• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.259-264
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• 2000

Systematic research of metal alkoxide electrophoretic deposition has been developed. The formation mechanism of electrophoretic deposits has been offered. The structure study of dry and heat-treated electrophoretic deposits has been established. The concrete examples of one and bi-component oxide thin film formation were considered. The new approaches for thin film technology have developed on various substrates of different shapes and sizes. The correlation between thin film structure, mechanism of their formation, and physico-chemical properties has been determined.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.784-787
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• 2002

We prepared the PLT(28) thin film by using sol-gel method and investigated the structure and electrical properties of the film. With the XRD and AFM analyses, it is found that PLT(28) thin film annealed at 6sot has a complete perovskite structure and its surface roughness is about 22$\AA$. We prepared PLT(28) thin film on the Pt/TiO$_{x}$SiO$_2$/Si substrate, in which the specimen has a planar capacitor structure, and analyzed the electrical properties of PLT(28) thin film. In result, PLT(28) thin film has a paraelectric phase and its dielectric constant and loss tangent at 10kHz are 761 and 0.024, respectively. Also, the storage charge density and leakage current density of PLT(28) thin film at W are 134fC/$\mu$m2 and 1.01 $\mu$A/cm2, respectively. As a result of this, we concluded that the PLT(28) thin film is a promising material to be used as a capacitor dielectrics for next generation DRAM.M.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.10
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• pp.461-466
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• 2006

In the present work, we investigated the photodissolution and photodiffusion effect on the interface of Ag/chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film by measuring the absorption coefficient, the optical density, the resistance change of Ag layer. It was found that the photodissolutioniphotodiffution ratio depends on the magnitude of photon energy absorbed in the chalcogenide thin film and the depth of photodiffution was proportional to the square root of the exposed time. Also, we have investigated the holographic grating formation with P-polarization states on chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film and $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film. Holographic gratings have been formed using He-Ne laser (632.8 nm) which have a smaller energy than the optical energy gap, $E_g\;_{opt}$ of the film, i. e., an exposure of sub-bandgap light $(h{\upsilon} under P-polarization. As the results, we found that the diffraction efficiency on $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film was more higher than that on single $As_{40}Ge_{10}Se_{15}S_{35}$ thin film. Also, we obtained that the maximum diffraction efficiency was 0.27 %, 1,000 sec on $As_{40}Ge_{10}Se_{15}S_{35}\;(1{\mu}m)/Ag$ (10 nm) double layer structure thin film by (P: P) polarized recording beam. It will offer lots of information for the photodoping mechanism and the analyses of chalcogenide thin films.

• Journal of Adhesion and Interface
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• v.3 no.4
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• pp.37-43
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• 2002

A number of thin-film deposition technologies have been developed. However, even a thin film whose properties are excellent may not be used as long as the adhesion strength between the thin film and the substrate is poor. For thin films, the adhesion strength is as important as the properties. In the present article, relation between interface structure and thin film adhesion, and factors affecting thin film adhesion are reviewed. Two kinds of factors, internal factors and external factors, affect thin film adhesion. Such factors as composition, structure, and reactivity of both thin film and substrate as well as surface roughness of the substrate and residual stress of the thin film belong to internal factors. And such factors as load, temperature, humidity, and corrosive environment belong to external factors. It is also reviewed that how we can control the internal factors and the external factors to enhance or keep the adhesion strength.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.6
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• pp.4121-4124
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• 2015

Near infrared blocking function in energy saving window glass is required. The design, deposition and characteristics of optical thin films for reflection of near-infrared light were studied. The optical thin film is designed as laminated film structure with low refractive index film and high index film. Deposition experiments of $SiO_2$ and $TiO_2$ thin films with designed structure using the RF sputtering method were carried out. The characteristics of the thin film with deposition conditions were analyzed. High-refractive-index thin film of $TiO_2$/low refractive-index thin film of $SiO_2$ and high-refractive-index thin film of $TiO_2$ structure for reflection of near-infrared light was designed to be simulated. Results of simulation showed reflectance of 30% or more in the range from 930nm to 1682nm. Triple layer thin films fabricated with simulated results showed wavelength bands from 930nm to 1525nm for the reflectance of 33% or more.

• Cartoon and Animation Studies
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• s.29
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• pp.61-75
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• 2012

The essay explores the narrative structure of the classical Chinese feature animation, (a.k.a. Da Nao Tian Gong, 1964). The film is presented with a modular structure which is quite unique compared with the storytelling in feature animated films from other cultures, but could be connected with the tradition narrative structure in Chinese Zhanghui style novels in Ming and Qing Dynasty. By relating the original text of the story, the 16th century novel Journey to the West (a.k.a. Xi You Ji), with the film , the essay addresses the question of how the narrative tradition in Chinese classical literature influenced the Uproar in Heave for its segment narrative structure, character driven storytelling strategy and mirrored repetitive 2 plot lines. The subject of this essay is even more significant after the restored 3D version of was re-released in the spring of 2012 and became one of the best-selling animated feature film in the history of the country.

• Applied Science and Convergence Technology
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• v.24 no.3
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• pp.60-66
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• 2015

The modified amorphous GeTe formed by pulsed laser irradiation in as-grown GeTe has been analyzed in terms of variations of local bonding structure using extended x-ray absorption fine structure (EXAFS). The modified GeTe film has octahedral-like Ge-Te bonding structure that can be effectively induced by irradiation process. The EXAFS data clearly shows that the irradiation can lead to reduction of the average coordination number. Variations in the transition temperature for the irradiated film during crystallization can be described by the presence of octahedral-like local structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.2
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• pp.112-115
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• 2011

To stabilize the electric characteristic of Silicon Thin Film Transistor, reducing the current leakage is most important issue. To reduce the current leakage, many ideas were suggested. But the increase of mask layer also increased the cost. On this research Bird's Beak process was use to present element. Using Silvaco simulator, it was proven that it was able to reduce current leakage without mask layer. As a result, it was possible to suggest the structure that can reduce the current leakage to 1.39nA without having mask layer increase. Also, I was able to lead the result that electric characteristic (on/off current ratio) was improved compare from conventional structure.

• Journal of Magnetics
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• v.4 no.2
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• pp.69-72
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• 1999

Magnetic properties and crystallographic structure of e-beam evaporated Co/Cr and Co/Mo multilayer thin films were investigated using VSM and XRD. Co/Cr and Co/Mo multilayer thin films are confirmed as an alternating layered structure. The structure of films with thicker Co layers than Cr and Mo layers are found to be a hcp structure with the c-axis perpendicular to the film plane. The direction of the film plane is the easy magnetization one. There is a no significant difference in shape of hysteresis loops between Co/Cr and Co/Mo multilayer films. It is found that Mo layer is more effective than Cr for preparing Co layer with c-axis normal to the film plane.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.05a
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• pp.577-578
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• 2012