• Journal of the Korean institute of surface engineering
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• v.46 no.4
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• pp.153-157
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• 2013

The defect like the void or seam is frequently generated in the PCB (Printed Circuit Board) Via-Filling plating inside via hole. The organic additives including the accelerating agent, inhibitor, leveler, and etc. are needed for the copper Via-Filling plating without this defect for the plating bath. However, the decomposition of the organic additive reduces the lifetime of the plating bath during the plating process, or it becomes the factor reducing the reliability of the Via-Filling. In this paper, the interaction of each organic additives and the decomposition of additive were discussed. As to the accelerating agent, the bis (3-sulfopropyl) disulfide (SPS) and leveler the Janus Green B (JGB) and inhibitor used the polyethlylene glycol 8000 (PEG). The research on the interaction of the organic additives and decomposition implemented in the galvanostat method. The additive decomposition time was confirmed in the plating process from 0 Ah/l (AmpereHour/ liter) to 100 Ah/l with the potential change.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.4
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• pp.45-50
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• 2006

Copper via filling is the important factor in 3-D stacking interconnection of SiP (system in package). As the packaging density is getting higher, the size of via is getting smaller. When DC electroplating is applied, a defect-free hole cannot be obtained in a small size via hole. To prevent the defects in holes, pulse and pulse reverse current was applied in copper via filling. The holes, $20\and\;50{\mu}m$ in diameter and $100{\sim}190\;{\mu}m$ in height. The holes were prepared by DRIE method. Ta was sputtered for copper diffusion barrier followed by copper seed layer IMP sputtering. Via specimen were filled by DC, pulse and pulse-reverse current electroplating methods. The effects of additives and current types on copper deposits were investigated. Vertical and horizontal cross section of via were observed by SEM to find the defects in via. When pulse-reverse electroplating method was used, defect free via were successfully obtained.

• Journal of the korean academy of Pediatric Dentistry
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• v.36 no.1
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• pp.20-29
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• 2009

This study was performed to evaluate the effect of the shrinkage stress induced by polymerization process of several light curing filling materials according to filling methods. High power light curing unit which has a plasma arc lamp was used and filling materials used were Filtek $Z-250^{(R)}$ composite resin, $Dyract^{(R)}$ AP compomer and $Tetric^{(R)}$ Flow flowable composite resin. Cavities were prepared on the permanent molars with width 3 mm, height 3 mm and depth 1.5 mm and the filling materials were filled with 1 step, 2 step layering technique and 3 step oblique filling methods. The results can be summarized as follows; 1. Strain values showed rapid increase from the start of light curing followed by gradual decrease afterwards with time. 2. Although the shrinkage stress value of $Z-250^{(R)}$ were shown to be relatively higher than $Dyract^{(R)}$ AP and $Tetric^{(R)}$ Flow, no statistically significant could be found between tested materials(p>0.05). 3. There were no statistically significant difference between 3 filling methods when using $Dyract^{(R)}$ AP and $Z-250^{(R)}$(p>0.05). 4. There were no statistically significant difference between shrinkage stress values obtained from samples prepared by different filling methods and materials(p>0.05).

• Restorative Dentistry and Endodontics
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• v.24 no.1
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• pp.76-87
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• 1999

The effect of retrograde root-end filling materials(IRM, Super-EBA, Vitremer, MTA) on human periodontal ligament fibroblasts and osteoblasts was observed. The cell activities were evaluated by MTT assay, protein assay and alkaline phosphatase activity examination. The results as follows ; 1. After 24hrs culture, both E1 cells & PDL fibroblast adding root-end filling materials were suppressed cell activities but after 48hrs, cell activities were recovered. 2. Cell activity was lowest in Vitremer followed by IRM, MTA, Super-EBA. 3. Cell activity depression by Vitremer was not concerned with pH changes. 4. Protein synthesis by root-end filling materials were not significant difference in Both E1 cell & PDL fibroblasts but protein synthesis were a little increased by Super-EBA. 5. Alkaline phosphatase activity was increased in E1 cell by Super-EBA & MTA but was not significant differences in E1 cell by IRM & Vitremer. Alkaline phosphatase activity was a little depressed in PDL fibroblast by Vitremer. This findings suggest that these root-end filling materials may have important roles in promotion of PDL healing and consequently may be useful for clinical application in apical surgery.

• Journal of Korean Academy of Oral and Maxillofacial Radiology
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• v.24 no.1
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• pp.59-66
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• 1994

The radiopacity of six composite resins, three resin luting cements and ten filling materials were studied. The purpose was to obtain an indication of radiopacity value of different brands within each of these groups of materials and to show differences in radiopacities of filling materials and natural tooth structures. On radiographs, the optimal densities of standardized samples were determined by computer imaging system and radiopacity values of the materials were expressed in millimeter equivalent aluminum. Within the groups of materials studied, there was considerable variation in radiopacity. The composite resins of P-50, Z100 and Prisma AP.H displayed much higher radiopacities than aluminum. Panavia resin cement was shown to be similarly radiopaque to aluminum. Generally, the radiopacity of base and filling materials appeared to be higher than that of the enamel and dentin. If materials with substantial difference in radiopacity are used in combined applications for restorative treatment of teeth, lower radiopacity can interfere with the diagnosis and detection of gaps near the restoration.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.91-96
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• 2014

Through silicon via (TSV) technology is to form a via hole in a silicon chip, and to stack the chips vertically for three-dimensional (3D) electronics packaging technology. This can reduce current path, power consumption and response time. In this study, Cu-filling substrate size was changed from Si-chip to a 4" wafer to investigate the behavior of Cu filling in wafer level. The electrolyte for Cu filling consisted of $CuSO_4$ $5H_2O$, $H_2SO_4$ and small amount of additives. The anode was Pt, and cathode was changed from $0.5{\times}0.5cm^2$ to 4" wafer. As experimental results, in the case of $5{\times}5cm^2$ Si chip, suitable distance of electrodes was 4cm having 100% filling ratio. The distance of 0~0.5 cm from current supplying location showed 100% filling ratio, and distance of 4.5~5 cm showed 95%. It was confirmed good TSV filling was achieved by plating for 2.5 hrs.

• Journal of Welding and Joining
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• v.32 no.3
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• pp.19-26
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• 2014

Through Silicon Via (TSV) technology is the shortest interconnection technology which is compared with conventional wire bonding interconnection technology. Recently, this technology has been also noticed for the miniaturization of electronic devices, multi-functional and high performance. The short interconnection length of TSV achieve can implement a high density and power efficiency. Among the TSV technology, TSV filling process is important technology because the cost of TSV technology is depended on the filling process time and reliability. Various filling methods have been developed like as Cu electroplating method, molten solder insert method and Ti/W deposition method. In this paper, various TSV filling methods were introduced and each filling materials were discussed.

• Korean Journal of Materials Research
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• v.26 no.8
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• pp.427-429
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• 2016

A multi-step deposition process for the gap-filling of submicrometer trenches using dimethyldimethoxysilane (DMDMOS), $(CH_3)_2Si(OCH_3)_2$, and $C_xH_yO_z$ by plasma enhanced chemical vapor deposition (PECVD) is presented. The multi-step process consisted of pre-treatment, deposition, and post-treatment in each deposition step. We obtained low-k films with superior gap-filling properties on the trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on inter metal dielectric (IMD) and shallow trench isolation (STI) processes for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universally for other chemical vapor deposition systems.

• Journal of Korea Foundry Society
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• v.36 no.5
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• pp.153-158
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• 2016

The lost foam casting process was used to fabricate Al-Si-Mg cast specimens, and the effects of the chemical composition and process variables on the tensile properties and the mold filling ability were investigated. Some porosity formation was observed in thick sections of the casting and better tensile properties were obtained for thin sections, presumably because of their lower porosity and the higher cooling rate. Tensile properties were not clearly enhanced by grain refining treatment with Ti; however, the elongation was significantly improved by Sr modification of the Al-Si-Mg alloy. The mold filling distance was generally proportional to the pouring temperature of the melt, and the distance was also increased by the addition of Ti.

• Journal of Conservation Science
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• v.37 no.1
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• pp.55-62
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• 2021

This study investigated mechanical property changes by measuring compression factors, resilience, and compressive strength according to packaging pattern and filling rate to identify the applicability of cultural heritage packaging using thermoplastic polyurethane elastomers (TPU). Research results indicate that the cross-shaped 3D pattern showed the best resilience when the internal filling rate was 20%, while the octet pattern was the best when the filling rate was either 40 and 60%. The octet pattern had the best mechanical properties and stability with resistance capacities of 20.79 kgf/cm², 40.40 kgf/cm², and 82.23 kgf/cm² at 38%, 39%, and 40% recovery speeds, respectively, depending on the internal filling rate (20, 40, 60%). Based on these results, basic data on the applicability, stability, and reliability of 3D cultural heritage packaging materials using TPU materials were obtained.