• 제목/요약/키워드: field impurity

검색결과 101건 처리시간 0.027초

Numerical Analysis of Impurity Transport Along Magnetic Field Lines in Tokamak Scrape-011 Layer

  • Chung, Tae-Kyun;Hong, Sang-Hee
    • Nuclear Engineering and Technology
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    • 제30권1호
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    • pp.17-25
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    • 1998
  • Transport of carbon and boron impurity ions parallel to magnetic field lines in the tokamak SOL (scrape-off layer) is numerically investigated for a one-dimensional steady state. The spatial distributions of density and velocity of the impurity ions in a steady state are calculated by finite difference method for a single-fluid model. The calculated results show that among forces acting on SOL particles thermal force produced tv plasma temperature gradient is a principal force determining the feature of impurity distribution profiles in the tokamak edge. However, strong collisional friction forces appearing dominant in front of the diverter plate restrain impurity ion flows due to temperature gradients from moving toward the midplane. Consequently, the stagnation point develops in the impurity flow by these two forces near the diverter region, in which ion flows change their directions. Impurity ions turn out to be accumulated at the stagnation points, where peaked profiles of highly-ionized state ions are relatively predominant over those of low-ionized state ions.

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고체 절연체 내부 공극 또는 금속 이물질 존재시의 GIS 내부의 전계 해석 (Analysis of Electric Fields Inside GIS with a Small Void in Spacer or with a Metal Impurity)

  • 민석원;김용준;김응식
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제49권6호
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    • pp.346-353
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    • 2000
  • In this paper, we developed 3 dimensional Surface Charge Method which could calculate electric fields inside GIS with a small void in solid insulator or with a metal impurity. We find a metal impurity makes much more non-uniform electric field distribution inside GIS than a small void. We also find electric field is much more increased when a metal impurity is close to solid insulator surface at high voltage conductor.

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일반 3차원 표면전하법을 이용한 금속 이물질이 유입된 GIS 내부의 전계 해석 (Analysis of Electric Fields Inside GIS With Metal Impurity Using 3 Dimensional Surface Charge Method)

  • 김용준;민석원;김응식
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 E
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    • pp.2117-2119
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    • 1999
  • In this paper, the electric fields inside GIS with metal impurity is analysed by the use of 3 dimensional Surface Charge Method. We find the metal impurity makes electric field distribution inside GIS non-uniform and causes breakdown of $SF_6$ gas in GIS.

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최적화 모형의 고체 절연체 내부 공극 또는 금속 이물질 존재시의 GIS 내부 전계 분포 해석 (Analysis of Electric Fields Distribution Inside Optimal Model GIS with a Metal Impurity or a Void)

  • 민석원;송기현;김응식
    • 대한전기학회논문지:전력기술부문A
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    • 제51권11호
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    • pp.585-590
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    • 2002
  • In this paper, the 3 dimensional surface charge method is applied to calculate electric fields distribution inside a general and an optimal model of GIS with a metal impurity and a void respectively. We know the optimal model can reduce tangential electric fields at solid insulator surface to 70% of the general model and infulence fields distribution near a metal impurity. Meanwhile, we find the optimal model does not decrease field distribution inside a void in the insulator.

The Anisotropy of the London Penetration Depth and the Upper Critical Field in C-doped $MgB_2$ Single Crystals from Reversible Magnetization

  • Kang, Byeong-Won;Park, Min-Seok;Lee, Hyun-Sook;Lee, Sung-Ik
    • Progress in Superconductivity
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    • 제12권1호
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    • pp.36-40
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    • 2010
  • We have studied the anisotropy of the London penetration depth of carbon doped $MgB_2$ single crystals, which was obtained from reversible magnetization measurements with the magnetic field both parallel and perpendicular to the c-axis. Similar to the pure $MgB_2$, the anisotropy of the upper critical field ${\gamma}_H$ decrease with temperature while the anisotropy of the London penetration depth ${\gamma}_{\lambda}$ slowly increases with temperature. However, the temperature dependence of ${\gamma}_H$ is drastically reduced and the value of ${\gamma}_{\lambda}$ becomes nearly ~1 as C is introduced. These results indicate that C substitution increases impurity scattering mainly in the $\sigma$ bands. The temperature dependence of the anisotropies agree well with the theoretical predictions with impurity scattering.

On the Size of Quantum Dots with Bound Hydrogenic Impurity States

  • Sun, Ho-Sung
    • Bulletin of the Korean Chemical Society
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    • 제30권2호
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    • pp.315-318
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    • 2009
  • Some particular bound state energies of an electron, under Coulomb potential field, confined in a two-dimensional circle and a three-dimensional sphere are analytically derived. The derivation shows that the electron cannot be bound in a negative energy state when the circle (or sphere) is smaller than a certain critical size. The critical size dependency on the strength of Coulomb potential and the angular momentum of the electron is also analytically derived. This system mimics quantum dots. Therefore the derivation provides new information on a minimum critical size of quantum dots with hydrogenic impurity.

분무합성법으로 성장시킨 Indium Sulfide 박막의 Hall 효과 특성 (Properties Hall Effect of Indium sulfide Thin Film Prepared by Spray Pyrolysis Method)

  • 오금곤;김형곤;김병철;최영일;김남오
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제54권7호
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    • pp.304-307
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    • 2005
  • The $In_2S_3\;and\;In_2S_3:Co^{2+}$ thin films were grown by the spray Pyrolysis method. The thin films crystallized into tetragonal structures. The indirect energy band gap was 2.32ev for $In_2S_3\;and\;1.81eV\;for\;In_2S_3:Co^{2+}$ at 298K. The direct energy band gap was 2.67ev for $In_2S_3:Co^{2+}$ thin films. Impurity optical absorption peaks were observed for the $In_2S_3:Co^{2+}$ thin films. These impurity absorption peaks are assigned, based on the crystal field theory to the electron transitions between the energy levels of the $Co^{2+}$ ion sited in $T_{d}$ symmetry. The electrical conductivity($\sigma$), Hall mobility(${\mu}_H$), and carrier concentration (n) of the $In_2Se_3$ thin film were measured, and their temperature dependence was investigated.

근적외선 분광법을 이용한 고순도 SiCI4 중의 미량 불순물 SiHCI3의 분석 (Analysis of Trace Trichlorosilane in High Purity Silicon Tetrachloride by Near-IR Spectroscopy)

  • 박찬조;이석근
    • 분석과학
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    • 제15권1호
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    • pp.87-90
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    • 2002
  • The content of $SiHCl_3$ as a trace impurity in $SiCl_4$ was analyzed by Near IR spectrophotometer with optical fiber. The strong absorption bands of $5345{\sim}5116cm^{-1}$ and $4848{\sim}4349cm^{-1}$ were used for analysis of $SiHCl_3$, and the detection limit of impurity $SiCl_3$ was appeared to be 0.005 % in the spectrum. The quantitative analysis by Near IR spectrophotometry showed the analytical possibility of trace impurity in $SiCl_4$ without sample pre-treatment not only in the laboratory but also in the field.

산업용 로봇을 이용한 철강 부유물 인식 시스템 (Metal Impurity Recognize System using Industrial Robot)

  • 조승일;김종찬;반경진;김응곤
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2011년도 춘계학술대회
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    • pp.355-357
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    • 2011
  • 철강용융아연욕의 상부와 하부의 부유물들을 모으는 방법과 이들을 용융 환원에 의해 회수하는 방안에 관련된 여러 가지 연구 및 특허기술 자료로 발표되고 있으나, 이제까지 현장에 적용된 작업모델을 개발하지 못했다. 본 논문에서는 철강공정 인체유해 작업용 로봇이 영상에 기반한 부유물 인식을 위해 가장 효율적인 인식 알고리즘을 제안하였다.

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열처리 분위기에 따른 $MgB_2$ 초전도의 특성 변화 ($MgB_2$ Superconducting Properties under Different Annealing Condition)

  • 정국채;김영국
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.362-362
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    • 2009
  • $MgB_2$ bulk samples were sintered at different ambient. In this work, high purity Ar gas was added with oxygen and hydrogen gas, which can be regarded as impurity in a sense, as a possible dopant in the $MgB_2$. It was found that oxygen in the sintering ambient leads to a decrease in the critical current density $J_c$ at self field and lower fields. However, we can obtained higher $J_c$ at higher fields. It was also noted that $MgB_2$ samples sintered with 5% hydrogen in Ar revealed the increased $J_c$ at all fields compared to those processed in pure Ar ambient. From the XRD and FESEM analysis, the impurity gas in Ar can refine the $MgB_2$ grain size and result in increased grain. boundary, which can act as a strong flux pinning sites in $MgB_2$ samples. Also discussed are the effects of sintering ambient on irreversibility field, $H_{irr}$ and the upper critical field, $H_{C2}$.

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