• 한국재료학회지
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• 제14권4호
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• pp.246-250
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• 2004

We have investigated the effects of boron added to Cu film on the Cu-Ti reaction and microstructural evolution of Cu(B) alloy film during annealing of Cu(B)/Ti/$SiO_2$/Si structure. The result were compared with those of Cu(B)/$SiO_2$ structure to identify the effects of Ti glue layers on the Boron behavior and the result grain growth of Cu(B) alloy. The vacuum annealing of Cu(B)/Ti/$SiO_2$ multilayer structure allowed the diffusion of B to the Ti surface and forming $TiB_2$ compounds at the interface. The formed $TiB_2$ can act as a excellent diffusion barrier against Cu-Ti interdiffusion up to $800^{\circ}C$. Also, the resistivity was decreased to $2.3\mu$$\Omega$-cm after annealing at $800^{\circ}C$. In addition, the presence of Ti underlayer promoted the growth Cu(l11)-oriented grains and allowed for normal growth of Cu(B) film. This is in contrast with abnormal growth of randomly oriented Cu grains occurring in Cu(B)/$SiO_2$ upon annealing. The Cu(B)/Ti/$SiO_2$ structure can be implemented as an advanced metallization because it exhibits the low resistivity, high thermal stability and excellent diffusion barrier property.

• 한국재료학회지
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• 제24권7호
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• pp.344-350
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• 2014

Metal films (i.e., Ti, Al and SUH310S) were prepared in a magnetron sputtering apparatus, and their cross-sectional structures were investigated using scanning electron microscopy. The apparatus used consisted of a cylindrical metal target which was electrically grounded, and two anode rings attached to the top and to the bottom of the target. A wire was placed along the center-line of the cylindrical target to provide a substrate. When the electrical potential of the substrate was varied, the metal-film formation rate depended on both the discharge voltage and the electrical potential of the substrate. As we made the magnetic field stronger, the plasma which appeared near the target collected on the plasma wall surface and thereby decreased the bias current. The bias current on the conducting wire was different from that for cation collection. The bias current decreased because the collection of cations decreased when we increased the magnetic-coil current. When the substrate was electrically isolated, the films deposited showed a slightly coarse columnar structure with thin voids between adjacent columns. In contrast, in the case of the grounded substrate, the deposited film did not show any clear columns but instead, showed a densely-packed granular structure. No peeling region was observed between the film and substrate, indicating good adhesion.

• 한국자기학회지
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• 제22권1호
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• pp.6-10
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• 2012

본 연구에서는 인산 용액 하에서 2차 양극 산화 기법에 의해 제작된 양극 산화 알루미나 기판 상에 최대 13 nm 두께의 얇은 니켈 박막을 증착하며 증착 시 박막 두께에 따라 감소하는 박막의 저항 변화를 살펴보았다. 양극 산화 알루미나 막 표면에 존재하는 미세 기공 구조를 따라 증착된 니켈 박막 역시 다공 구조의 박막으로 성장하게 되며 증착된 박막의 두께 범위 내에서 박막의 저항은 $150k{\Omega}$ 이상의 값을 보이면서 박막 두께에 따른 저항의 감소가 매우 천천히 일어나는 것을 확인할 수 있었다. 측정된 저항 값은 기존에 보고된 균일한 기판 상에 증착된 동일 두께의 니켈 박막에 비해 매우 큼을 볼 수 있었으며 기판 표면에 존재하는 기공 구조에 의해 핵자가 형성될 수 있는 표면 면적 비가 박막 성장을 설명하는 스미기(percolation) 현상이론에서 예측하는 임계 값보다 매우 적어 미세 기공에 의해 박막의 성장과 함께 나타나는 전자 전도 채널의 형성이 저해됨으로 이해될 수 있다. 이와 함께 기존의 박막 두께에 따른 비저항 모델과 비교해 보았을 때 미세 기공의 경계에서 나타나는 전자 산란 현상 역시 박막저항의 증가에 기여함을 알 수 있다.

• 한국콘텐츠학회논문지
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• 제13권4호
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• pp.125-136
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• 2013

이 논문은 1980년대 이후 한국에서 영화의 사회적 위상이 올라가는 과정을 사회학적으로 살펴보았다. 특히 영화의 위상 변화는 사회에서 문화적 가치를 인정받는 정당화 과정으로 인식하고, 이에 영향을 미치는 사회적 동력을 탐색하였다. 이를 위해 사회운동 이론에서 다루는 기회구조 개념을 논의의 배경으로 삼았다. 기회구조는 동원집단(=영화계) 외부에 존재하는 변수를 의미하며, 본론에서 기회와 위협요인으로 제시된다. 영화의 정당화 과정에 기회로 작용한 요소는 80년대 민중문화운동을 통한 영화 신진 인력의 투입이다. 반면, 위협요소는 미국 영화계의 산업적인 침투와 이에 대한 영화시장의 개방이다. 각각의 요소는 영화계 외부의 변수로 작용하였고, 영화의 정당화 과정에 있어 보완재와 경쟁재로 작용하였다. 1980년대 이후 민중문화 운동은 영화를 의미 있는 문화적 산물로 정당화 하는데 영향을 주었다. 또한, 미국 영화계의 위협은 한국 영화계 내부의 합리성과 경쟁구도를 역동적으로 변화시켰다.

• 한국자기학회지
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• 제21권5호
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• pp.185-192
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• 2011

박막제조 기술은 과학 기술의 기초가 되는 분야로 양질의 박막을 제조하기 위한 다양한 노력이 경주되고 있다. 박막제조는 표면개질과 함께 표면처리 기술의 한 분야이며 이중 진공증착으로 알려진 물리증착법과 화학증착법은 현대의 과학기술 연구는 물론 산업적으로 폭넓게 이용되는 박막제조 기술 중의 하나이다. 진공증착을 이용한 박막제조 기술은 나노 기술의 등장과 함께 비약적인 발전을 이루었으며 자연모사와 완전화 박막의 제조, 융복합 공정을 이용한 기능성 코팅과 Engineered Structure 구현 그리고 초고속 증착과 원가 저감 기술의 실현이 주요 이슈로 등장하고 있다. 본 논문에서는 물리증착법과 화학증착법을 중심으로 박막제조 기술의 종류와 원리를 설명하고 박막제조 기술의 최신 동향과 기술적 이슈 및 향후 전망에 대해 기술한다.

• International Journal of Industrial Entomology and Biomaterials
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• 제37권2호
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• pp.36-42
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• 2018

Recently, silk sericin has attracted attention because of its unique properties as a biomaterial, including its UV resistance, moisturizing effect on skin, and wound-healing effect. Therefore, the preparation of sericin in various forms such as gel, film, fiber, and sponge is studied for cosmetic and biomedical applications, and the effect of the preparation conditions on the structure and properties of sericin forms is examined to maximize its performance. In this study, silk sericin films were prepared under different preparation conditions and heat-treated at high temperatures ($100-250^{\circ}C$) to examine the effect of heat treatment on the film structure. The order of the crystallinity index of the untreated sericin film is as follows: F25 (sericin film cast from formic acid) > WE25 (ethanol treated sericin film cast from water at $250^{\circ}C$) > W25 (sericin film cast from water at $250^{\circ}C$) > W100 (sericin film cast from water at $100^{\circ}C$). As the heat-treatment temperature was increased, the color of the sericin films changed gradually from colorless to yellow, brown, and black depending on the temperature. The crystallinity of the sericin film changed after the heat treatment, depending on the preparation condition. Whereas a sericin film cast from formic acid (F25) started to lose its crystallinity at $200^{\circ}C$, thus undergoing the highest loss of crystallinity among the sericin films studied, the rest (W25, WE25, and W100) showed a decrease in crystallinity at $250^{\circ}C$, owing to the disruption of the ${\beta}$-sheet crystallites due to heat.

• Transactions on Electrical and Electronic Materials
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• 제18권6호
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• pp.323-329
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• 2017

This reports the electrical behavior, bonding structure and Schottky contact of gallium-zinc-oxide (GZO) thin film annealed at $100{\sim}400^{\circ}C$. The mobility of GZO with high density of PL spectra and crystal structure was also increased because of the structural matching between GZO and Si substrate of a crystal structure. However, the GZO annealed at $200^{\circ}C$ with an amorphous structure had the highest mobility as a result of a band to band tunneling effect. The mobility of GZO treated at low annealing temperatures under $200^{\circ}C$ increased at the GZO with an amorphous structure, but that at high temperatures over $200^{\circ}C$ also increased when it was the GZO of a crystal structure. The mobility of GZO with a Schottky barrier (SB) was mostly increased because of the effect of surface currents as well as the additional internal potential difference.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.109-110
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• 2005

We have suggested sputtered W-C-N thin film for preventing thermal budget between semiconductor and metal. These results show that the W-C-N thin film has good thermal stability and low resistivity. In this study we newly suggested sputtered W-B-C-N thin diffusion barrier. In order to improve the characteristics, we examined the impurity behaviors as a function of nitrogen gas flow ratio. This thin film is able to prevent the interdiffusion during high temperature (700 to $1000^{\circ}C$) annealing process and has low resistivity ($\sim$200$\mu{\Omega}-cm$). Through the analysis of X-Ray diffraction, resistivity and XPS, we studied structure behavior of W-B-C-N diffusion barrier.

• 한국진공학회지
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• 제4권S2호
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• pp.30-33
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• 1995

By using X-ray double crystal diffraction technique the multilayer structure composed of glass membrane, platinum film and $\alpha Al_2O_3$ substrate has been studied. It is found the stress is produced in the film by thermal mismatch within multilayer materials. The measuring results of thin film platinum resistors show that the stress were induce resistance change of device and different stress status will produce add resistance in different direction. Selecting proper glass material can make opposite stress in Pt film and opposite add resistance due to thermal mismatch. The reliability of Pt resistor has been improved with method of this stress compensation.

• 센서학회지
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• 제27권1호
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• pp.36-39
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• 2018

Transparent olivine $LiNiPO_4$ thin films on sapphire substrates were fabricated by radio frequency (RF) magnetron sputtering. The X-ray diffraction patterns show these thin films have the phase of $LiNiPO_4$ with an ordered olivine structure indexed to the orthorhombic Pmna space group. $LiNiPO_4$ thin films deposited on sapphire substrates exhibit transmittance of about 83 %. It was confirmed that the $LiNiPO_4$ thin film exhibits a high potential of 5 V-class.