Proceedings of the Korean Institute of Surface Engineering Conference (한국표면공학회:학술대회논문집)
- 2001.06a
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- Pages.73-73
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- 2001
Influence of Deposition Parameters on Film Hardness for Newly Synthesized BON Thin Film by Low Frequency R.F. PEMOCVD
- G.C. Chen (Center for Advanced Plasma Surface Technology, Sungkyunkwan University) ;
- J.-H. Boo (Center for Advanced Plasma Surface Technology, Sungkyunkwan University) ;
- Kim, Y.J. (Center for Advanced Plasma Surface Technology, Sungkyunkwan University) ;
- J.G. Han (Center for Advanced Plasma Surface Technology, Sungkyunkwan University)
- Published : 2001.06.01
Abstract
Boron-containing materials have several excellent properties, such as superlnardness, insulation and non-Rinear optical property. Recently, oxynitride compounds, such as Si(ON), Ti(ON), became the promising materials applied in diffusion barrier layer and solar cell. With the expectation of obtaining the hybrid property, we have firstly grown the BON thin film by radio frequency (R.F.) plasma enhanced metalorganic chemical vapm deposition (PEMOCVD) with 100 kHz frequency and trimethyl borate precursor. The plasma source gases used in this study were Ar and
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