• 한국결정성장학회지
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• 제12권6호
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• pp.283-287
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• 2002

초고집적 반도체 회로에서 Cu를 배선으로 쓰이기 위한 Cu 금속과 Si 기판사이의 확산방지막으로써 Zr(Si)N 박막을 연구하였다. Zr(Si)N 박막증착은 DC magnetron sputter으로 $Ar/N_2$의 혼합 gas를 사용한 reactive sputtering 방법을 이용하였다. 상온에서 ZrN 박막 증착시 Ar gas와 NE gas 비율이 48 : 2일 때 가장 낮은 비저항값을 가졌으며, 증착시 기판의 온도의 증가에 따라서 비저항값이 낮아졌다. 비저항값이 감소된 ZrN 박막일수록 (002)면의 방향성을 갖는 결정이 성장되었다. ZrN 박막의 Cu 확산방지 특성은 ZrN 박막에 Si을 첨가함으로써 개선될 수 있으며 지나치게 첨가될 경우에는 오히려 확산방지 특성이 감소되었다. 접착력 특성에서는 ZrN에 Si의 함유량이 증가함에 파라 개선되었다. 증착막의 특성은 XRD, 광학 현미경, scretch tester 그리고 $\alpha$-step 등을 사용하여 분석하였다.

• 한국수소및신에너지학회논문집
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• 제24권2호
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• pp.179-185
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• 2013

The behavior of surface film formation was greatly dependent on the speed of potential cycling. In $LiClO_4$ / EC + DEC, cyclic voltammetry results showed that the peaks originated from surface film formation on graphite electrode at the high charge-discharge rate was shifted to the lower potentials as the charge-discharge rate decrease. This indicates that surface films with different morphology and thickness were formed by different charge-discharge rate. Transmission electron microscopy (TEM) results indicated that the properties such as thickness and morphology of the surface film were greatly affected by the charge-discharge rate. Electrochemical impedance spectroscopy (EIS) showed that the resistance of surface film was affected by the speed of potential cycling. In addition, the charge transfer resistance was also dependent on the charge-discharge rate indicating that the charge transfer reaction was affected by the nature of surface film. TEM and EIS results suggested that the chemical property as well as the physical property of the surface film was affected by the charge-discharge rate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.369-369
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• 2007

ZnO film has been investigated during several decades because it has excellent optical property like a transmittance among the range of visible light for using transparent conducting oxide (TCO) films. But ZnO film has not enough conductivity for applying to TCO devices. Therefore we synthesized platinum nanoparticles and they incorporated into ZnO due to improve the electrical property of ZnO film by sol-gel synthesis method. Also, we fabricated photosensitive ZnO thin film containing Pt nanoparticles by sol-gel process and spin-coating for using photochemical solution deposition. Photosensitive ZnO film could carry out the direct-pattern which allow the etching process to be convenient. The optical and electrical properties of ZnO film with or without various atomic percent of Pt nanoparticles annealed at various temperatures were investigated by using UV-Vis spectroscopy and 4-point probe method, respectively. We characterized the ZnO thin film containing Pt nanoparticles using X-ray diffraction, scanning electron microscopy, and X-ray photoelectron spectroscopy.

• 한국재료학회지
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• 제29권9호
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• pp.547-552
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• 2019

In the present study, the thermal conductivity of a silicon nitride($Si_3N_4$) thin-film is evaluated using the dual-wavelength pump-probe technique. A 100-nm thick $Si_3N_4$ film is deposited on a silicon (100) wafer using the radio frequency plasma enhanced chemical vapor deposition technique and film structural characteristics are observed using the X-ray reflectivity technique. The film's thermal conductivity is measured using a pump-probe setup powered by a femtosecond laser system of which pump-beam wavelength is frequency-doubled using a beta barium borate crystal. A multilayer transient heat conduction equation is numerically solved to quantify the film property. A finite difference method based on the Crank-Nicolson scheme is employed for the computation so that the experimental data can be curve-fitted. Results show that the thermal conductivity value of the film is lower than that of its bulk status by an order of magnitude. This investigation offers an effective way to evaluate thermophysical properties of nanoscale ceramic and dielectric materials with high temporal and spatial resolutions.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2001년도 춘계학술발표회 초록집
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• pp.73-73
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• 2001

Boron-containing materials have several excellent properties, such as superlnardness, insulation and non-Rinear optical property. Recently, oxynitride compounds, such as Si(ON), Ti(ON), became the promising materials applied in diffusion barrier layer and solar cell. With the expectation of obtaining the hybrid property, we have firstly grown the BON thin film by radio frequency (R.F.) plasma enhanced metalorganic chemical vapm deposition (PEMOCVD) with 100 kHz frequency and trimethyl borate precursor. The plasma source gases used in this study were Ar and $H_2$, and two kinds of nhmgen source gases, $N_2$ and <$NH_3$, were also employed. The as-grown films were characterized by XPS, IR, SEM and Knoop microlhardness tester. The relationship between the films hardness and the growth rate indicated that the hardness of the film was dependent on several factors such as nitrogen source gas, substrate temperature and film thickness due to the variation of the composition and the structure of the film. Both nitrogen and carbon content could raise the film hardness, on which nitrogen content did stronger effect than carbon. The smooth morphology and continuous structure was benefit of obtaining high hardness. The maximum hardness of BON film was about 10 GPa.

• 한국전기전자재료학회논문지
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• 제27권11호
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• pp.736-739
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• 2014

In this paper, we propose a enhanced anti-corrosion property of the ground system by coating the CNT/PVDF composite film on it. Polymer material used for preventing the corrosion of ground system is polyvinylidene fluoride (PVDF), and conducting filler for obtaining conductivity of the composite film is multi-walled carbon nanotubes (MWCNTs). The MWCNTs were dispersed in the organic solvent of methyl ethyl ketone 2-butanone (MEK) with different concentration ratios, and the PVDF was solved in the MEK solvent with constant concentration ratio of 1 wt%. The CNT/PVDF composite solution was perpared by mixing and re-dispersing the CNT solution and the PVDF solution. Finally, the CNT/PVDF composite films were fabricated by the spray coating method using the above composite solution. Electrical conductivity, surface states, and anti-corrosion property of the CNT/PVDF composite films coated on the Cu substrate were evaluated. We found that the CNT/PVDF composite film showed relatively low resistance, hydrophobic surface state, and chemical stability. Consequently, we could improve the anti-corrosion property and maintain the electrical conductivity of the ground system by coating the CNT/PVDF composite film on it.

• 한국태양에너지학회 논문집
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• 제39권1호
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• pp.33-40
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• 2019

Al-doped ZnO (AZO) thin films were synthesized on Si(100) wafers via plasma enhanced metal organic chemical vapor deposition (PE-MOCVD) method using diethyl zinc (DEZ) and N-methylpyrrolidine alane (MPA) as precursors. Effects of Al/Zn mixing ratio, plasma power on the surface morphology, crystal structure, and electrical property were investigated with SEM, XRD and 4-point probe measurement respectively. Growth rate of the film decreased slightly with increasing the Al/Zn mixing ratio, however electrical property was enhanced and resistivity of the film decreased greatly about 2 orders from $9.5{\times}10^{-1}$ to $8.0{\times}10^{-3}{\Omega}cm$ when the Al/Zn mixing ratio varied from 0 to 9 mol%. XRD analysis showed that the grain size increased with increasing the Al/Zn mixing ratio. Growth rate and electrical property were enhanced in a mild plasma condition. Resistivity of AZO film decreased down to $7.0{\times}10^{-4}{\Omega}cm$ at an indirect plasma of 100 W condition which was enough value to use for the transparent conducting oxide (TCO) material.

• Korean Chemical Engineering Research
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• 제48권2호
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• pp.218-223
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• 2010

본 연구에서는 반도체식 가스센서 재료로서 활용 가능한 ZnO 박막을 Continuous Flow Reaction(CFR) 방법으로 실리콘 기판 위에 성장시켰다. 또한 전구물질로 사용한 zinc acetate의 농도에 따른 산화아연 박막의 성장특성과 이들의 전기적 특성이 조사되었다. 산화아연 박막 제조는 0.005~0.02 M의 zinc acetate 농도에서 수행되었다. 산화아연 박막을 구성하고 있는 ZnO의 입자크기는 농도가 증가할수록 증가되었으며, 박막의 두께도 함께 증가되었다. CFR 법에 의한 산화아연 박막의 성장속도는 전구물질의 농도에 비례적으로 의존되는 것을 확인하였으며, 균일한 박막을 제조하기 위한 전구물질의 최적 농도는 0.01 M이였다. 한편, 전구물질의 농도를 달리하여 제조된 산화아연 박막의 전압에 대한 전류를 I-V 측정기로 측정한 결과, 박막의 두께가 증가될수록 높은 전류가 흘렀다. 그러므로 산화아연 박막의 전류를 전구물질의 농도변화로 조절할 수 있다. 또한 산화아연 박막을 $300^{\circ}C$에서 5 min 동안 $500ppmv\;H_2S$에 노출시킨 결과, 전압에 대한 전류값이 낮아졌다. 이와 같이 산화아연의 전기적 특성은 가스센서로 응용할 수 있는 가능성을 확인시켜 주는 결과라 할 수 있다.

• 멤브레인
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• 제20권1호
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• pp.8-12
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• 2010

전도성 고분자 중 안정성이 높은 Poly(3,4-ethylenedioxythiophene) (PEDOT)을 이용하여 전기변색 박막을 제조하고 박막제조 방법에 따른 전기변색 특성을 연구하였다. PEDOT 박막은 전기중합법과 증기중합법에 의해 제조되었고, 두가지 방법 모두 도핑되지 않은 중성 상태에서 짙은 푸른색을 띠는 박막으로 제조되었다. 전기변색 특성을 평가하기 위하여 UV-Vis spectrophotometer와 Cyclic voltammetry가 사용되었으며, 산화/환원 시 표면은 AFM으로 관찰되었다. 전기 중합법으로 제조된 PEDOT 박막에 비해 증기중합에 방법에 의해 제작된 PEDOT 박막의 표면이 거칠기 50 nm 이내로 균일 하였다. 특히 증기 중합법을 이용하여 제조된 전기 변색 소재의 특성도 응답성 1.5초 이내, 49%의 투과율 차이, 402의 변색 효율을 보여 박막의 특성 향상으로 전기변색특성이 향상 된 결과를 보였다.

• 공업화학
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• 제25권6호
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• pp.598-601
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• 2014

Polypropylene의 농도와 코팅 막의 건조 온도 및 나노실리카의 첨가량의 변화 등 polypropylene 박막 제조를 위한 공정 변수들이 박막의 표면 형상 및 특성에 미치는 영향을 연구하였다. Polypropylene의 농도가 30 mg/mL인 경우에 $30^{\circ}C$의 건조 온도로 90 min 동안 93 mTorr의 진공 조건으로 최대 접촉각 $154^{\circ}$를 갖는 초소수성 polypropylene 박막을 얻을 수 있었다. 용매 휘발을 위한 진공 오븐에서의 건조 온도가 증가함에 따라 박막의 거칠기가 감소하여 접촉각이 낮아지는 효과를 가져왔다. Polypropylene-실리카 복합막은 박막 내에 나노실리카의 함유량의 증가에 따라 박막 표면이 미세 다공성 구조에서 미세 구형 구조물로 변환되면서 접촉각의 증가로 초소수성 표면 특성을 보였다.