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Effect of Post-Heat Treatment on Field Emission Properties for Carbon Nanotube Cathodes

탄소나노튜브 캐소드의 전계방출 특성에 미치는 재열처리의 영향

  • Ha, Sang-Hoon (School of Materials Science and Engineering, Pusan National University) ;
  • Kwon, Na-Hyun (School of Materials Science and Engineering, Pusan National University) ;
  • Song, Pung-Keun (School of Materials Science and Engineering, Pusan National University) ;
  • Chang, Jiho (Major of Semiconductor Physics, Korea Maritime University) ;
  • Cho, Young-Rae (School of Materials Science and Engineering, Pusan National University)
  • 하상훈 (부산대학교 재료공학부) ;
  • 권나현 (부산대학교 재료공학부) ;
  • 송풍근 (부산대학교 재료공학부) ;
  • 장지호 (한국해양대학교 나노반도체 전공) ;
  • 조영래 (부산대학교 재료공학부)
  • Received : 2009.08.10
  • Published : 2010.02.20

Abstract

For the application of field emission display (FED), it is essential to develop a carbon nanotube (CNT) cathode with high emission current density. In this study, we developed and demonstrated a post-heat treatment (PHT) process to improve field emission properties of CNT cathodes. Since the PHT is intended to burn out organic materials covering the CNTs, the PHT was carried out by heating samples at a high temperature in an atmosphere. The PHT process is applied for samples processed by surface treatment with an adhesive tape. Compared to samples prior to the PHT, samples after the PHT at $360^{\circ}C$ showed about 17% improvement in emission current density. The major reason for the increased current density is mainly the increased aspect ratio of the CNTs because of the removal of the adhesive organic residues covering the CNTs, which were attached on the CNT surfaces during the surface treatment using the adhesive taping method.

Keywords

References

  1. J. M. Kim, W. B. Choi, N. S. Lee, and J. E. Jung, Diamond Relat. Mater. 9, 1184 (2000) https://doi.org/10.1016/S0925-9635(99)00266-6
  2. Q. H. Wang, A. A. Setlur, J. M. Lauerhaas, J. Y. Dai, E. W. Seelig, and R. P. H. Chang, Appl. Phys. Lett. 72, 2912 (1998) https://doi.org/10.1063/1.121493
  3. Y. R. Cho, C. S. Hwang, Y. H. Song, S. D. Ahn, C. H. Chung, J. H. Lee, and K. I. Cho, Jpn. J. Appl. Phys. 41, 5745 (2002) https://doi.org/10.1143/JJAP.41.5745
  4. S. Iijima, Nature 354, 56 (1991) https://doi.org/10.1038/354056a0
  5. Y. J. An, W. S. Chung, J. H. Chang, H. C. Lee, and Y. R. Cho, Mater. Lett. 62, 4277 (2008) https://doi.org/10.1016/j.matlet.2008.06.058
  6. S. W. Kim, W. S. Chung, K. S. Sohn, C. Y. Son, and S. Lee, J. Kor. Inst. Met. & Mater. 47, 50 (2009)
  7. T. S. Kim, Y. J. An, K. H. Kim, W. S. Chung, and Y. R. Cho, Met. Mater. Int. 12, (2006)
  8. Y. R. Cho, J. H. Lee, Y. H. Song, S. Y. Kang, C. S. Hwang, M. Y. Jung, D. H. Kim, S. K. Lee, H. S. Uhm, and K. I. Cho, Mat. Sci. Eng. B 79, 128 (2001) https://doi.org/10.1016/S0921-5107(00)00565-1
  9. C. J. Yang, J. I. Park, and Y. R. Cho, Adv. Eng. Mater. 9, 88 (2007) https://doi.org/10.1002/adem.200600003
  10. W. J. Zhao, A. Sawada, and M. Takai, Jpn. J. Appl. Phys. 41, 4314 (2002) https://doi.org/10.1143/JJAP.41.4314
  11. D. H. Kim, C. D. Kim, and H. R. Lee, Carbon 42, 1807 (2004) https://doi.org/10.1016/j.carbon.2004.03.015
  12. T. J. Vink, M. Gillies, J. C. Kriege, and H. W. J. J. Laar, Appl. Phys. Lett. 83, 3552 (2003) https://doi.org/10.1063/1.1622789
  13. Y. C. Kim, K. H. Sohn, Y. M. Cho, and E. H. Yoo, Appl. Phys. Lett. 84, 5350 (2004) https://doi.org/10.1063/1.1766403
  14. M. S. F. Rocha, T. E. A. Santos, A. C. Paulo, V. R. Hering, D. Engelsen, J. H. Vuolo, S. S. Mammana, and V. P. Mammana, Appl. Surface. Sci. 254, 1859 (2008) https://doi.org/10.1016/j.apsusc.2007.07.172
  15. R. H. Fower and L. W. Nordheim, Proc. R. Soc. London, A 119, 173 (1928) https://doi.org/10.1098/rspa.1928.0091
  16. A. S. Berdinsky, A. V. Shaporin, J. B. Yoo, J. H. Park, P. S. Alegaonkar, J. H. Han, and G. H. Son, Appl. Phys. A. 83, 377 (2006) https://doi.org/10.1007/s00339-006-3482-7
  17. Y. C. Choi and N. S. Lee, Diamond Relat. Mater. 17, 270 (2008) https://doi.org/10.1016/j.diamond.2007.12.038
  18. M. Hirakawa, S. Sonada, C. Tanaka, H. Murakami, and H. Yamakawa, Appl. Surface. Sci. 169, 662 (2001) https://doi.org/10.1016/S0169-4332(00)00808-4
  19. H. Y. Shin, W. S. Chung, D. H. Kim, B. C. Shin, and Y. R. Cho, J. Vac. Sci. Technol. B 23, 2369 (2005) https://doi.org/10.1116/1.2110342