• 제목/요약/키워드: film structure

검색결과 3,903건 처리시간 0.035초

Sol-Gel Processing for Preparation of Metal Oxide Films

  • Korobova Natalya;Soh, Dea-Wha
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.259-264
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    • 2000
  • Systematic research of metal alkoxide electrophoretic deposition has been developed. The formation mechanism of electrophoretic deposits has been offered. The structure study of dry and heat-treated electrophoretic deposits has been established. The concrete examples of one and bi-component oxide thin film formation were considered. The new approaches for thin film technology have developed on various substrates of different shapes and sizes. The correlation between thin film structure, mechanism of their formation, and physico-chemical properties has been determined.

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PLT(28) 박막의 제작과 전기적 특성에 관한 연구 (Preparation and Electrical properties of the PLT(28) Thin Film)

  • 강성준;정양희
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2002년도 추계종합학술대회
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    • pp.784-787
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    • 2002
  • Sol-gel 법으로 PLT(28) 박막을 제작하여, 박막의 구조적 및 전기적 특성을 조사하였다. XRD와 AFM 관찰결과, $650^{\circ}C$에서 annealing 된 박막은 완전한 perovskite 구조를 가지며 표면거칠기도 22$\AA$ 으로 양호한 값을 나타내었다. Pt/TiO$_{x}$SiO2/Si 기판위에 PLT(28) 박막을 증착시켜 planar 형태의 캐패시터를 제작하여 전기적 특성을 조사하였다. 그 결과, PLT(28) 박막은 상유전상을 가지며,10kHz에서 비유전률과 유전손실은 761 과 0.024 이었다. 또, 5V에서 전하축적 밀도와 누설전류밀도는 각각 134fC/$\mu$m2 과 1.01 $\mu$A/cm2 이었다. 이로부터, PLT(28) 박막이 차세대 DRAM 용 캐패시터 절연막으로 사용될 수 있는 유망한 재료라고 생각된다.다.

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Ag가 도핑된 칼코게나이드 $As_{40}Ge_{10}Se_{15}S_{35}$ 박막의 광분해, 광확산특성 및 홀로그래픽 격자형성 (Photodissolution, photodiffusion characteristics and holographic grating formation on Ag-doped $As_{40}Ge_{10}Se_{15}S_{35}$ chalcogenide thin film)

  • 정홍배
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제55권10호
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    • pp.461-466
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    • 2006
  • In the present work, we investigated the photodissolution and photodiffusion effect on the interface of Ag/chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film by measuring the absorption coefficient, the optical density, the resistance change of Ag layer. It was found that the photodissolutioniphotodiffution ratio depends on the magnitude of photon energy absorbed in the chalcogenide thin film and the depth of photodiffution was proportional to the square root of the exposed time. Also, we have investigated the holographic grating formation with P-polarization states on chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film and $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film. Holographic gratings have been formed using He-Ne laser (632.8 nm) which have a smaller energy than the optical energy gap, $E_g\;_{opt}$ of the film, i. e., an exposure of sub-bandgap light $(h{\upsilon} under P-polarization. As the results, we found that the diffraction efficiency on $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film was more higher than that on single $As_{40}Ge_{10}Se_{15}S_{35}$ thin film. Also, we obtained that the maximum diffraction efficiency was 0.27 %, 1,000 sec on $As_{40}Ge_{10}Se_{15}S_{35}\;(1{\mu}m)/Ag$ (10 nm) double layer structure thin film by (P: P) polarized recording beam. It will offer lots of information for the photodoping mechanism and the analyses of chalcogenide thin films.

계면구조와 박막의 접착 (Interface Structure and Thin Film Adhesion)

  • 이호영;김성룡
    • 접착 및 계면
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    • 제3권4호
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    • pp.37-43
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    • 2002
  • 표면 개질 또는 박막 공정을 위하여 많은 박막 증착 기술들이 지속적으로 개발, 발전되어 왔다. 그러나, 증착된 박막의 접착성이 불량하여 사용 도중에 기판으로부터 분리된다면 아무리 좋은 성질을 가진 박막일지라 할지라도 제대로 사용될 수 없을 것이다. 이처럼 박막의 접착성은 박막의 기능 못지않게 매우 중요하다. 본 원고에서는 계면 구조와 박막의 접착력 사이의 관계와 박막의 접착력에 영향을 주는 인자들을 살펴보았다. 박막의 접착력에 영향을 주는 인자들에는 박막 및 기판의 화학 조성 및 구조, 박막과 기판의 반응성, 기판의 표면 거칠기, 박막의 잔류 응력 등과 같은 내부 인자와 하중, 온도, 습도, 부식환경 등의 외부 인자가 있는데, 이들을 어떻게 조절하여 박막의 접착력을 향상 또는 유지시키는 방법을 알아보았다.

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근적외선 반사 박막 특성 연구 (Study on characteristics of thin films for reflection of near infrared light)

  • 정연길;박현식
    • 한국산학기술학회논문지
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    • 제16권6호
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    • pp.4121-4124
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    • 2015
  • 에너지 절감 유리창에서는 근적외선 차단 기능이 요구되고 있다. 본 연구에서는 근적외선 반사를 위한 광학 박막의 설계, 제작 및 광학적 특성이 연구 되었다. 광학 박막은 저굴절률막과 고굴절률막의 적층 박막 구조로 설계하였다. 설계구조에 따라 RF 스퍼터링 방법을 이용한 $SiO_2$$TiO_2$ 박막의 증착 실험이 수행되었고 파워에 따른 증착 조건 파라미터에 따라서 제작된 스퍼터링 박막의 특성이 분광타원기, 원자현미경, 분광기로 분석되었다. 적층박막 구조의 설계는 $SiO_2$$TiO_2$의 고굴절률 박막/저굴절률 박막/고굴절률 박막의 적층 구조로서 근적외선 차단 다층막이 설계되었고 시뮬레이션 되었다. 시뮬레이션 결과 파장대역 930nm에서 1682nm의 범위에서 반사율30%이상이 관찰되었다. 시뮬레이션 결과를 토대로 제작된 삼층 구조의 박막은 파장 대역이 930nm에서 1525nm범위 대역에서 반값 전폭의 반사율 33%이상을 구현할 수 있었다.

Story of the monkey: The modular narrative and its origin of

  • Wang, Lei
    • 만화애니메이션 연구
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    • 통권29호
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    • pp.61-75
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    • 2012
  • The essay explores the narrative structure of the classical Chinese feature animation, (a.k.a. Da Nao Tian Gong, 1964). The film is presented with a modular structure which is quite unique compared with the storytelling in feature animated films from other cultures, but could be connected with the tradition narrative structure in Chinese Zhanghui style novels in Ming and Qing Dynasty. By relating the original text of the story, the 16th century novel Journey to the West (a.k.a. Xi You Ji), with the film , the essay addresses the question of how the narrative tradition in Chinese classical literature influenced the Uproar in Heave for its segment narrative structure, character driven storytelling strategy and mirrored repetitive 2 plot lines. The subject of this essay is even more significant after the restored 3D version of was re-released in the spring of 2012 and became one of the best-selling animated feature film in the history of the country.

Irradiation Induced Modifications of Amorphous Phase in GeTe Film

  • Park, Seung Jong;Jang, Moon Hyung;Ahn, Min;Yang, Won Jun;Han, Jeong Hwa;Cho, Mann-Ho
    • Applied Science and Convergence Technology
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    • 제24권3호
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    • pp.60-66
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    • 2015
  • The modified amorphous GeTe formed by pulsed laser irradiation in as-grown GeTe has been analyzed in terms of variations of local bonding structure using extended x-ray absorption fine structure (EXAFS). The modified GeTe film has octahedral-like Ge-Te bonding structure that can be effectively induced by irradiation process. The EXAFS data clearly shows that the irradiation can lead to reduction of the average coordination number. Variations in the transition temperature for the irradiated film during crystallization can be described by the presence of octahedral-like local structure.

누설전류 감소를 위한 Bird's Beak 공정을 이용한 다결정 실리콘 박막 트랜지스터의 구조 연구 (A Researching about Reducing Leakage Current of Polycrystalline Silicon Thin Film Transistors with Bird's Beak Structure)

  • 이진민
    • 한국전기전자재료학회논문지
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    • 제24권2호
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    • pp.112-115
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    • 2011
  • To stabilize the electric characteristic of Silicon Thin Film Transistor, reducing the current leakage is most important issue. To reduce the current leakage, many ideas were suggested. But the increase of mask layer also increased the cost. On this research Bird's Beak process was use to present element. Using Silvaco simulator, it was proven that it was able to reduce current leakage without mask layer. As a result, it was possible to suggest the structure that can reduce the current leakage to 1.39nA without having mask layer increase. Also, I was able to lead the result that electric characteristic (on/off current ratio) was improved compare from conventional structure.

E-Beam Evaporated Co/Cr and Co/Mo Multilayer Thin Films

  • Lee, S.K;Nam, I.T;Hong, Y.K
    • Journal of Magnetics
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    • 제4권2호
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    • pp.69-72
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    • 1999
  • Magnetic properties and crystallographic structure of e-beam evaporated Co/Cr and Co/Mo multilayer thin films were investigated using VSM and XRD. Co/Cr and Co/Mo multilayer thin films are confirmed as an alternating layered structure. The structure of films with thicker Co layers than Cr and Mo layers are found to be a hcp structure with the c-axis perpendicular to the film plane. The direction of the film plane is the easy magnetization one. There is a no significant difference in shape of hysteresis loops between Co/Cr and Co/Mo multilayer films. It is found that Mo layer is more effective than Cr for preparing Co layer with c-axis normal to the film plane.

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