• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 춘계학술대회 논문집
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• pp.27-27
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• 2010

The exact partial discharge pulse should be measured in order to estimate the discharge source in the solid insulation and diagnose the degree of deterioration. Partial discharges generated in the insulation occur in the internal voids or at the edge of the insulation, have unique characteristics following the type and location. When external voltage is applied, Partial discharges occurred in the restrictively presented voids increase the quantity of electrical charge at the discharge onset voltage. The discharge characteristics have remained constant as space is filled by the impurity such as a compound of gases accompanied with discharge. In this study, How to design the insulation about the problems of the built-in diagnostics in the transformer is discussed by the interpretation of electric field.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.34-34
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• 1999

토카막(Tokamak)에서는 플라즈마(plasma)로 불순불(impurity)의 유입을 방지하기 위해 고진공을 유지해야 하며 이를 위해 가열탈리(backing), 방전세정(discharge codanning) 등 wall conditioning이 기본적으로 요구된다. KT-1 토카막은 실험실 이전에 따른 해체로 인해 진공용기(vacuum vessel) 가 대기압 하에 수개월 동안 노출되어 있었기 때문에 재조립 후 가열 탈 리가 필수적이나 진공용기의 외부에 saddle loop coil을 비롯해 Rogowski, diamagnetic coil, poloidal field coil 등 많은 magnetic pick up coil 들이 설치되어 있어 열선 등 일반적인 방법으로 가열 탈 리가 어려운 상황이다. 따라서 KT-1 토카막에서는 전자석 코일에 상전원을 부가하였을 때 진공용기에 발생하는 유도가열 (inductive heatin)을 이용해 가열 탈리를 시도하였다. 유도 가열 탈리(inductive backing)는 토로이달 자장 코일(toroidal field coil)과 가열 저장 모일(ohmic heating coil)을 각각 이용하여 코일의 온도가 6$0^{\circ}C$ 이하가 유지되는 코일 전류 범위내에서 수행하였으며 먼저 이 둥 경우에 있어서 진공용기의 온도분포를 비교하엿다. 그리고 가열 탈리 기간 및 그 전, 후의 진공압력과 잔류기체 분압을 측정, 분석하였다. 유도가열에 의한 방법으로 KT-1 토카막에서 얻은 탈리온도는 12$0^{\circ}C$정도로 비교적 낮았으나 탈리 시간을 연장하여 탈리효과를 어느 정도 보상할 수 있으며 일반적인 가열 탈리가 여려운 경우 유도 가열 탈 리가 채택될 수 있는 또 하나의 방법이라 볼 수 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.561-561
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• 2012

Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as fast electron mobility, high thermal conductivity and optical transparency, and also found many applications such as field-effect transistors (FET), energy storage and conversion, optoelectronic device, electromechanical resonators and chemical sensors. Several techniques have been developed to form the graphene. Especially chemical vapor deposition (CVD) is a promising process for the large area graphene. For the electrically isolated devices, the graphene should be transfer to insulated substrate from Cu or Ni. However, transferred graphene has serious drawback due to remaining polymeric residue during transfer process which induces the poor device characteristics by impurity scattering and it interrupts the surface functionalization for the sensor application. In this study, we demonstrate the characteristics of solution-gated FET depending on the removal of polymeric residues. The solution-gated FET is operated by the modulation of the channel conductance by applying a gate potential from a reference electrode via the electrolyte, and it can be used as a chemical sensor. The removal process was achieved by several solvents during the transfer of CVD graphene from a copper foil to a substrate and additional annealing process with H2/Ar environments was carried out. We compare the properties of graphene by Raman spectroscopy, atomic force microscopy(AFM), and X-ray Photoelectron Spectroscopy (XPS) measurements. Effects of residual polymeric materials on the device performance of graphene FET will be discussed in detail.

• Transactions on Electrical and Electronic Materials
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• 제9권6호
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• pp.231-236
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• 2008

B, P, and Cs ions were implanted with various parameters into silicon nitride layers prepared by LPCVD. In order to get the maximum impurity concentration at the silicon nitride surface, a high temperature oxide (HTO) buffer layers was deposited prior to the implantation. Alkali ion and pH sensing properties of the layers were investigated with an electrolyte-insulator-silicon (EIS) structure using high frequency capacitance-voltage (HF-CV) measurements. The ion sensing properties of implanted silicon nitrides were compared to those of as-deposited silicon nitride. Band Cs co-implanted silicon nitrides showed a pronounced difference in pH and alkali ion sensing properties compared to those of as-deposited silicon nitride. B or P implanted silicon nitrides in contrast showed similar ion sensitivities like those of as-deposited silicon nitride.

• 전기전자학회논문지
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• 제15권2호
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• pp.143-148
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• 2011

MOS (Metal-Oxide Semconductor) devices among the most sensistive of all semiconductors to radiation, in particular ionizing radiation, showing much change even after a relatively low dose. The necessity of a radiation dosimeter robust enough for the working environment has increased in the fields of aerospace, radio-therapy, atomic power plant facilities, and other places where radiation exists. The power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) has been tested for use as a gamma radiation dosimeter by measuring the variation of threshold voltage based on the quantity of dose, and a maximum total dose of 30 krad exposed to a $^{60}Co$ ${\gamma}$-radiation source, which is sensitive to environment parameters such as temperature. The gate oxide structures give the main influence on the changes in the electrical characteristics affected by irradiation. The variation of threshold voltage on the operating temperature has caused errors, and needs calibration. These effects can be overcome by adjusting gate oxide thickness and implanting impurity at the surface of well region in MOSFET.

• Interaction and multiscale mechanics
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• 제1권4호
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• pp.437-448
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• 2008

This paper examined the stability of high-dense dislocation substructures (HDDSs) associated with martensite laths in High Cr steels supposed to be used for FBR, based on a series of dislocation dynamics (DD) simulations. The DD simulations considered interactions of dislocations with impurity atoms and precipitates which substantially stabilize the structure. For simulating the dissociation processes, a point defect model is developed and implemented into a discrete DD code. Wall structure composed of high dense dislocations with and without small precipitates were artificially constructed in a simulation cell, and the stability/instability conditions of the walls were systematically investigated in the light of experimentally observed coarsening behavior of the precipitates, i.e., stress dependency of the coarsening rate and the effect of external stress. The effect of stress-dependent coarsening of the precipitates together with application of external stress on the subsequent behavior of initially stabilized dislocation structures was examined.

• Journal of Korean Vacuum Science & Technology
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• 제6권1호
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• pp.43-45
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• 2002

We have theoretically investigated steady-state carrier transport and current self-oscillation in negative-effective-mass (NEM) p$\^$+/pp$\^$+/diodes. The current self-oscillation here is a result of the formation and traveling of electric field domains in the p base having a NEM. The dependence of self-oscillating frequency on the applied dc voltage is obtained by detailed numerical simulations. In the calculations, we have considered the scatterings by carrier-impurity, carrier-acoustic phonon, carrier-polar-phonon, and carrier-nonpolar-phonon-hole interactions . This kind of NEM oscillator allows us to reach a current oscillation with terahertz frequency, thus it may be used as a broadband source of terahertz radiation.

• E2M - 전기 전자와 첨단 소재
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• 제10권3호
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• pp.268-273
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• 1997

In this paper the transient electron transport in GaAs bulk is simulated by using ensemble Monte Carlo method. To analyze the transient electron transport the 10000 electrons in the .GAMMA. valley are simulated simultaneously for 10 picoseconds. The electric field-velocity relation is obtained. The high impurity density reduces the negative differential resistance effect. The result of transient average velocity shows the electron velocity in the transient state is faster than that in the steady state. This transient velocity overshoot is caused by the intervalley scattering mechanism. And we confirmed the fact that the energy relaxation time is longer than the momentum relaxation time.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.42-46
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• 2000

${\beta}{\cdot}In_2S_3$ 및 ${\beta}{\cdot}In_2S_3:Co^{2+}$ 은 $In_2S_3$+S+ZnS를 출발물질로 하여 ($ZnCl_2+I_2$)를 수송매체로 사용한 chemical transport reaction method로 성장시켰다. 성장된 단결정은 tetragonal structure를 갖고 298K에서 indirect optical energy gap은 2.240eV, 1.814eV로 각각 주어졌고, direct optical energy gap은 2.639eV, 2.175eV로 각각 주어졌다. ${\beta}{\cdot}In_2S_3:Co^{2+}$ single crystal에서 impurity optical absorption peak가 나타났으며, 이들 peaks의 origin은 $Co^{2+}(Td)$ ion의 energy level 간의 electron transition임을 crystal field theory를 적용하여 규명하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.24-27
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• 1994

Variations with structural and electrical properties of Yttrium added PZT thin films were observed and measured respectively. Area of rosette was increased by Yttrium added and shapes of hysteresis curves were changed to slim type. $Y^{3+}$ ion substituted $Pb^{2+}$ ion and played the role of doner. Because the creation of space charges was restricted by Yttrium, degradation of remanent polarizations by cumutation of polarization reversals of PZT was protected. But coercive field was increased because of vacancies generated Yttrium added.