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http://dx.doi.org/10.7836/kses.2019.39.1.033

Effect of Plasma Enhancement on the Al-doped ZnO Thin Film Synthesis by MOCVD  

Seomoon, Kyu (Department of Applied Chemistry, Cheongju University)
Publication Information
Journal of the Korean Solar Energy Society / v.39, no.1, 2019 , pp. 33-40 More about this Journal
Abstract
Al-doped ZnO (AZO) thin films were synthesized on Si(100) wafers via plasma enhanced metal organic chemical vapor deposition (PE-MOCVD) method using diethyl zinc (DEZ) and N-methylpyrrolidine alane (MPA) as precursors. Effects of Al/Zn mixing ratio, plasma power on the surface morphology, crystal structure, and electrical property were investigated with SEM, XRD and 4-point probe measurement respectively. Growth rate of the film decreased slightly with increasing the Al/Zn mixing ratio, however electrical property was enhanced and resistivity of the film decreased greatly about 2 orders from $9.5{\times}10^{-1}$ to $8.0{\times}10^{-3}{\Omega}cm$ when the Al/Zn mixing ratio varied from 0 to 9 mol%. XRD analysis showed that the grain size increased with increasing the Al/Zn mixing ratio. Growth rate and electrical property were enhanced in a mild plasma condition. Resistivity of AZO film decreased down to $7.0{\times}10^{-4}{\Omega}cm$ at an indirect plasma of 100 W condition which was enough value to use for the transparent conducting oxide (TCO) material.
Keywords
AZO; PE-MOCVD; TCO; indirect plasma;
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