• Korean Journal of Metals and Materials
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• v.48 no.2
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• pp.180-186
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• 2010

For the application of field emission display (FED), it is essential to develop a carbon nanotube (CNT) cathode with high emission current density. In this study, we developed and demonstrated a post-heat treatment (PHT) process to improve field emission properties of CNT cathodes. Since the PHT is intended to burn out organic materials covering the CNTs, the PHT was carried out by heating samples at a high temperature in an atmosphere. The PHT process is applied for samples processed by surface treatment with an adhesive tape. Compared to samples prior to the PHT, samples after the PHT at $360^{\circ}C$ showed about 17% improvement in emission current density. The major reason for the increased current density is mainly the increased aspect ratio of the CNTs because of the removal of the adhesive organic residues covering the CNTs, which were attached on the CNT surfaces during the surface treatment using the adhesive taping method.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.417-424
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• 1999

In order to investigate field emission mechanism of undoped polycrystalline diamond films, diamond films with different structural properties were deposited by varying positive substrate bias and/or $CH_4$ concentration. When increasing $CH_4$ concentration and positive substrate bias voltage, nondiamond carbon content in diamond films increased. Increase of nondiamond carbon content with increasing substrate voltage is ascribed to increase of substrate and excess generation of $CH_n$ radicals. Field emission properties of undoped polycrystalline diamond films ere significantly enhanced with increasing nondiamond carbon content. For diamond films with a small amount of nondiamond carbon, electrons are emitted through diamond surface while for the films with a large amount of nondiamond carbon, electron emission occurs through diamond bulk as well as surface. From this study, depending on nondiamond carbon content two field emission mechanisms were suggested.

• Korean Journal of Materials Research
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• v.13 no.10
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• pp.663-667
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• 2003

The effects of paste materials on field emission properties in a carbon nanotube(CNT) cathode were investigated for high-efficient field emission displays. The major components in CNT paste for screen printing were a metallic Ag-paste, a dielectric glass-frit and CNT ink. The emission current from the cathode by an electron tunneling effect increased with an increase in the dielectric material fraction in the CNT paste, which is related to an increase of field enhancement factor in Fowler-Nordheim equation. The surface treatment used, after soft baking of the screen-printed CNT films, greatly affected the decrease in the turn-on field in CNT cathode and the uniformity of emission sites over the entire CNT film area.

• Applied Microscopy
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• v.46 no.4
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• pp.227-237
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• 2016

This investigation deals with the process of field electron emission from composite microemitters. Tested emitters consisted of a tungsten or carbon-fiber core, coated with a dielectric material. Two coating materials were used: (1) Clark Electromedical Instruments Epoxylite resin and (2) Epidian 6 Epoxy resin (based on bisphenol A). Various properties of these emitters were measured, including the current-voltage characteristics, which are presented as Fowler-Nordheim plots, and the corresponding electron emission images. A field electron microscope with a tip (cathode) to screen (anode) distance of 10 mm was used to electrically characterize the emitters. Measurements were carried out under ultra-high vacuum conditions with a base pressure of $10^{-6}$ Pascal ($10^{-8}$ mbar).

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.131-132
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• 2000

We prepared Si emitters coated with a MOCVD $CoSi_2$ layer to improve the emission properties. The $CoSi_2$ layer was grown on Si field emitters in situ by reactive chemical-vapor deposition of cyclopentadienyl dicarbonyl cobalt at 600 ${\sim}$ $650^{\circ}C$. The $CoSi_2$ coated field emitters showed enhanced emission properties of current-voltage characteristics, which were due to the increase of emitting area from Fowler-Nordheim plot. And the emission current fluctuation decreased due to the chemically stable surface properties of $CoSi_2$.

• Journal of the Semiconductor & Display Technology
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• v.9 no.4
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• pp.7-12
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• 2010

Field-emission characteristics of carbon nanotubes(CNTs), which were grown on conical-type tungsten micro-tips by using an electrophoretic deposition(EPD) method, were examined. The EPD method proved to be convenient to manipulate and arrange CNTs from well dispersed suspensions onto such tip-type substrates. The growth rate of CNTs was proportional to the applied d.c. bias voltage and the process time. It was observed from the Raman study that the EPDproduced CNTs showed better crystal qualities with the Raman intensity ratio( $I_D$/$I_G$) of 0.41-0.42 than the CVD-produced CNTs and their crystal qualities could be further improved by thermal annealing. The electron emitters based on the EPDCNTs showed excellent field emission properties, such as the threshold voltage for electron emission of about 620 V and the maximum emission current of about 345 ${\mu}A$. In addition, the EPD-CNTs exhibited the stable long-term(up to 40 h) emission capability and the emission stability was enhanced by thermal annealing.

• Journal of Magnetics
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• v.17 no.1
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• pp.9-12
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• 2012

Attempts to dope carbon nanotube (CNT) with impurities in order to control the electronic properties of the CNT is a natural course of action. Boron is known to improve both the structural and electronic properties. In this report, we study the field emission properties of Boron-doped double-walled CNT (DWCNT). Boron-doped DWCNT films were fabricated by catalytic decomposition of tetrahydrofuran and triisopropyl borate over a Fe-Mo/MgO catalyst at $900^{\circ}C$. We measured the field emission current by varying the doping amount of Boron from 0.8 to 1.8 wt%. As the amount of doped boron in the DWCNT increases, the turn-on-field of the DWCNT decreases drastically from 6 V/${\mu}m$ to 2 V/${\mu}m$. The current density of undoped CNT is 0.6 mA/$cm^2$ at 9 V, but a doped-DWCNT sample with 1.8 wt% achieved the same current density only at only 3.8 V. This shows that boron doped DWCNTs are potentially useful in low voltage operative field emitting device such as large area flat panel displays.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.1
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• pp.59-63
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• 2000

For the Mo-tip field emitter array, the method by which the geometrical structure of the gate insulator wall could be modified in order to improve field emission properties(turn-on voltage and gate leakage current). The device having a gate insulator of complex shape, which means the combined geometrical structure with round shape made by wet etching and vertical shape made by dry etching processes, was fabricated and the field emission properties of the three kinds of devices were compared. As a result, the electric field applied to tip apex could be increased and gate leakage current could be decreased by employing the gate insulator having geometrical wall structure of mixed shape. Finally, the obtained empirical results were analyzed by simulation of electric field distribution at/near the tip apex and gate insulator using SNU-FEAT simulator.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.185-188
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• 2004

A diode structure of field emission lamps based upon carbon-nanotube is studied. The single-walled carbon nanotubes(SWNTs) were produced by arc discharge method. We made the 1-inch diode type flat lamp using CNTs. We applied anode voltage gradually to refine the field emission behavior of emitter in dynamic vacuum system to study the emission current. the brightness and efficiency, etc. The field emission properties was estimated by varying gaps between the cathode and anode, contents of the glass frit. The good luminous efficiency is showed in the gap $900{\mu}m$, $1200{\mu}m$ and contents of the proper glass frit. For the upper conditions, the luminous efficiencies were respectively 23.30, 11.12 1m/W.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.60-63
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• 2004

Recently, carbon nanotubes(CNTs) have been demonstrated to possess remarkable mechanical and electronic properties, in particular, for field emission applications. Its high aspect ratio and extremely small diameter, hollowness, together with high mechanical strength and high chemical stability, are advantages for use in field emitter. In this paper, we demonstrate electrical discharge properties from carbon nanotube cathode electrodes to use as an emitter electrode of vacuum gauges. Vertically aligned $2{\times}2mm^2$ CNT arrays on the silicon substrate were synthesized by the thermal CVD method on Fe catalytic metal, and a glass patterning by the sand blast method and the silicon/glass anodic bonding processes were applied to make samples with 2 electrodes. The field emission was examined under the vacuum range of $10^{-3}$ Torr.