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Properties Hall Effect of Indium sulfide Thin Film Prepared by Spray Pyrolysis Method  

Oh Gum-Kon (조선대학교 전기공학과)
Kim Hyung-Gon (조선이공대학 전기과)
Kim Byung-Cheol (조선이공대학 전기과)
Choi Young-Il (조선이공대학 메카트로닉스과)
Kim Nam-Oh (조선이공대학 전기과)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.54, no.7, 2005 , pp. 304-307 More about this Journal
Abstract
The $In_2S_3\;and\;In_2S_3:Co^{2+}$ thin films were grown by the spray Pyrolysis method. The thin films crystallized into tetragonal structures. The indirect energy band gap was 2.32ev for $In_2S_3\;and\;1.81eV\;for\;In_2S_3:Co^{2+}$ at 298K. The direct energy band gap was 2.67ev for $In_2S_3:Co^{2+}$ thin films. Impurity optical absorption peaks were observed for the $In_2S_3:Co^{2+}$ thin films. These impurity absorption peaks are assigned, based on the crystal field theory to the electron transitions between the energy levels of the $Co^{2+}$ ion sited in $T_{d}$ symmetry. The electrical conductivity($\sigma$), Hall mobility(${\mu}_H$), and carrier concentration (n) of the $In_2Se_3$ thin film were measured, and their temperature dependence was investigated.
Keywords
Impurity Optical Absorption; Crystal Field Theory; Electrical Conductivity; Hall Mobility; Energy Band Gap;
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