteristics of a subjective color. Beginning with the "fifth-generation" director of Chinese film, the new journey of film color language has been opened. In the process of blending love and scenery, the film style of "image-in-one" has been achieved.

Thin Film Si-Ge/c-Si Tandem Junction Solar Cells with Optimum Upper Sub- Cell Structure

  • Park, Jinjoo
    • Current Photovoltaic Research
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    • v.8 no.3
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    • pp.94-101
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    • 2020
  • This study was trying to focus on achieving high efficiency of multi junction solar cell with thin film silicon solar cells. The proposed thin film Si-Ge/c-Si tandem junction solar cell concept with a combination of low-cost thin-film silicon solar cell technology and high-efficiency c-Si cells in a monolithically stacked configuration. The tandem junction solar cells using amorphous silicon germanium (a-SiGe:H) as an absorption layer of upper sub-cell were simulated through ASA (Advanced Semiconductor Analysis) simulator for acquiring the optimum structure. Graded Ge composition - effect of Eg profiling and inserted buffer layer between absorption layer and doped layer showed the improved current density (Jsc) and conversion efficiency (η). 13.11% conversion efficiency of the tandem junction solar cell was observed, which is a result of showing the possibility of thin film Si-Ge/c-Si tandem junction solar cell.

A Study on Design Method of Sequential Landscape through the Application of Visual Structure and Screening Techniques of Film Art (영화의 시각적 구조와 표현기법의 응용을 통한 연속적 경관의 설계방법에 관한 연구)

  • 우대준;김영대
    • Journal of the Korean Institute of Landscape Architecture
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    • v.23 no.4
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    • pp.97-110
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    • 1996
  • This study is about the application of visual structure and presentation of film as one of new methods for design of sequential landscape. The primary objective of the study is to present the basis of applicable and reasonable D니. In applying components of film to DSL, if it is compared with sequential landscape, the film is collection of shots while sequential landscape is accumulation of sceneries. Film and sequential landscape give us a whole meaning different from the meaning itself of a shot or scenery in its experience. The study build a tentative technique of DSL which has the following stages : 1) Goal setting and making out a scenario 2) Analysis and investigation 3) Selection process of definite form 4) Drawing up conti., sketch and notes, It is expected that the technique presented in this study could be a basis for further study of DSL.

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A Study on the Characteristics of TiN film deposited using Reactive Magnetron Sputter ion Plating (Reactive Magnetron Sputter ion Plating법으로 증착된 TiN 박막의 특성에 관한 연구)

  • 이민구;김흥회;김선재;이창규;김영석
    • Journal of the Korean institute of surface engineering
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    • v.33 no.2
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    • pp.115-125
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    • 2000
  • TiN films were deposited onto Stellite 6B alloy (Co base) by the reactive magnetron sputter ion plating. As the bias increases, TiN film changes from columnar structure to dense structure with great hardness and smooth surface due to densification and resputtering by ion bombardment. The content of oxygen and carbon impurities in the TiN film decreases greatly when the substrate bias is applied. The preferred orientation of the TiN films changes from (200) to (111) with decreasing $N_2$/Ar ratio, and from (200) to (111) and then (220) with increasing the substrate bias. The change of the preferred orientation is discussed in terms of surface energy and strain energy which are related to the impurity contents and the ion bombardment damage. The hardness of the TiN film increases with increasing compressive stress generated in the film by virtue of ion bombardment. It becomes as high as up to 3500kgf/mm$^2$ when an appropriate substrate bias is applied.

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IR Transmittance and Surface Structure of Diamond Film Polished by Thermomechanical Method (열기계적으로 연마한 다이아몬드 막의 적외선 투과도 및 표면구조)

  • 정상기;최시경;정대영;최한메;권순용
    • Journal of the Korean Ceramic Society
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    • v.32 no.6
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    • pp.697-702
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    • 1995
  • The rough growth surfaces of diamond films fabricated by the hot filament CVD were polished using thermomechanical polishing method. And then, its application to the optical windows was discussed through the measurement of transmittance in the range of infrared radiation and analysis of surfaces structure. The results were compaerd with those of the films polished with conventional mechanicla polishing. The transmittance of the mechanically polished film reached 57~66% over the whole range from 500 to 4000 cm-1. But the transmittance of the film polished with thermomechanical polishing method was reduced below 35%. This decrease in transmittance was due to both the graphitization of diamond on the polished surface and the growth of $\beta$-SiC at diamond/Si interface during polishing. The residual Fe in hte thermomechanically polished surface was confirmed by SIMS analysis. This Fe played the role of the graphitization of near surface region of the diamond film.

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