• Nuclear Engineering and Technology
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• v.30 no.1
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• pp.17-25
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• 1998

Transport of carbon and boron impurity ions parallel to magnetic field lines in the tokamak SOL (scrape-off layer) is numerically investigated for a one-dimensional steady state. The spatial distributions of density and velocity of the impurity ions in a steady state are calculated by finite difference method for a single-fluid model. The calculated results show that among forces acting on SOL particles thermal force produced tv plasma temperature gradient is a principal force determining the feature of impurity distribution profiles in the tokamak edge. However, strong collisional friction forces appearing dominant in front of the diverter plate restrain impurity ion flows due to temperature gradients from moving toward the midplane. Consequently, the stagnation point develops in the impurity flow by these two forces near the diverter region, in which ion flows change their directions. Impurity ions turn out to be accumulated at the stagnation points, where peaked profiles of highly-ionized state ions are relatively predominant over those of low-ionized state ions.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.6
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• pp.346-353
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• 2000

In this paper, we developed 3 dimensional Surface Charge Method which could calculate electric fields inside GIS with a small void in solid insulator or with a metal impurity. We find a metal impurity makes much more non-uniform electric field distribution inside GIS than a small void. We also find electric field is much more increased when a metal impurity is close to solid insulator surface at high voltage conductor.

• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2117-2119
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• 1999

In this paper, the electric fields inside GIS with metal impurity is analysed by the use of 3 dimensional Surface Charge Method. We find the metal impurity makes electric field distribution inside GIS non-uniform and causes breakdown of $SF_6$ gas in GIS.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.51 no.11
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• pp.585-590
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• 2002

In this paper, the 3 dimensional surface charge method is applied to calculate electric fields distribution inside a general and an optimal model of GIS with a metal impurity and a void respectively. We know the optimal model can reduce tangential electric fields at solid insulator surface to 70% of the general model and infulence fields distribution near a metal impurity. Meanwhile, we find the optimal model does not decrease field distribution inside a void in the insulator.

• Progress in Superconductivity
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• v.12 no.1
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• pp.36-40
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• 2010

We have studied the anisotropy of the London penetration depth of carbon doped $MgB_2$ single crystals, which was obtained from reversible magnetization measurements with the magnetic field both parallel and perpendicular to the c-axis. Similar to the pure $MgB_2$, the anisotropy of the upper critical field ${\gamma}_H$ decrease with temperature while the anisotropy of the London penetration depth ${\gamma}_{\lambda}$ slowly increases with temperature. However, the temperature dependence of ${\gamma}_H$ is drastically reduced and the value of ${\gamma}_{\lambda}$ becomes nearly ~1 as C is introduced. These results indicate that C substitution increases impurity scattering mainly in the $\sigma$ bands. The temperature dependence of the anisotropies agree well with the theoretical predictions with impurity scattering.

• Bulletin of the Korean Chemical Society
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• v.30 no.2
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• pp.315-318
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• 2009

Some particular bound state energies of an electron, under Coulomb potential field, confined in a two-dimensional circle and a three-dimensional sphere are analytically derived. The derivation shows that the electron cannot be bound in a negative energy state when the circle (or sphere) is smaller than a certain critical size. The critical size dependency on the strength of Coulomb potential and the angular momentum of the electron is also analytically derived. This system mimics quantum dots. Therefore the derivation provides new information on a minimum critical size of quantum dots with hydrogenic impurity.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.7
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• pp.304-307
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• 2005

The $In_2S_3\;and\;In_2S_3:Co^{2+}$ thin films were grown by the spray Pyrolysis method. The thin films crystallized into tetragonal structures. The indirect energy band gap was 2.32ev for $In_2S_3\;and\;1.81eV\;for\;In_2S_3:Co^{2+}$ at 298K. The direct energy band gap was 2.67ev for $In_2S_3:Co^{2+}$ thin films. Impurity optical absorption peaks were observed for the $In_2S_3:Co^{2+}$ thin films. These impurity absorption peaks are assigned, based on the crystal field theory to the electron transitions between the energy levels of the $Co^{2+}$ ion sited in $T_{d}$ symmetry. The electrical conductivity($\sigma$), Hall mobility(${\mu}_H$), and carrier concentration (n) of the $In_2Se_3$ thin film were measured, and their temperature dependence was investigated.

• Analytical Science and Technology
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• v.15 no.1
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• pp.87-90
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• 2002

The content of $SiHCl_3$ as a trace impurity in $SiCl_4$ was analyzed by Near IR spectrophotometer with optical fiber. The strong absorption bands of $5345{\sim}5116cm^{-1}$ and $4848{\sim}4349cm^{-1}$ were used for analysis of $SiHCl_3$, and the detection limit of impurity $SiCl_3$ was appeared to be 0.005 ％ in the spectrum. The quantitative analysis by Near IR spectrophotometry showed the analytical possibility of trace impurity in $SiCl_4$ without sample pre-treatment not only in the laboratory but also in the field.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.355-357
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• 2011

Several researches and patents has been published on gathering impurity from both upper and lower places of melting zinc bath and collecting them using melting resolution, but they have never discovered work model applied in the field. This paper proposes an effective extraction algorithm for hazardous work robot that is designed to detect impurity in steel manufacturing process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.362-362
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• 2009

$MgB_2$ bulk samples were sintered at different ambient. In this work, high purity Ar gas was added with oxygen and hydrogen gas, which can be regarded as impurity in a sense, as a possible dopant in the $MgB_2$. It was found that oxygen in the sintering ambient leads to a decrease in the critical current density $J_c$ at self field and lower fields. However, we can obtained higher $J_c$ at higher fields. It was also noted that $MgB_2$ samples sintered with 5% hydrogen in Ar revealed the increased $J_c$ at all fields compared to those processed in pure Ar ambient. From the XRD and FESEM analysis, the impurity gas in Ar can refine the $MgB_2$ grain size and result in increased grain. boundary, which can act as a strong flux pinning sites in $MgB_2$ samples. Also discussed are the effects of sintering ambient on irreversibility field, $H_{irr}$ and the upper critical field, $H_{C2}$.