• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.69-70
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• 2007

FTS(Facing Target Sputtering) 장치를 이용하여 polyethylene terephthalate (PET) 필름 위에 ITO(Indium Tin Oxide) 박막을 성장시키고 이들의 광학적, 구조적 특성을 조사하였다. 막 두께는 150 nm로 고정하였고, 인가적력과 산소 가스 유량비를 변수로 박막을 합성 하였다. 그 결과 80 % 이상의 광투과율과 Rms 26.8 nm 값을 갖는 ITO / PET 박막을 합성하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.145-146
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• 2012

Al이 2wt% 첨가된 AZO(Al-doped ZnO) 타겟을 기판을 가열한 대향 타겟 마그네트론 스퍼터링법을 이용하여 수소 유량에 따라 유리기판 위에 AZO 박막을 증착하였다. 수소 유량에 따른 AZO 박막내의 carrier concentration와 mobility의 변화를 확인하였으며 박막내 crystallinity와 grain size의 변화를 확인하였다. 증착된 AZO 박막 특성의 구조적, 전기적, 광학적 변화조사하고 비저항 및 광투과도 등을 분석하여 투명전극용으로 적합한지 연구하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.586-589
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• 2004

In this study, AZO(ZnO:Al) thin film were prepared by FTS(Facing Target Sputtering) system. The electrical, optical properties and crystalline of AZO thin film with thickness have been investigated. The thickness, transmittance, crystalline and electrical properties of AZO thin film were measured by a-step, UV-VIS spectrometer, hall effect measurement system, XRD and four-point probe, respectively. As a result, AZO thin film deposited with the transmittance over 80% and the resistivity about $10^{-4}\;\Omega-cm$.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.93-96
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• 2005

In this study, AZO(ZnO:Al) thin film were Prepared by FTS(Facing Target Sputtering) system. The electrical, optical properties and crystalline of AZO thin film with thickness have been investigated. The thickness, transmittance, crystalline and electrical Properties of AZO thin film were measured by $\alpha$-step, UV-VIS spectrometer, hall effect measurement system, XRD and four-point probe, respectively. As a result, AZO thin film deposited with the transmittance over $80\%$ and the resistivity about $10^{-4}{\Omega}-cm$.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.572-572
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• 2013

본 연구에서는 Plasma damage-free 선형 대향 타겟 스퍼터(Linear Facing Target sputtering: LFTS) 시스템을 이용하여 성막시킨 GaN-LED의 투명전극용 Ga-doped ZnO (GZO) 박막의 특성을 연구하였다. LFTS 시스템을 이용한 GZO 성막 공정 중 LED소자의 플라즈마 노출에 의한 데미지를 최소화 하기 위해 일정한 타겟간 거리(Target-to-Target distance: 65 mm)에서 타겟과 기판간 거리(Target-to-Substrate distance)를 50 mm에서 120 mm로 변화시키며 GZO 투명 전극을 성막해 박막의 특성과 소자의 특성을 동시에 분석하였다. LFTS에서 플라즈마는 GZO 타겟 사이에 형성된 일방향의 자장에 의해 효과적으로 구속되기 때문에 기판과 타겟 거리를 최적화 할 경우 플라즈마 데미지를 최소화하며 GaN-LED의 제작이 가능하다. 기판과 타겟 사이의 거리가 120 mm에서 최적화된 200 nm 두께의 GZO 투명 전극은 DC 파워 250 W, 공정 압력 0.3 mTorr, Ar 20 sccm 실험 조건하에서 LED 소자 위해 성막되었으며, 이후 $600^{\circ}C$ 수소 분위기에서 1분간 급속 열처리하였고 면저항(37 Ohm/sq.)과 450 nm 파장에서의 투과도(83%)를 나타냄을 확인할 수 있었다. LED 소자와 타겟 사이의 거리가 50 mm에서 120 mm로 증가할수록 성막공정 중 LED 소자에 미치는 플라즈마 데미지의 감소로 인해 GaN-LED 소자의 turn on voltage가 8.2 V에서 3.4 V로 감소한 것을 확인하였으며, 또한 radiant intensity는 20 mA의 전류를 인가하였을 시 0.02 mW/sr에서 8 mW/sr로 400배 향상되었다. 이러한 소자 특성은 대향 타겟 스퍼터 시스템으로 성장시킨 GZO 투명전극이 LED 소자의 투명 전극 층(Transparent Conductive Layer: TCL)에 적용될 수 있음을 말해준다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.2
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• pp.114-120
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• 2012

In this research, we prepared Ga doped zinc oxide(ZnO:Ga, GZO) targets each difference sintering temperature $700^{\circ}C$, $800^{\circ}C$, and doping rate 1 wt.%, 2 wt.%, 3 wt.%. The characteristics of thin film on glass substrates which deposited by facing target sputtering in pure Ar atmosphere are reported. Ga doped zinc oxide film is attracted material through low resistivity, high transmittance, etc. When prepared target powder's structure was investigated by scanning electron microscope, densification and coarsening by driving force was observed. For each ZnO:Ga films with a $Ga_2O_3$ content of 3 wt.% at input power of 45W, the lowest resistivity of $9.967{\times}10^{-4}{\Omega}{\cdot}cm$ ($700^{\circ}C$) and $9.846{\times}10^{-4}{\Omega}{\cdot}cm$ ($800^{\circ}C$) was obtained. the carrier concentration and mobility were $4.09{\times}10^{20}cm^{-3}$($700^{\circ}C$), $4.12{\times}10^{20}cm^{-3}$($800^{\circ}C$) and $15.31cm^2/V{\cdot}s(700^{\circ}C)$, $12.51cm^2/V{\cdot}s(800^{\circ}C)$, respectively. And except 1 wt.% Ga doped ZnO thin film, average transmittance of these samples in the range 350-800 nm was over 80%.

• Korean Journal of Materials Research
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• v.27 no.3
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• pp.161-165
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• 2017

In this paper, synthesis of terephthalate intercalated Zn-Al: Layered double hydroxides (LDHs) was studied. We designed freestanding Zn-Al: carbonate LDH nanosheets for a facile exchange technique. The as-prepared Zn-Al carbonate LDHs were converted to terephthalate intercalated Zn-Al:LDHs by ion exchange method. Initially, Al-doped ZnO (AZO) thin films were deposited on p-Si (001) by facing target sputtering. For synthesis of free standing carbonate Zn-Al:LDH, we dipped the AZO thin film in naturally carbonated water for 3 hours. Further, Zn-Al: carbonate LDH nanosheets were immersed in terepthalic acid (TA) solution. The ion exchange phenomena in the terephthalate assisted Zn-Al:LDH were confirmed using FT-IR analysis. The crystal structure of terephthalate intercalated Zn-Al:LDH was investigated by XRD pattern analysis with different mole concentrations of TA solution and reaction times. The optimal conditions for intercalation of terephthalate from carbonated Zn-Al LDH were established using 0.3 M aqueous solution of TA for 24 hours.

• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1761-1763
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• 1998

ITO(Iridium-Tin Oxide) thin film, as discharge electrodes in AC PDP, should have low resistivity and high transparency. Regarded as a high deposition rate method, the ITO thin film fabricated by the facing target sputtering system has been studied in this paper. The electrical property of the ITO film deposited below $150^{\circ}C$ is not satisfied. The SEM pictures show that the ITO films deposited below $150^{\circ}C$ are amorphous. After being annealed the amorphous ITO films become crystalline, and for this reason, the electrical property of amorphous ITO films can be effectively improved by annealing process. An ITO film with the resistivity as low as $1.99{\times}10^{-4}$ and transparency above 85% has be gotten after vacuum annealing at $300^{\circ}C$ for 2 hours while deposited at $75^{\circ}C$. The corresponding deposition rate is $220{\AA}/min$.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1589-1592
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• 1994

We developed the ion plating system, consisted of the Facing Target Magnetron Sputtering System and the r.f, electrode of the coil type, which was available to control the reactive and the adhesion between thin film and substrate, and studied about the discharge characteristics and the optimum condition in order to form the high quality thin film. The characteristics of discharge and plasma was measured as Double Probe and Electrostatic Retarding Grid Analyzer. The incident ion energy on the substrate was increased as the increasing r.f power, bias voltage. By the r.f electrode, the ionization rate of the sputtered particles was about 75%, and the mean incident ion energy depend on the value which was difference between the plasma potential and biased substrate potential.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.471-472
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• 2008

The properties of Al doped ZnO (AZO) thin flim for solar cells with various input currents were studied in this paper. Using facing target sputtering with 2wt.% AZO targets, TCO films were deposited on glass(corning 2948) substrate at room temperature. AZO thin films were deposited by 0.2A, 0.4A, 0.6A and 0.8A at the thickness of 300nm. Electrical, optical and structural of thin films investigated by a Hall effect measurement (Ecopia), an UV-VIS spectrometer(HP) and a X-ray diffractometer (Rigaku). As a results, all thin films showed transmittance about 80%, respectively and resistivity was $7.67\times10^{-4}\Omega$-cm at 0.6A.