• Journal of the Korean Vacuum Society
• /
• v.19 no.1
• /
• pp.52-57
• /
• 2010

$BiFeO_3/Pb(Zr_{0.52}Ti_{0.48})O_3$(BFO/PZT) multilayer thin films have been prepared on a Pt/Ti/$SiO_2$/Si(100) substrate by chemical solution deposition. BFO single layer, BFO/PZT bilayer and multilayer thin films were studied for comparison. X-ray diffraction analysis showed that the crystal structure of all films was multi-orientated perovskite phase without amorphous and impurity phase. The leakage current density at 500 kV/cm was reduced by approximately four and five orders of magnitude by bilayer and multilayer structure films, compared with BFO single layer film. The low leakage current density leads to saturated P-E hysteresis loops of bilayer and multilayer films. In BFO/PZT multlayer film, saturated remanent polarization of $44.3{\mu}C/cm^2$ was obtained at room temperature at 1 kHz with the coercive field($2E_c$) of 681.4 kV/cm.

• Economic and Environmental Geology
• /
• v.49 no.5
• /
• pp.335-347
• /
• 2016

The mineralogical and geochemical characteristics of diverse carbonate rocks can be investigated by using VNIRSWIR(visible near infrared-short wavelength infrared) spectroscopic analysis as a rapid, nondestructive, and inexpensive tool. Comparing whole rock analysis to VNIR-SWIR spectroscopic analysis, the analytical method was investigated to estimate CaO contents, mud impurity, and whiteness of carbonate rocks involved in high-grade limestones in the field. We classify typical carbonate rocks in the upper Pungchon Formation in high-grade limestone mine area such as the Gangweon, Chungmu and Baegun mine in the Jeongseon area. The results show that powdered specimen has much higher reflectance than cutted specimen between the same sample. Whiteness is highly correlated with reflectance(0.99) for powdered specimen. The absorption of mineral mixtures shifts in position as a result of the mass ratio of calcite and dolomite in the Chungmu mine by changing to 75:25, 50:50, and 25:75. The absorption peak position in carbonate mixtures is highly correlated with CaO contents(0.98~0.99). Based on color system, the carbonate rocks are grouped into (milky) white, light grey, light brown, grey, and dark grey. The absorption peak position shifts from 2340 nm to 2320 nm as CaO contents decrease from 55.86 wt.% to 29.71 wt.%. We confirmed that absorption peak position shifts depending on the amount of Ca, which is bonded to $CO{_3}^{-2}$, Mg, and Fe contents replacing Ca. This result suggests that CaO contents in carbonate rocks can be considered to quantitative analysis in the field by spectroscopic analysis.

• Journal of Sensor Science and Technology
• /
• v.10 no.6
• /
• pp.328-337
• /
• 2001

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_2Se_4$ single crystal thin film, we observed free excition ($E_x$) existing only high quality crystal and neutral bound exiciton ($D^{\circ}$, X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.

• Journal of the Korean Vacuum Society
• /
• v.6 no.2
• /
• pp.129-135
• /
• 1997

Undoped and Co-doped $ZnIn_2Se_4$ single crystals crystallized in the tetragonal space group 142m, with lattice constants a=5.748 $\AA$ and c=11.475 $\AA$, and a=5.567 $\AA$ and c=11.401 $\AA$. The optical absorption measured near the fundamental band edge showed that the optical energy band structure of these compounds had an indirect band gap, the direct and the indirect energy gaps of these compounds decreased as temperature changed from 10 to 300 K. The temperature coefficients of the direct energy gaps were found to be $\alpha=3.71\times10^{-4}$eV/K and $\beta$=519 K for $\alpha=3.71\times10^{-4}$eV/K and $\beta$=421K for $ZnIn_2Se_4$: Co. The temperature coefficients of the indirect energy gaps were also found to be $\alpha=2.31\times10^{-4}$ eV/K and $\beta$=285 K for $ZnIn_2Se_4$, and $\alpha=3.71\times10^{-4}$eV/K and $\beta$=609 K for $ZnIn_2Se_4$:Co, respectively. Six impurity optical absorption peaks due to cobalt are observed in $ZnIn_2Se_4$:Co single crystal. These impurity optical absorption peaks can be attibuted to the electronic transitions between the split energy levels of$CO^{2+}$ ions located at Td symmetry site of $ZnIn_2Se_4$ host lattice. The 1st order spin-orbit coupling constant ($\lambda$), Racah parameter (B), and crystal field parameter (Dq) ARE GIVEN AS -$243\textrm{cm}^{-1}, 587\textrm{cm}^{-1}, \;and\;327\textrm{cm}^{-1}$, respectively.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.386-386
• /
• 2012

For white light emitting diode (LED) applications, it has been reported that Y3Al5O12:Ce3+ (YAG:Ce) in nano-sized phosphor performs better than it does in micro-sized particles. This is because nano-sized YAG:Ce can reduce internal light scattering when coated onto a blue LED surface. Recently, there have been many reports on the synthesis of nano-sized YAG particles using bottom-up method, such as co-precipitation method, sol-gel process, hydrothermal method, solvothermal method, and glycothermal method. However, there has been no report using top-down method. Top-down method has advantages than bottom-up method, such as large scale production and easy control of doping concentration and particle size. Therefore, in this study, nano-sized YAG:Ce phosphors were synthesized by a high energy beads milling process with varying beads size, milling time and milling steps. The beads milling process was performed by Laboratory Mill MINICER with ZrO2 beads. The phase identity and morphology of nano-sized YAG:Ce were characterized by X-ray powder diffraction (XRD) and field-emission scanning electron microscopy (FESEM), respectively. By controlling beads size, milling time and milling steps, we synthesized a size-tunable and uniform nano-sized YAG:Ce phosphors which average diameters were 100, 85 and 40 nm, respectively. After milling, there was no impurity and all of the peaks were in good agreement with YAG (JCPDS No. 33-0040). Luminescence and quantum efficiency (QE) of nano-sized YAG:Ce phosphors were measured by fluorescence spectrometer and QE measuring instrument, respectively. The synthesized YAG:Ce absorbed light efficiently in the visible region of 400-500 nm, and showed single broadband emission peaked at 550 nm with 50% of QE. As a result, by considering above results, high energy beads milling process could be a facile and reproducible synthesis method for nano-sized YAG:Ce phosphors.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.12 no.4
• /
• pp.202-209
• /
• 2002

The stochiometric mix of evaporating materials for the $CuInSe_2$single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CuInSe_2$compound crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$single crystal thin films measured from Hall effect by van der Pauw method. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_2$single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal field splitting $\Delta$Cr. From the photoluminescence measurement on $CuInSe_2$single crystal thin film, we observed free exciton ($E_x$) existing only high quality crystal and neutral bound exciton ($A^{\circ}$, X) having very strong peak intensity. Then, the full-width-at-half-maximum (FWHM) and binding energy of neutral donor bound exciton were 7 meV and 5.9 meV, respectivity. By haynes rule, an activation energy of impurity was 59 meV.

• Korean Chemical Engineering Research
• /
• v.43 no.4
• /
• pp.495-502
• /
• 2005

Copper was plated on the tungsten substrate by use of a direct copper electroless plating. The optimum deposition conditions were found to be with a concentration of $CuSO_4$ 7.615 g/L, EDTA of 10.258 g/L, and glyoxylic acid of 7 g/L, respectively. The solution temperature was maintained at $60^{\circ}C$. The pH was varied from 11.0 to 12.8. After the deposition, the properties of the copper film were investigated with X-ray diffractometer (XRD), Field emission secondary electron microscope (FESEM), Atomic force microscope (AFM), X-ray photoelectron spectroscope (XPS), and Rutherford backscattering spectroscope (RBS). The best deposition condition was founded to be the solution pH of 11.8. In the case of 10 min deposition at the pH of 11.8, the grain shape was spherical, Cu phase was pure without impurity peak ($Cu_2O$ peak), and the surface root mean square roughness was about 11 nm. The thickness of the film turned out to be 140 nm after deposition for 12 min and the deposition rate was found to be about 12 nm/min. Increase in pH induced a formation of $Cu_2O$ phase with a long rectangular grain shape. The pH control seems to play an important role for the orientation of Cu in electroless deposition. The deposited copper concentration was 99 atomic percent according to RBS. The resulting Cu/W film yielded a good adhesive strength, because Cu/W alloy forms during electroless deposition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.175-178
• /
• 2004

The stochiometric mixture of evaporating materials for the $ZnIn_2S_4$ single crystal thin film was prepared from horizontal furnace. To obtain the $ZnIn_2S_4$ single crystal thin film, $ZnIn_2S_4$ mixed crystal was deposited on throughly etched semi-insulating GaAs(100) in the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively and the growth rate of the $ZnIn_2S_4$ sing1e crystal thin film was about $0.5\;{\mu}m/hr$. The crystalline structure of $ZnIn_2S_4$ single crystal thin film was investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of $ZnIn_2S_4$ single crystal thin film measured from Hall effect by van der Pauw method are $8.51{\times}10^{17}\;cm^{-3}$, $291\;cm^2/V{\cdot}s$ at $293_{\circ}\;K$, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $ZnIn_2S_4$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}S_O$ and the crystal field splitting ${\Delta}Cr$ were 0.0148 eV and 0.1678 eV at $10_{\circ}\; K$, respectively. From the photoluminescence measurement of $ZnIn_2S_4$ single crystal thin film, we observed free excition $(E_X)$ typically observed only in high quality crystal and neutral donor bound exciton $(D^{o},X)$ having very strong peak intensity The full width at half maximum and binding energy of neutral donor bound excition were 9 meV and 26 meV, respectively, The activation energy of impurity measured by Haynes rule was 130 meV.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.32 no.4
• /
• pp.121-127
• /
• 2022

β-Gallium oxide (Ga₂O₃), an ultra-wide bandgap semiconductor, has attracted great attention due to its promising applications for high voltage power devices. The most stable phase among five different polytypes, β-Ga₂O₃ has the wider bandgap of 4.9 eV and higher breakdown electric field of 8 MV/cm. Furthermore, it can be grown from melt source, implying higher growth rate and lower fabrication cost than other wide bandgap semiconductors such as SiC, GaN and diamond for the power device applications. In this study, β-Ga₂O₃ bulk crystals were grown by the edge-defined film-fed growth (EFG) process. The growth direction and the principal surface were set to be the [010] direction and the (100) plane of the β-Ga₂O₃ crystal, respectively. The spectra measured by Raman an alysis could exhibit the crystal phase an d impurity dopin g in the β-Ga₂O₃ ingot, and the crystallinity quality and crystal direction were analyzed using high-resolution X-ray diffraction (HRXRD). The crystal quality and various properties of as-grown β-Ga₂O₃ ribbon was systematically analyzed in order to investigate the spatial variation in entire crystal grown by EFG method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.37 no.4
• /
• pp.457-463
• /
• 2024

(Bi_1/2Na_1/2)TiO₃(BNT) piezoelectric ceramics are one of the promising materials that can replace Pb(Zr, Ti)O₃(PZT) piezoelectric ceramics due to the high electromechanical strain properties. However, it is still difficult to use practical applications because the required electric field for inducing electromechanical strain is relatively higher than that of PZT ceramics. To overcome this problem, it has been intensively studied on doping impurity or modifying other ABO₃ for BNT-based piezoelectric ceramics. Therefore, this study investigated the effects of La₂O₃ doping on the phase transition behavior and electromechanical strain properties in BNT-SrTiO₃ (BNT-ST) lead-free piezoelectric ceramics. In the case of the temperature-dependent dielectric properties, it was confirmed that a phase transition from ferroelectrics to relaxors is induced with increasing La₂O₃ content. As a result, the electromechanical strain properties of BNT-ST ceramics were improved. The highest S_max/E_max value corresponding to 300 pm/V was obtained at 2 mol% La₂O₃-dopped BNT-ST ceramics. Accordingly, this study successfully demonstrated that La₂O₃ doping is effective on the inducing phase transition from ferroelectrics to relaxors and the improving electromechanical strain properties of BNT-ST lead-free piezoelectric ceramics.